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    Trench MOS transistor having a trench doped region formed deeper than the trench gate
    1.
    发明授权
    Trench MOS transistor having a trench doped region formed deeper than the trench gate 有权
    沟槽MOS晶体管具有比沟槽栅极更深的沟槽掺杂区域

    公开(公告)号：US08835935B2

    公开(公告)日：2014-09-16

    申请号：US13433272

    申请日：2012-03-28

    申请人： Chien-Chung Hung ,  Young-Shying Chen ,  Cheng-Tyng Yen ,  Chwan-Ying Lee

    发明人： Chien-Chung Hung ,  Young-Shying Chen ,  Cheng-Tyng Yen ,  Chwan-Ying Lee

    IPC分类号： H01L29/24

    CPC分类号： H01L21/0475 ,  H01L29/66227 ,  H01L29/7827

    摘要： A trench metal oxide semiconductor transistor device and a manufacturing method thereof are described. The trench metal oxide semiconductor transistor device includes a substrate of a first conductivity type, a drift region of the first conductivity type, a deep trench doped region of a second conductivity type, an epitaxial region of the second conductivity type, a trench gate, a gate insulating layer, a source region, a drain electrode and a source electrode. The drift region has at least one deep trench therein, and the deep trench doped region is disposed in the deep trench. The trench gate passes through the epitaxial region, and a distance between a bottom of the trench gate and a bottom of the deep trench doped region is 0.5˜3 μm.

    摘要翻译： 描述了沟槽金属氧化物半导体晶体管器件及其制造方法。 沟槽金属氧化物半导体晶体管器件包括第一导电类型的衬底，第一导电类型的漂移区，第二导电类型的深沟槽掺杂区，第二导电类型的外延区，沟槽栅， 栅极绝缘层，源极区，漏极和源电极。 漂移区域中具有至少一个深沟槽，并且深沟槽掺杂区域设置在深沟槽中。 沟槽栅极通过外延区域，并且沟槽栅极的底部与深沟槽掺杂区域的底部之间的距离为0.5〜3μm。

    TRENCH METAL OXIDE SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    TRENCH METAL OXIDE SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    铁氧体氧化物半导体晶体管器件及其制造方法

    公开(公告)号：US20130161736A1

    公开(公告)日：2013-06-27

    申请号：US13433272

    申请日：2012-03-28

    申请人： Chien-Chung Hung ,  Young-Shying Chen ,  Cheng-Tyng Yen ,  Chwan-Ying Lee

    发明人： Chien-Chung Hung ,  Young-Shying Chen ,  Cheng-Tyng Yen ,  Chwan-Ying Lee

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/0475 ,  H01L29/66227 ,  H01L29/7827

    摘要： A trench metal oxide semiconductor transistor device and a manufacturing method thereof are described. The trench metal oxide semiconductor transistor device includes a substrate of a first conductivity type, a drift region of the first conductivity type, a deep trench doped region of a second conductivity type, an epitaxial region of the second conductivity type, a trench gate, a gate insulating layer, a source region, a drain electrode and a source electrode. The drift region has at least one deep trench therein, and the deep trench doped region is disposed in the deep trench. The trench gate passes through the epitaxial region, and a distance between a bottom of the trench gate and a bottom of the deep trench doped region is 0.5˜3 um.

    摘要翻译： 描述了沟槽金属氧化物半导体晶体管器件及其制造方法。 沟槽金属氧化物半导体晶体管器件包括第一导电类型的衬底，第一导电类型的漂移区，第二导电类型的深沟槽掺杂区，第二导电类型的外延区，沟槽栅， 栅极绝缘层，源极区，漏极和源电极。 漂移区域中具有至少一个深沟槽，并且深沟槽掺杂区域设置在深沟槽中。 沟槽栅极通过外延区域，并且沟槽栅极的底部和深沟槽掺杂区域的底部之间的距离为0.5〜3um。

    Magnetic field sensors and sensng circuits
    3.
    发明授权
    Magnetic field sensors and sensng circuits 有权

