公开(公告)号：US20140126105A1

公开(公告)日：2014-05-08

申请号：US13666984

申请日：2012-11-02

申请人： Chi-Hsiang Kuo ,  Cheng-Shun Chen ,  Chang-Yao Hsieh

发明人： Chi-Hsiang Kuo ,  Cheng-Shun Chen ,  Chang-Yao Hsieh

IPC分类号： H01G4/005 ,  H01L21/02

CPC分类号： H01L28/90 ,  H01L27/10852

摘要： A process for fabricating a capacitor is described. A template layer including a stack of at least one first layer and at least one second layer is formed over a substrate, wherein the at least one first layer and the at least one second layer have different etching selectivities and are arranged alternately. An opening is formed through the template layer. A wet etching process is performed to recess the at least one first layer relative to the at least one second layer, at the sidewall of the opening. A bottom electrode of the capacitor is formed at the bottom of the opening and on the sidewall of the opening, and then the template layer is removed.

摘要翻译： 描述制造电容器的工艺。 在衬底上形成包括至少一个第一层和至少一个第二层的堆叠的模板层，其中所述至少一个第一层和至少一个第二层具有不同的蚀刻选择性并交替布置。 通过模板层形成开口。 执行湿蚀刻工艺以在开口的侧壁处相对于至少一个第二层凹陷至少一个第一层。 电容器的底部电极形成在开口的底部和开口的侧壁上，然后去除模板层。

公开(公告)号：US07267229B2

公开(公告)日：2007-09-11

申请号：US10986055

申请日：2004-11-12

申请人： Cheng Shun Chen

发明人： Cheng Shun Chen

IPC分类号： B65D19/00

CPC分类号： B65D19/06 ,  B65D2519/00273 ,  B65D2519/00288 ,  B65D2519/00323 ,  B65D2519/00333 ,  B65D2519/00497 ,  B65D2519/00502 ,  B65D2519/00512 ,  B65D2519/00572 ,  B65D2519/00606 ,  B65D2519/00661 ,  B65D2519/00696 ,  B65D2519/00731

摘要： A container device includes a skeleton having four vertical posts and four lower and four upper beams to be secured between end portions of the posts. Each of the posts includes a slot formed in one side and a groove in the other side of each of the end portions. A number of corner couplers each includes three extensions perpendicular to each other, for engaging into open ends of the beams and the posts. A number of insert panels are engaged into the end portions of the posts via the grooves of the posts and each includes a screw hole. A number of fasteners are engaged into the corner couplers, and threaded with the screw holes of the insert panels to secure the corner couplers and the beams and the posts together, and to form a parallelepiped container.

摘要翻译： 容器装置包括具有四个垂直柱和四个下梁和四个上梁的骨架，以固定在柱的端部之间。 每个柱包括形成在每个端部的一侧中的槽和另一侧的槽。 多个角联轴器各自包括彼此垂直的三个延伸部分，用于接合梁和柱的开口端。 多个插入面板经由柱的凹槽接合到柱的端部中，并且每个插入面板包括螺钉孔。 许多紧固件接合到角联轴器中，并且与插入板的螺钉孔螺纹连接，以将角联接器和梁和柱固定在一起，并形成平行六面体容器。

公开(公告)号：US06753237B1

公开(公告)日：2004-06-22

申请号：US10424657

申请日：2003-04-28

申请人： Cheng-Shun Chen

发明人： Cheng-Shun Chen

IPC分类号： H01L2176

CPC分类号： H01L21/76232 ,  H01L21/76235

摘要： A method of shallow trench isolation fill-in to create the void-free trenches is disclosed. First, a liner oxide layer is formed in the trenches. Next, the silicon substrate is pre-wetted with DI water, and the liner oxide layer is etched by a chemical solution. The chemical solution is an oxide etchant, such as HF solution or BOE (buffered oxide etchant). The etching rate close to an opening of a trench is faster than a bottom of the trench. Finally, the trenches are filled with a HDP oxide layer.

