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    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
    2.
    发明授权
    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
    星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管

    公开(公告)号：US08058457B2

    公开(公告)日：2011-11-15

    申请号：US12656831

    申请日：2010-02-17

    申请人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    发明人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    IPC分类号： C07D409/14 ,  C07D417/14 ,  C07D413/14 ,  H01L51/00

    CPC分类号： H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

    摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

    摘要翻译： 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
    3.
    发明授权
    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
    星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管

    公开(公告)号：US07692029B2

    公开(公告)日：2010-04-06

    申请号：US11116326

    申请日：2005-04-28

    申请人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    发明人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    IPC分类号： C07D409/14 ,  C07D417/14 ,  C07D413/14 ,  H01L51/00

    CPC分类号： H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

    摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

    摘要翻译： 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

    Method of aligning ferroelectric liquid crystal and method of manufacturing liquid crystal display using the aligning method
    5.
    发明申请
    Method of aligning ferroelectric liquid crystal and method of manufacturing liquid crystal display using the aligning method 审中-公开
    使用对准方法对铁电液晶的方法和制造液晶显示器的方法

    公开(公告)号：US20050179843A1

    公开(公告)日：2005-08-18

    申请号：US11025070

    申请日：2004-12-30

    申请人： Joo-young Kim ,  Yu-jin Kim ,  Soon-young Hyun ,  Chang-ju Kim ,  Jong-min Wang

    发明人： Joo-young Kim ,  Yu-jin Kim ,  Soon-young Hyun ,  Chang-ju Kim ,  Jong-min Wang

    IPC分类号： G02F1/141 ,  G02F1/1337 ,  G02F1/1341

    CPC分类号： G02F1/133788 ,  G02F1/141

    摘要： A method of aligning an FLC using an ultraviolet irradiation is provided. In the method, the FLC includes a plurality of liquid crystal molecules each having a first group, and second through fourth groups arranged in a regular tetrahedron together with an axis of the first group centering on a chiral center, the method comprising: forming a photo-alignment layer on a substrate; and irradiating a polarized ultraviolet onto the photo-alignment layer formed on the substrate with an inclination angle, wherein an incident plane of the irradiated ultraviolet and the first group are not on the same plane but are perpendicular to each other, thereby bestowing a selectivity to one axis of the second through fourth groups. By aligning the CDR-FLC according to the present invention, and employing the aligned CDR-FLC in an LCD, the picture contrast ratio and the picture uniformity are enhanced.

    摘要翻译： 提供了使用紫外线照射对准FLC的方法。 在该方法中，FLC包括各自具有第一组的多个液晶分子，以及以手性中心为中心以第一组的轴与第四组排列成规则四面体的方法包括：形成照片 对准层; 并且以倾斜角将偏振紫外线照射到形成在基板上的光取向层上，其中，照射的紫外线和第一组的入射面不在同一平面上但彼此垂直，从而赋予对 第二至第四组的一个轴。 通过对准本发明的CDR-FLC，并且在LCD中采用对准的CDR-FLC，增强了图像对比度和图像均匀性。

    Ferrodielectric liquid crystal display (FLCD) manufacturing method
    6.
    发明授权
    Ferrodielectric liquid crystal display (FLCD) manufacturing method 失效
    铁电液晶显示（F​​LCD）制造方法

    公开(公告)号：US06844909B2

    公开(公告)日：2005-01-18

    申请号：US10403521

    申请日：2003-04-01

    申请人： Jong-min Wang ,  Chang-ju Kim

    发明人： Jong-min Wang ,  Chang-ju Kim

    IPC分类号： G02F1/133 ,  G02F1/1337 ,  G02F1/1341 ,  G02F1/141 ,  G02F1/13

    CPC分类号： G02F1/1416 ,  G02F1/133382 ,  G02F1/1341

    摘要： A method of manufacturing a ferrodielectric liquid crystal display device includes the steps of injecting melted ferrodielectric liquid crystal in a cell formed between a lower structure body and an upper structure body each having a substrate, an electrode layer, and an orientation film and sealing the cell; cooling to obtain phase transitions of the ferrodielectric liquid crystal corresponding to a bookshelf structure; applying dc potentials to the electrode layers at temperature ranging from temperatures higher than phase transition temperatures to temperatures lower than phase transition temperatures, stopping the dc potential applications and cooling until below a predetermined temperature, and applying a reverse potential to the electrode layers and cooling again. The ferrodielectric liquid crystal display device produced by such a manufacturing method can display clear black-and-white states with the liquid crystal layers having a mono domain of the bookshelf structure.