    公开(公告)号：US09645204B2

    公开(公告)日：2017-05-09

    申请号：US13722715

    申请日：2012-12-20

    申请人： Young-Shying Chen ,  Cheng-Tyng Yen

    发明人： Young-Shying Chen ,  Cheng-Tyng Yen

    IPC分类号： G01R33/09

    CPC分类号： G01R33/098 ,  G01R33/0017

    摘要： A magnetic sensor for sensing an external magnetic field includes first and second electrodes and first and second magnetic tunneling junctions. The first and second electrodes are disposed over a substrate; and the first and second magnetic tunneling junctions are conductively disposed between the first and second electrodes and connected in parallel between the first and second electrodes. The first and second magnetic tunneling junctions are arranged along a first easy axis of the magnetic sensor. The first magnetic tunneling junction includes a first pinned magnetization and a first free magnetization, and the second magnetic tunneling junction includes a second pinned magnetization and a second free magnetization. The first free magnetization and the second free magnetization are arranged substantially in parallel to the first easy axis and in substantially opposite directions.

    STRUCTURE OF TMR AND FABRICATION METHOD OF INTEGRATED 3-AXIS MAGNETIC FIELD SENSOR AND SENSING CIRCUIT
    4.
    发明申请
    STRUCTURE OF TMR AND FABRICATION METHOD OF INTEGRATED 3-AXIS MAGNETIC FIELD SENSOR AND SENSING CIRCUIT 审中-公开
    集成三轴磁场传感器和感应电路的TMR和制造方法的结构

    公开(公告)号：US20120068698A1

    公开(公告)日：2012-03-22

    申请号：US13097083

    申请日：2011-04-29

    申请人： Young-Shying Chen ,  Cheng-Tyng Yen

    发明人： Young-Shying Chen ,  Cheng-Tyng Yen

    IPC分类号： G01R33/02 ,  H01L43/12 ,  H01L29/82

    CPC分类号： G01R33/098 ,  H01L27/22

    摘要： A structure of TMR includes two magnetic tunneling junction (MTJ) devices with the same pattern and same magnetic film stack on a same conducting bottom electrode and a parallel connection of conducting top electrode. Each MTJ device includes a pinned layer on the bottom electrode, having a pinned magnetization; a non-magnetic tunneling on the pinned layer; and a free layer on the tunneling layer, having a free magnetization. These two MTJ devices have a collinear of easy-axis and their pinned magnetizations all are parallel to a same pinned direction which has an angle of 45 degree to easy-axis; their free magnetizations initially are parallel to the easy-axis but directions are mutual anti-parallel by applying a current generated ampere field. The magnetic field sensing direction is perpendicular to the easy-axis on the substrate.

    摘要翻译： TMR的结构包括在相同的导电底部电极上具有相同图案和相同磁性膜堆叠的两个磁性隧道结（MTJ）器件和导电顶部电极的并联连接。 每个MTJ装置包括在底部电极上的固定层，具有钉扎​​磁化; 钉扎层上的非磁性隧道; 和隧道层上的自由层，具有自由磁化强度。 这两个MTJ装置具有易轴共线，并且它们的钉扎磁化全部平行于与易轴成45度角的相同销钉方向; 它们的自由磁化最初平行于易轴，但通过施加电流产生的安培场，方向是相互反平行的。 磁场感应方向垂直于衬底上的易轴。

    MAGNETORESISTIVE DEVICE WITH PERPENDICULAR MAGNETIZATION
    5.
    发明申请
    MAGNETORESISTIVE DEVICE WITH PERPENDICULAR MAGNETIZATION 审中-公开
    具有完全磁化的磁阻器件

    公开(公告)号：US20110159316A1

    公开(公告)日：2011-06-30

    申请号：US12713193

    申请日：2010-02-26

    申请人： Yung-Hung Wang ,  Cheng-Tyng Yen ,  Shan-Yi Yang

    发明人： Yung-Hung Wang ,  Cheng-Tyng Yen ,  Shan-Yi Yang

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive device with perpendicular magnetization includes a magnetic reference layer, a first magnetic multi-layer film, a tunneling barrier layer, a second magnetic multi-layer film, and a magnetic free layer. The magnetic reference layer has a first magnetization direction, perpendicular to the magnetic reference layer. The first magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the magnetic reference layer. The tunneling barrier layer is disposed in contact on the first magnetic multi-layer film. The second magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the tunneling barrier layer. The magnetic free layer is disposed in contact on the second magnetic multi-layer film, having a second magnetization direction capable of being switched to be parallel or anti-parallel to the first magnetization direction.

