公开(公告)号：US08338217B2

公开(公告)日：2012-12-25

申请号：US13049886

申请日：2011-03-16

申请人： Yen-Cheng Hu ,  Cheng-Chang Kuo ,  Jun-Wei Chen ,  Hsin-Feng Li ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

发明人： Yen-Cheng Hu ,  Cheng-Chang Kuo ,  Jun-Wei Chen ,  Hsin-Feng Li ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

IPC分类号： H01L31/18

CPC分类号： H01L31/068 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.

摘要翻译： 提供一种制造太阳能电池的方法。 提供具有第一表面和第二表面的第一类型的半导体衬底。 在第一类型半导体衬底的部分中形成第二类型的掺杂扩散区。 第二类掺杂扩散区从第一表面在第一类型半导体衬底内延伸。 在第一表面上形成与第二类掺杂扩散区接触的抗反射涂层（ARC）。 在ARC上形成包括导电颗粒和掺杂剂的导电浆料。 执行用于使导电浆料穿透ARC以形成嵌入ARC中的第一接触导体的共烧制方法。 在共烧制过程中，掺杂剂扩散到第二类掺杂扩散区，形成第二类重掺杂扩散区。 第二接触导体形成在第二表面上。

公开(公告)号：US07338845B2

公开(公告)日：2008-03-04

申请号：US11306811

申请日：2006-01-12

申请人： Cheng-Chang Kuo

发明人： Cheng-Chang Kuo

IPC分类号： H01L21/00

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78621

摘要： An LTPS-TFT structure comprises a gate, a gate dielectric layer, a patterned silicon layer, a patterned insulating layer, an ohmic contact layer and a source/drain layer. The gate and the gate dielectric layer are disposed on the substrate. The patterned silicon layer and the patterned insulating layer are disposed on the gate dielectric layer over the gate. The patterned silicon layer comprises a polysilicon channel region and an amorphous silicon hot carrier restrain region. The ohmic contact layer is disposed on a portion of the patterned silicon layer other than the polysilicon channel region and the amorphous silicon hot carrier restrain region and a portion of the patterned insulating layer over the amorphous silicon hot carrier restrain region. The source/drain layer is disposed on the ohmic contact layer and the gate dielectric layer.

摘要翻译： LTPS-TFT结构包括栅极，栅极电介质层，图案化硅层，图案化绝缘层，欧姆接触层和源极/漏极层。 栅极和栅极电介质层设置在基板上。 图案化硅层和图案化绝缘层设置在栅极上的栅极电介质层上。 图案化硅层包括多晶硅沟道区和非晶硅热载流子限制区。 欧姆接触层设置在除了多晶硅沟道区域和非晶硅热载流子限制区域之外的图案化硅层的一部分上，以及非晶硅热载流子限制区域上的图案化绝缘层的一部分。 源极/漏极层设置在欧姆接触层和栅极电介质层上。

公开(公告)号：US20060008953A1

公开(公告)日：2006-01-12

申请号：US11162569

申请日：2005-09-15

申请人： Cheng Chang Kuo

发明人： Cheng Chang Kuo

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78645 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A LTPS-TFT structure comprising a cap layer, a polysilicon film and a gate is provided. The cap layer is disposed over the substrate with a gap between the two. The polysilicon film is disposed over the cap layer and is divided into a channel region and a source/drain region on each side of the channel region. The channel region is located above the gap. The gate is disposed above the channel region. Because the gap lies underneath the channel region, the thermal conductivity in the channel region is lower during the laser annealing process. Therefore, the silicon atoms can have a longer re-crystallization time so that larger grains are formed within the channel region and grain boundary therein is reduced. Furthermore, the grain orientation of the polysilicon film is mostly parallel to the transmission direction of electron within the transistor so that the operation efficiency of the transistor is improved.