摘要翻译： 公开了一种浅沟槽隔离填充的方法以产生无空隙的沟槽。 首先，在沟槽中形成衬垫氧化物层。 接下来，硅衬底用DI水预润湿，并且通过化学溶液蚀刻衬里氧化物层。 化学溶液是氧化物蚀刻剂，例如HF溶液或BOE（缓冲氧化物蚀刻剂）。 接近沟槽开口的蚀刻速率比沟槽的底部更快。 最后，沟槽填充有HDP氧化物层。

公开(公告)号：US20130037919A1

公开(公告)日：2013-02-14

申请号：US13206907

申请日：2011-08-10

申请人： Sanjeev Sapra ,  Cheng-Shun Chen ,  Hung-Ming Tsai ,  Sheng-Wei Yang

发明人： Sanjeev Sapra ,  Cheng-Shun Chen ,  Hung-Ming Tsai ,  Sheng-Wei Yang

IPC分类号： H01L21/306 ,  H01L29/06 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L23/5283 ,  B82Y30/00 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/31111 ,  H01L29/04 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of creating a trench having a portion of a bulb-shaped cross-section in silicon is disclosed. The method comprises forming at least one trench in silicon and forming a liner in the at least one trench. The liner is removed from a bottom surface of the at least one trench to expose the underlying silicon. A portion of the underlying exposed silicon is removed to form a cavity in the silicon. At least one removal cycle is conducted to remove exposed silicon in the cavity to form a bulb-shaped cross-sectional profile, with each removal cycle comprising subjecting the silicon in the cavity to ozonated water to oxidize the silicon and subjecting the oxidized silicon to a hydrogen fluoride solution to remove the oxidized silicon. A semiconductor device structure comprising the at least one trench comprising a cavity with a bulb-shaped cross-sectional profile is also disclosed.

摘要翻译： 公开了一种在硅中产生一个具有一个灯泡形横截面的沟槽的方法。 该方法包括在硅中形成至少一个沟槽并在至少一个沟槽中形成衬垫。 将衬垫从至少一个沟槽的底表面移除以暴露下面的硅。 去除底层暴露的硅的一部分以在硅中形成空腔。 进行至少一个去除周期以去除空腔中的暴露的硅以形成球形横截面轮廓，每个去除周期包括使空腔中的硅经受臭氧化水以氧化硅并将氧化的硅经受 氟化氢溶液去除氧化硅。 还公开了一种半导体器件结构，其包括包括具有灯泡形横截面轮廓的空腔的至少一个沟槽。

公开(公告)号：US08921977B2

公开(公告)日：2014-12-30

申请号：US13333564

申请日：2011-12-21

申请人： Jen Jui Huang ,  Che Chi Lee ,  Shih Shu Tsai ,  Cheng Shun Chen ,  Shao Ta Hsu ,  Chao Wen Lay ,  Chun I Hsieh ,  Ching Kai Lin

发明人： Jen Jui Huang ,  Che Chi Lee ,  Shih Shu Tsai ,  Cheng Shun Chen ,  Shao Ta Hsu ,  Chao Wen Lay ,  Chun I Hsieh ,  Ching Kai Lin

IPC分类号： H01L29/92 ,  H01L27/108 ,  H01L27/105

CPC分类号： H01L27/10817 ,  H01L27/105 ,  H01L27/10852 ,  H01L28/91

摘要： A capacitor array includes a plurality of capacitors and a support frame. Each capacitor includes an electrode. The support frame supports the plurality of electrodes and includes a plurality of support structures corresponding to the plurality of electrodes. Each support structure may surround the respective electrode. The support frame may include oxide of a doped oxidizable material.