    摘要翻译： 一种制造铁电介质液晶显示装置的方法包括以下步骤：将融化的铁电体液晶注入形成在下结构体和上结构体之间的电池中，每个电池具有基板，电极层和取向膜，并密封电池 ; 冷却以获得对应于书架结构的铁电介质液晶的相变; 在高于相变温度的温度到低于相变温度的温度范围内，将电压施加在电极层上，停止直流电位的应用和冷却直到低于预定的温度，并向电极层施加反向电位并再次冷却 。 通过这种制造方法制造的铁电体液晶显示装置可以显示清晰的黑白状态，其中液晶层具有书架结构的单畴结构。

    Method for increasing mobility of an organic thin film transistor by application of an electric field
    8.
    发明授权
    Method for increasing mobility of an organic thin film transistor by application of an electric field 有权
    通过施加电场来提高有机薄膜晶体管的迁移率的方法

    公开(公告)号：US07622323B2

    公开(公告)日：2009-11-24

    申请号：US11196382

    申请日：2005-08-04

    申请人： Chang Ju Kim ,  Eun Jeong Jeong ,  Sang Yoon Lee ,  Bon Won Koo ,  Eun Kyung Lee

    发明人： Chang Ju Kim ,  Eun Jeong Jeong ,  Sang Yoon Lee ,  Bon Won Koo ,  Eun Kyung Lee

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0541 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0545

    摘要： A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.

    摘要翻译： 一种通过施加电场来制造有机薄膜晶体管的方法。 该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压 和漏电极，并向栅电极施加交流（AC）电压。 通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。 因此，该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高离子/离子比率。

    Composition for producing organic insulator comprising an organic-inorganic metal hybrid material
    9.
    发明申请
    Composition for producing organic insulator comprising an organic-inorganic metal hybrid material 失效
    用于制造包含有机 - 无机金属混合材料的有机绝缘体的组合物

    公开(公告)号：US20090230388A1

    公开(公告)日：2009-09-17

    申请号：US12379146

    申请日：2009-02-13

    申请人： Jung Han Shin ,  Jae Jun Lee ,  Chang Ju Kim ,  Sang Yoon Lee

    发明人： Jung Han Shin ,  Jae Jun Lee ,  Chang Ju Kim ,  Sang Yoon Lee

    IPC分类号： H01L51/10 ,  B05D5/12 ,  C08L83/08

    CPC分类号： C08G77/58 ,  C08L83/14 ,  H01L51/052 ,  H01L51/0525 ,  C08L2666/02

    摘要： A composition for producing an organic insulator is provided which comprises an organic-inorganic hybrid material (as defined). The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material displays a high dielectric constant and a high degree of crosslinking. Based on these advantages, the composition comprising the organic-inorganic hybrid material can be utilized during the fabrication of various electronic devices by a wet process. A method for producing the organic insulator while utilizing the composition also is provided, as well as the resulting organic insulator, and an organic thin film transistor which incorporates the resulting insulating layer.

    摘要翻译： 提供了一种用于生产有机绝缘体的组合物，其包含有机 - 无机混合材料（如所定义的）。 杂化材料在有机溶剂和单体中表现出高溶解度，并且对基材具有优异的粘附性。 此外，混合材料显示高介电常数和高交联度。 基于这些优点，可以在通过湿法制造各种电子器件期间利用包含有机 - 无机混合材料的组合物。 还提供了一种在使用组合物的同时制造有机绝缘体的方法，以及所得的有机绝缘体和结合了所得绝缘层的有机薄膜晶体管。