摘要翻译： 提供包括盖层，多晶硅膜和栅极的LTPS-TFT结构。 盖层设置在衬底上，两者之间具有间隙。 多晶硅膜设置在盖层之上，并且被分成沟道区域和沟道区域的每一侧上的源极/漏极区域。 通道区域位于间隙之上。 门设置在通道区域上方。 由于间隙位于通道区域的下方，所以在激光退火过程中，通道区域的热导率较低。 因此，硅原子可以具有更长的再结晶时间，从而在沟道区内形成较大的晶粒，并且晶界减小。 此外，多晶硅膜的晶粒取向主要与晶体管内的电子传输方向平行，从而提高了晶体管的工作效率。

公开(公告)号：US20050218403A1

公开(公告)日：2005-10-06

申请号：US10710844

申请日：2004-08-06

申请人： Cheng Chang Kuo

发明人： Cheng Chang Kuo

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/265 ,  H01L21/336 ,  H01L29/786 ,  H01L31/036

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78621

摘要： An LTPS-TFT structure comprises a gate, a gate dielectric layer, a patterned silicon layer, a patterned insulating layer, an ohmic contact layer and a source/drain layer. The gate and the gate dielectric layer are disposed on the substrate. The patterned silicon layer and the patterned insulating layer are disposed on the gate dielectric layer over the gate. The patterned silicon layer comprises a polysilicon channel region and an amorphous silicon hot carrier restrain region. The ohmic contact layer is disposed on a portion of the patterned silicon layer other than the polysilicon channel region and the amorphous silicon hot carrier restrain region and a portion of the patterned insulating layer over the amorphous silicon hot carrier restrain region. The source/drain layer is disposed on the ohmic contact layer and the gate dielectric layer.

摘要翻译： LTPS-TFT结构包括栅极，栅极电介质层，图案化硅层，图案化绝缘层，欧姆接触层和源极/漏极层。 栅极和栅极电介质层设置在基板上。 图案化硅层和图案化绝缘层设置在栅极上的栅极电介质层上。 图案化硅层包括多晶硅沟道区和非晶硅热载流子限制区。 欧姆接触层设置在除了多晶硅沟道区域和非晶硅热载流子限制区域之外的图案化硅层的一部分上，以及非晶硅热载流子限制区域上的图案化绝缘层的一部分。 源极/漏极层设置在欧姆接触层和栅极电介质层上。

公开(公告)号：US20050224876A1

公开(公告)日：2005-10-13

申请号：US10710729

申请日：2004-07-30

申请人： Cheng Chang Kuo

发明人： Cheng Chang Kuo

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L27/01 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/78645 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A LTPS-TFT structure comprising a cap layer, a polysilicon film and a gate is provided. The cap layer is disposed over the substrate with a gap between the two. The polysilicon film is disposed over the cap layer and is divided into a channel region and a source/drain region on each side of the channel region. The channel region is located above the gap. The gate is disposed above the channel region. Because the gap lies underneath the channel region, the thermal conductivity in the channel region is lower during the laser annealing process. Therefore, the silicon atoms can have a longer re-crystallization time so that larger grains are formed within the channel region and grain boundary therein is reduced. Furthermore, the grain orientation of the polysilicon film is mostly parallel to the transmission direction of electron within the transistor so that the operation efficiency of the transistor is improved.

摘要翻译： 提供包括盖层，多晶硅膜和栅极的LTPS-TFT结构。 盖层设置在衬底上，两者之间具有间隙。 多晶硅膜设置在盖层之上，并且被分成沟道区域和沟道区域的每一侧上的源极/漏极区域。 通道区域位于间隙之上。 门设置在通道区域上方。 由于间隙位于通道区域的下方，所以在激光退火过程中，通道区域的热导率较低。 因此，硅原子可以具有更长的再结晶时间，从而在沟道区内形成较大的晶粒，并且晶界减小。 此外，多晶硅膜的晶粒取向主要与晶体管内的电子传输方向平行，从而提高了晶体管的工作效率。

公开(公告)号：US20120171805A1

公开(公告)日：2012-07-05

申请号：US13049886

申请日：2011-03-16

申请人： Yen-Cheng Hu ,  Cheng-Chang Kuo ,  Jun-Wei Chen ,  Hsin-Feng Li ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

发明人： Yen-Cheng Hu ,  Cheng-Chang Kuo ,  Jun-Wei Chen ,  Hsin-Feng Li ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

IPC分类号： H01L31/18

CPC分类号： H01L31/068 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.