摘要翻译： 电容器阵列包括多个电容器和支撑框架。 每个电容器包括电极。 支撑框架支撑多个电极，并且包括对应于多个电极的多个支撑结构。 每个支撑结构可以围绕相应的电极。 支撑框架可以包括掺杂可氧化材料的氧化物。

公开(公告)号：US20130161786A1

公开(公告)日：2013-06-27

申请号：US13333564

申请日：2011-12-21

申请人： Jen Jui Huang ,  Che Chi Lee ,  Shih Shu Tsai ,  Cheng Shun Chen ,  Shao Ta Hsu ,  Chao Wen Lay ,  Chun I. Hsieh ,  Ching Kai Lin

发明人： Jen Jui Huang ,  Che Chi Lee ,  Shih Shu Tsai ,  Cheng Shun Chen ,  Shao Ta Hsu ,  Chao Wen Lay ,  Chun I. Hsieh ,  Ching Kai Lin

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L27/10817 ,  H01L27/105 ,  H01L27/10852 ,  H01L28/91

摘要： A capacitor array includes a plurality of capacitors and a support frame. Each capacitor includes an electrode. The support frame supports the plurality of electrodes and includes a plurality of support structures corresponding to the plurality of electrodes. Each support structure may surround the respective electrode. The support frame may include oxide of a doped oxidizable material.

摘要翻译： 电容器阵列包括多个电容器和支撑框架。 每个电容器包括电极。 支撑框架支撑多个电极，并且包括对应于多个电极的多个支撑结构。 每个支撑结构可以围绕相应的电极。 支撑框架可以包括掺杂可氧化材料的氧化物。

公开(公告)号：US08043884B1

公开(公告)日：2011-10-25

申请号：US12786249

申请日：2010-05-24

申请人： Shin-Yu Nieh ,  Shuo-Che Chang ,  Hui-Lan Chang ,  Cheng-Shun Chen

发明人： Shin-Yu Nieh ,  Shuo-Che Chang ,  Hui-Lan Chang ,  Cheng-Shun Chen

IPC分类号： H01L21/00

CPC分类号： H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76232

摘要： A method for seamless gap filling is provided, including providing a semiconductor structure with a device layer having a gap therein, wherein the gap has an aspect ratio greater than 4. A liner layer is formed over the device layer exposed by the gap. A first un-doped oxide layer is formed over the liner layer in the gap. A doped oxide layer is formed over the first undoped oxide layer in the gap. A second un-doped oxide layer is formed over the doped oxide layer in the gap to fill the gap. An annealing process is performed on the second un-doped oxide layer, the doped oxide layer, and the first un-doped oxide to form a seamless oxide layer in the gap, wherein the seamless oxide layer has an interior doped region.

摘要翻译： 提供了一种用于无缝间隙填充的方法，包括提供具有在其中具有间隙的器件层的半导体结构，其中间隙具有大于4的纵横比。在由间隙暴露的器件层上形成衬垫层。 在间隙中的衬垫层上形成第一未掺杂氧化物层。 在间隙中的第一未掺杂氧化物层上形成掺杂的氧化物层。 在间隙中的掺杂氧化物层上形成第二未掺杂氧化物层以填充间隙。 对第二未掺杂氧化物层，掺杂氧化物层和第一未掺杂氧化物进行退火处理，以在间隙中形成无缝氧化物层，其中无缝氧化物层具有内部掺杂区域。

公开(公告)号：US06703322B2

公开(公告)日：2004-03-09

申请号：US10064668

申请日：2002-08-05

申请人： June-Min Yao ,  Cheng-Shun Chen ,  Shu-Ya Hsu

发明人： June-Min Yao ,  Cheng-Shun Chen ,  Shu-Ya Hsu

IPC分类号： H01L2131

CPC分类号： H01L21/26506 ,  H01L21/3185 ,  H01L21/823462 ,  Y10S438/981

摘要： Multiple oxide layers with different thicknesses are formed on a semiconductor substrate with a silicon surface, having a first and second region. A sacrificial oxide layer is formed on the silicon surface to cover both the first region and the second region, with a mask layer formed on the surface of the sacrificial oxide layer. By defining and patterning the mask layer, a first opening and a second opening, having predetermined surface areas, are formed in portions of the first and second regions of the mask layer to expose portions of the. The sacrificial oxide layer has a surface area equal to the first predetermined surface area, and portions of the sacrificial oxide layer having a surface area equal to the second predetermined surface area. A linear nitrogen doping process is then performed to simultaneously implant nitrogen ions with a first and second predetermined concentration into the first and second region, through the first opening and the second opening, respectively. Thereafter, the mask layer and the sacrificial oxide layer are removed, respectively. An oxidation process is performed to two silicon oxide layers with different thicknesses in the first and second regions.