    摘要翻译： 具有垂直磁化的磁阻装置包括磁参考层，第一磁性多层膜，隧道势垒层，第二磁性多层膜和无磁性层。 磁参考层具有垂直于磁参考层的第一磁化方向。 具有非磁性材料层的第一磁性多层膜与磁性参考层接触地设置。 隧道势垒层与第一磁性多层膜接触地设置。 具有非磁性材料层的第二磁性多层膜与隧道势垒层接触地设置。 所述无磁性层与所述第二磁性多层膜接触地设置，所述第二磁性多层膜具有能够被切换为与所述第一磁化方向平行或反平行的第二磁化方向。

    MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING
    6.
    发明申请
    MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING 有权
    磁记忆元件利用旋转传递切换

    公开(公告)号：US20110001203A1

    公开(公告)日：2011-01-06

    申请号：US12883188

    申请日：2010-09-16

    申请人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

    发明人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161

    摘要： A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.

    摘要翻译： 磁存储元件包括钉扎层，隧道势垒层，自由层和稳定层。 隧道势垒层设置在钉扎层上。 自由层设置在隧道势垒层上。 稳定层设置在自由层上。

    Magnetic memory element utilizing spin transfer switching
    8.
    发明授权
    Magnetic memory element utilizing spin transfer switching 有权
    磁记忆元件利用自旋转移切换

    公开(公告)号：US07829964B2

    公开(公告)日：2010-11-09

    申请号：US12398181

    申请日：2009-03-05

    申请人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

    发明人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161

    摘要： A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.

    摘要翻译： 利用自旋转移切换的磁存储元件包括钉扎层，隧道势垒层和自由层结构。 隧道势垒层设置在钉扎层上。 自由层结构包括复合自由层。 复合自由层包括第一自由层，插入层和第二自由层。 第一自由层设置在隧道势垒层上并具有第一自旋极化因数和第一饱和磁化强度。 插入层设置在第一自由层上。 第二自由层设置在插入层上，并且具有小于第一自旋极化因子的第二自旋极化因子和小于第一饱和磁化强度的第二饱和磁化强度。 第一自由层和第二自由层的磁化矢量被布置成平行耦合。

    Magnetic random access memory
    9.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08421171B2

    公开(公告)日：2013-04-16

    申请号：US12960559

    申请日：2010-12-06

    申请人： Cheng-Tyng Yen ,  Yung-Hung Wang

    发明人： Cheng-Tyng Yen ,  Yung-Hung Wang

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： H01L43/08 ,  G11C11/161

    摘要： A magnetic random access memory (MRAM) has a perpendicular magnetization direction. The MRAM includes a first magnetic layer, a second magnetic layer, a first polarization enhancement layer, a second polarization enhancement layer, a barrier layer, a spacer, and a free assisting layer. A pinned layer formed by the first magnetic layer and the first polarization enhancement layer has a first magnetization direction and a first perpendicular magnetic anisotropy. A free layer formed by the second magnetic layer and the second polarization enhancement layer has a second magnetization direction and a second perpendicular magnetic anisotropy. The barrier layer is disposed between the first polarization enhancement layer and the second polarization enhancement layer. The spacer is disposed on the second magnetic layer. The free assisting layer is disposed on the spacer and has an in-plane magnetic anisotropy. The spacer and the barrier layer are on opposite sides of the free layer.

    摘要翻译： 磁性随机存取存储器（MRAM）具有垂直磁化方向。 MRAM包括第一磁性层，第二磁性层，第一极化增强层，第二极化增强层，阻挡层，间隔物和自由辅助层。 由第一磁性层和第一极化增强层形成的钉扎层具有第一磁化方向和第一垂直磁各向异性。 由第二磁性层和第二极化增强层形成的自由层具有第二磁化方向和第二垂直磁各向异性。 阻挡层设置在第一极化增强层和第二极化增强层之间。 间隔件设置在第二磁性层上。 自由辅助层设置在间隔物上并具有面内的磁各向异性。 间隔物和阻挡层位于自由层的相对侧上。