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公开(公告)号：US08659045B2
公开(公告)日：2014-02-25
申请号：US11848458
申请日：2007-08-31
申请人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
发明人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
摘要翻译： 本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极 结构和结构上与外延堆叠结构的第一部分上的结构分离。 氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。
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公开(公告)号：US20090200667A1
公开(公告)日：2009-08-13
申请号：US12426061
申请日：2009-04-17
申请人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L23/532
摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.
摘要翻译： 本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。 根据本发明优选实施方案的欧姆接触膜的组成由通式MxQzNy表示，其中M表示II族化学元素，Q表示IV族化学元素，N表示V基团化学元素， = x <= 3,1 <= y <= 3,1 <= z <= 3，x和y和z是摩尔数。
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公开(公告)号：US20080277678A1
公开(公告)日：2008-11-13
申请号：US11801155
申请日：2007-05-08
申请人： Yu-Chu Li , Chiung-Chi Tsai , Tzong-Liang Tsai , Su-Hui Lin
发明人： Yu-Chu Li , Chiung-Chi Tsai , Tzong-Liang Tsai , Su-Hui Lin
摘要： A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.
摘要翻译： 一种制造发光器件的方法包括：在衬底上形成多层结构; 在所述多层结构的一侧上形成图案化掩模材料，使得所述图案化掩模材料覆盖所述多层结构的蚀刻区域; 在多层结构上形成粗糙层; 从所述多层结构中去除所述图案化掩模材料，以暴露所述多层结构的蚀刻区域; 在粗糙层上形成蚀刻掩模材料; 在暴露的蚀刻区域干蚀刻多层结构，以便在对应于多层结构的蚀刻区域的第一半导体层上限定电极形成区域; 以及在所述第一半导体层的电极形成区上形成电极。
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公开(公告)号：US20080194080A1
公开(公告)日：2008-08-14
申请号：US11706822
申请日：2007-02-13
申请人： Chih-Ching Cheng , Chiung-Chi Tsai
发明人： Chih-Ching Cheng , Chiung-Chi Tsai
CPC分类号： H01L33/0095 , H01L33/20 , Y10T83/0304
摘要： A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.
摘要翻译： 用于切割光电半导体晶片的方法具有制备光电子半导体晶片，激光划线，金刚石锯切割和形成光电子半导体管芯的步骤。 用于切割光电半导体晶片的产品具有基板和外延层。 基板具有第一表面，第二表面和两个粗糙表面。 粗糙表面通过激光划片晶片来形成，以在晶片上限定多个引导槽，并且金刚石锯沿着引导槽切割晶片。 在衬底的第一表面上外延地形成外延层。
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公开(公告)号：US20080054289A1
公开(公告)日：2008-03-06
申请号：US11848458
申请日：2007-08-31
申请人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
发明人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
摘要翻译： 本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极 结构和结构上与外延堆叠结构的第一部分上的结构分离。 氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。
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公开(公告)号：US20080023835A1
公开(公告)日：2008-01-31
申请号：US11797851
申请日：2007-05-08
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L23/52
摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxNy, where M represents the II group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, and x and y are molar numbers.
摘要翻译： 本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。 根据本发明优选实施方案的欧姆接触膜的组成由通式M X N Y Y表示，其中M表示II族化学元素，N 表示V族化学元素，1 <= x <= 3,1 <= y <= 3，x和y是摩尔数。
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公开(公告)号：US07659557B2
公开(公告)日：2010-02-09
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译： 本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。 根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（ 或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。
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8.发明申请公开(公告)号：US20080296588A1
公开(公告)日：2008-12-04
申请号：US11976872
申请日：2007-10-29
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai
IPC分类号： H01L33/00 , H01L21/302 , H01L29/06
CPC分类号： H01L33/22 , H01L21/3043 , H01L29/30
摘要： The invention discloses a substrate and a fabricating method thereof for epitaxy of a semiconductor light-emitting device. An upper surface of the substrate according to the invention, where the epitaxy of the semiconductor light-emitting device is to be performed, has a plurality of electromagnetic-wave-scribed nicks.
摘要翻译： 本发明公开了一种用于半导体发光器件外延的衬底及其制造方法。 根据本发明的基板的上表面，其中将执行半导体发光器件的外延，具有多个电磁波刻划。
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公开(公告)号：US20080023709A1
公开(公告)日：2008-01-31
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译： 本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。 根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（ 或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。
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公开(公告)号：US09306118B2
公开(公告)日：2016-04-05
申请号：US11976872
申请日：2007-10-29
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai
IPC分类号： H01L33/00 , H01L33/22 , H01L29/30 , H01L21/304
CPC分类号： H01L33/22 , H01L21/3043 , H01L29/30
摘要： A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.
摘要翻译： 处理基板的方法包括：在不使用掩模的情况下通过电磁波在基板的上表面上形成多个切口，其中每个切口的侧壁在其上形成熔融; 通过去除融合来粗糙化侧壁; 并在上表面和刻痕上形成外延多层结构。 每个切口的粗糙化的侧壁具有等于或大于1nm的平均粗糙度。
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