公开(公告)号：US20080057711A1

公开(公告)日：2008-03-06

申请号：US11511698

申请日：2006-08-29

申请人： Phillip Daniel Matz ,  Sopa Chevacharoenkul ,  Ching-Te Lin ,  Basab Chatterjee ,  Anand Reddy ,  Kenneth Joseph Newton ,  Ju-Ai Ruan

发明人： Phillip Daniel Matz ,  Sopa Chevacharoenkul ,  Ching-Te Lin ,  Basab Chatterjee ,  Anand Reddy ,  Kenneth Joseph Newton ,  Ju-Ai Ruan

IPC分类号： H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/02063 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76883

摘要： A semiconductor device is fabricated while mitigating conductive void formation in metallization layers. A substrate is provided. A first dielectric layer is formed over the substrate. A conductive trench is formed within the first dielectric layer. An etch stop layer is formed over the first dielectric layer. A second dielectric layer is formed over/on the etch stop layer. A resist mask is formed over the device and via openings are etched in the second dielectric layer. The resist mask is removed by an ash process. A clean process is performed that mitigates/reduces surface charge on exposed portions of the etch stop layer. Additional surface charge reduction techniques are employed. The via openings are filled with a conductive material and a planarization process is performed to remove excess fill material.

摘要翻译： 制造半导体器件，同时减轻金属化层中的导电空隙形成。 提供基板。 第一电介质层形成在衬底上。 在第一电介质层内形成导电沟槽。 在第一介电层上形成蚀刻停止层。 在蚀刻停止层上/上形成第二介电层。 在器件上形成抗蚀剂掩模，并且在第二介电层中蚀刻通孔。 抗蚀剂掩模通过灰过程去除。 执行清洁处理，其减轻/减少蚀刻停止层的暴露部分上的表面电荷。 采用附加的表面电荷还原技术。 通孔开口填充有导电材料，并执行平面化处理以去除多余的填充材料。

公开(公告)号：US07727885B2

公开(公告)日：2010-06-01

申请号：US11511698

申请日：2006-08-29

申请人： Phillip Daniel Matz ,  Sopa Chevacharoenkul ,  Ching-Te Lin ,  Basab Chatterjee ,  Anand Reddy ,  Kenneth Joseph Newton ,  Ju-Ai Ruan

发明人： Phillip Daniel Matz ,  Sopa Chevacharoenkul ,  Ching-Te Lin ,  Basab Chatterjee ,  Anand Reddy ,  Kenneth Joseph Newton ,  Ju-Ai Ruan

IPC分类号： H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/02063 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76883

摘要： A semiconductor device is fabricated while mitigating conductive void formation in metallization layers. A substrate is provided. A first dielectric layer is formed over the substrate. A conductive trench is formed within the first dielectric layer. An etch stop layer is formed over the first dielectric layer. A second dielectric layer is formed over/on the etch stop layer. A resist mask is formed over the device and via openings are etched in the second dielectric layer. The resist mask is removed by an ash process. A clean process is performed that mitigates/reduces surface charge on exposed portions of the etch stop layer. Additional surface charge reduction techniques are employed. The via openings are filled with a conductive material and a planarization process is performed to remove excess fill material.

摘要翻译： 制造半导体器件，同时减轻金属化层中的导电空隙形成。 提供基板。 第一电介质层形成在衬底上。 在第一电介质层内形成导电沟槽。 在第一介电层上形成蚀刻停止层。 在蚀刻停止层上/上形成第二介电层。 在器件上形成抗蚀剂掩模，并且在第二介电层中蚀刻通孔。 抗蚀剂掩模通过灰过程去除。 执行清洁处理，其减轻/减少蚀刻停止层的暴露部分上的表面电荷。 采用附加的表面电荷还原技术。 通孔开口填充有导电材料，并执行平面化处理以去除多余的填充材料。

公开(公告)号：US06624066B2

公开(公告)日：2003-09-23

申请号：US09783157

申请日：2001-02-14

申请人： Jiong-Ping Lu ,  Ching-Te Lin

发明人： Jiong-Ping Lu ,  Ching-Te Lin

IPC分类号： H01L214763

CPC分类号： H01L23/53238 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Two barrier layers are used for a via or contact. A thin CVD barrier (124) (e.g., SiN, TiSiN, TaSiN, etc.) is deposited over a structure including within a via or contact hole (106). A sputter etch is then performed to remove the CVD barrier (124) at the bottom of the via/contact. A second barrier (126) is deposited after the sputter etch. The second barrier (126) comprises a lower resistivity barrier such as Ta, Ti, Mo, W, TaN, WN, MoN or TiN since the second barrier remains at the bottom of the via or contact. A metal fill process can then be performed.