摘要翻译： 在具有第一和第二区域的具有硅表面的半导体衬底上形成具有不同厚度的多个氧化物层。 牺牲氧化物层形成在硅表面上，以覆盖第一区域和第二区域，掩模层形成在牺牲氧化物层的表面上。 通过限定和图案化掩模层，具有预定表面积的第一开口和第二开口形成在掩模层的第一和第二区域的一部分中，以暴露部分。 牺牲氧化物层的表面积等于第一预定表面积，牺牲氧化物层的表面积等于第二预定表面积的部分。 然后进行线性氮掺杂过程，以分别通过第一开口和第二开口将第一和第二预定浓度的氮离子注入第一和第二区域。 此后，分别去除掩模层和牺牲氧化物层。 对第一和​​第二区域中具有不同厚度的两个氧化硅层进行氧化处理。

公开(公告)号：US09831303B2

公开(公告)日：2017-11-28

申请号：US13666984

申请日：2012-11-02

申请人： Chi-Hsiang Kuo ,  Cheng-Shun Chen ,  Chang-Yao Hsieh

发明人： Chi-Hsiang Kuo ,  Cheng-Shun Chen ,  Chang-Yao Hsieh

IPC分类号： H01G4/30 ,  H01G4/232 ,  H01G4/005 ,  H01L29/94 ,  H01L49/02 ,  H01L27/108

CPC分类号： H01L28/90 ,  H01L27/10852

摘要： A process for fabricating a capacitor is described. A template layer including a stack of at least one first layer and at least one second layer is formed over a substrate, wherein the at least one first layer and the at least one second layer have different etching selectivities and are arranged alternately. An opening is formed through the template layer. A wet etching process is performed to recess the at least one first layer relative to the at least one second layer, at the sidewall of the opening. A bottom electrode of the capacitor is formed at the bottom of the opening and on the sidewall of the opening, and then the template layer is removed.

公开(公告)号：US09117759B2

公开(公告)日：2015-08-25

申请号：US13206907

申请日：2011-08-10

申请人： Sanjeev Sapra ,  Cheng-Shun Chen ,  Hung-Ming Tsai ,  Sheng-Wei Yang

发明人： Sanjeev Sapra ,  Cheng-Shun Chen ,  Hung-Ming Tsai ,  Sheng-Wei Yang

IPC分类号： H01L21/3205 ,  H01L21/306 ,  H01L21/02 ,  H01L21/308 ,  H01L21/311 ,  B82Y30/00

CPC分类号： H01L23/5283 ,  B82Y30/00 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/31111 ,  H01L29/04 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of creating a trench having a portion of a bulb-shaped cross-section in silicon is disclosed. The method comprises forming at least one trench in silicon and forming a liner in the at least one trench. The liner is removed from a bottom surface of the at least one trench to expose the underlying silicon. A portion of the underlying exposed silicon is removed to form a cavity in the silicon. At least one removal cycle is conducted to remove exposed silicon in the cavity to form a bulb-shaped cross-sectional profile, with each removal cycle comprising subjecting the silicon in the cavity to ozonated water to oxidize the silicon and subjecting the oxidized silicon to a hydrogen fluoride solution to remove the oxidized silicon. A semiconductor device structure comprising the at least one trench comprising a cavity with a bulb-shaped cross-sectional profile is also disclosed.

摘要翻译： 公开了一种在硅中产生一个具有一个灯泡形横截面的沟槽的方法。 该方法包括在硅中形成至少一个沟槽并在至少一个沟槽中形成衬垫。 将衬垫从至少一个沟槽的底表面移除以暴露下面的硅。 去除底层暴露的硅的一部分以在硅中形成空腔。 进行至少一个去除周期以去除空腔中的暴露的硅以形成球形横截面轮廓，每个去除周期包括使空腔中的硅经受臭氧化水以氧化硅并将氧化的硅经受 氟化氢溶液去除氧化硅。 还公开了一种半导体器件结构，其包括包括具有灯泡形横截面轮廓的空腔的至少一个沟槽。