摘要翻译： 提供一种制造太阳能电池的方法。 提供具有第一表面和第二表面的第一类型的半导体衬底。 在第一类型半导体衬底的部分中形成第二类型的掺杂扩散区。 第二类掺杂扩散区从第一表面在第一类型半导体衬底内延伸。 在第一表面上形成与第二类掺杂扩散区接触的抗反射涂层（ARC）。 在ARC上形成包括导电颗粒和掺杂剂的导电浆料。 执行用于使导电浆料穿透ARC以形成嵌入ARC中的第一接触导体的共烧制方法。 在共烧制过程中，掺杂剂扩散到第二类掺杂扩散区，形成第二类重掺杂扩散区。 第二接触导体形成在第二表面上。

公开(公告)号：US20060199316A1

公开(公告)日：2006-09-07

申请号：US11306811

申请日：2006-01-12

申请人： Cheng-Chang Kuo

发明人： Cheng-Chang Kuo

IPC分类号： H01L21/84

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78621

摘要： An LTPS-TFT structure comprises a gate, a gate dielectric layer, a patterned silicon layer, a patterned insulating layer, an ohmic contact layer and a source/drain layer. The gate and the gate dielectric layer are disposed on the substrate. The patterned silicon layer and the patterned insulating layer are disposed on the gate dielectric layer over the gate. The patterned silicon layer comprises a polysilicon channel region and an amorphous silicon hot carrier restrain region. The ohmic contact layer is disposed on a portion of the patterned silicon layer other than the polysilicon channel region and the amorphous silicon hot carrier restrain region and a portion of the patterned insulating layer over the amorphous silicon hot carrier restrain region. The source/drain layer is disposed on the ohmic contact layer and the gate dielectric layer.

摘要翻译： LTPS-TFT结构包括栅极，栅极电介质层，图案化硅层，图案化绝缘层，欧姆接触层和源极/漏极层。 栅极和栅极电介质层设置在基板上。 图案化硅层和图案化绝缘层设置在栅极上的栅极电介质层上。 图案化硅层包括多晶硅沟道区和非晶硅热载流子限制区。 欧姆接触层设置在除了多晶硅沟道区域和非晶硅热载流子限制区域之外的图案化硅层的一部分上，以及非晶硅热载流子限制区域上的图案化绝缘层的一部分。 源极/漏极层设置在欧姆接触层和栅极电介质层上。

公开(公告)号：US20120138127A1

公开(公告)日：2012-06-07

申请号：US13038388

申请日：2011-03-02

申请人： Cheng-Chang Kuo ,  Yen-Cheng Hu ,  Hsin-Feng Li ,  Tsung-Pao Chen ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

发明人： Cheng-Chang Kuo ,  Yen-Cheng Hu ,  Hsin-Feng Li ,  Tsung-Pao Chen ,  Jen-Chieh Chen ,  Zhen-Cheng Wu

IPC分类号： H01L31/06 ,  H01L31/0232

CPC分类号： H01L31/1864 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell is provided with a comb-like first electrode, a sheet-like second electrode corresponding to the doping regions to obtain high photoelectric conversion efficiency by fully utilizing the space in the semiconductor substrate. Furthermore, the sheet-like second electrode can be formed by a material having high reflectivity to improve the light utilization rate of the solar cell. The manufacturing process of the solar cell is simplified and the processing yield is improved.

摘要翻译： 提供太阳能电池及其制造方法。 采用激光掺杂工艺形成正掺杂区和负掺杂区，用于精确控制掺杂区。 由于通过稍后的烧制工艺形成接触开口，所以不会出现金属接触覆盖问题。 太阳能电池设置有梳状的第一电极，对应于掺杂区域的片状的第二电极，通过充分利用半导体衬底中的空间来获得高的光电转换效率。 此外，片状第二电极可以由具有高反射率的材料形成，以提高太阳能电池的光利用率。 太阳能电池的制造过程简化，加工成品率提高。