公开(公告)号：US07737761B2

公开(公告)日：2010-06-15

申请号：US12019032

申请日：2008-01-24

申请人： Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

发明人： Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

IPC分类号： H03K17/16 ,  H03K17/30

CPC分类号： H03K17/567 ,  H03K17/163 ,  H03K17/168 ,  H03K2217/0036

摘要： A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

摘要翻译： 本发明的目的是减少振荡等引起的噪声，同时降低元件的导通功率损耗并且在具有小恢复的SiC二极管的功率半导体元件的开关电路中的二极管的反向恢复损耗 电流并联。 解决该问题的手段是基于检测值来检测功率半导体开关元件的栅极电压和/或集电极电压并且以几个阶段改变栅极驱动电压。

公开(公告)号：US20090168471A1

公开(公告)日：2009-07-02

申请号：US12342361

申请日：2008-12-23

申请人： Dai Tsugawa ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Haruka Shimizu

发明人： Dai Tsugawa ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Haruka Shimizu

IPC分类号： H02H7/122

CPC分类号： H03K17/08148 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/8611 ,  H01L29/872 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03K17/74 ,  H03K2217/0036 ,  H01L2924/00014 ,  H01L2924/00

摘要： A circuit device includes at least one switching element and a free wheeling diode connected in parallel to the switching element. The free wheeling diode is made up of a Schottky barrier diode using a semiconductor material having a band gap larger than silicon as its base material and also a silicon PiN diode, which are connected in parallel. The Schottky barrier diode and the silicon PiN diode are provided in the form of separate chips. A circuit system is also provided wherein a diode having a Schottky junction of a compound semiconductor as a rectification element built therein is combined, and a relationship, R2>4L/C, with impedance R (resistance), L (inductance), and C (capacitance) determined by a closed circuit between a power source and a positive or negative terminal when the current of the diode becomes zero during recovery operation, is satisfied.

摘要翻译： 电路装置包括与开关元件并联连接的至少一个开关元件和续流二极管。 续流二极管由肖特基势垒二极管构成，其使用具有大于硅的带隙作为其基底的半导体材料以及并联连接的硅PiN二极管。 肖特基势垒二极管和硅PiN二极管以单独的芯片的形式提供。 还提供了一种电路系统，其中组合了具有构成其中的整流元件的化合物半导体的肖特基结的二极管，并且具有阻抗R（电阻），L（电感）和C的关系R 2> 4L / C （电容）由二极管的电流在恢复动作期间变为零时由电源与正极或负极之间的闭合决定。

公开(公告)号：US20080122497A1

公开(公告)日：2008-05-29

申请号：US12019032

申请日：2008-01-24

申请人： Katsumi ISHIKAWA ,  Masahiro Nagasu ,  Dai Tsugawa

发明人： Katsumi ISHIKAWA ,  Masahiro Nagasu ,  Dai Tsugawa

IPC分类号： H03B1/00

CPC分类号： H03K17/567 ,  H03K17/163 ,  H03K17/168 ,  H03K2217/0036

摘要： A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

摘要翻译： 本发明的目的是减少振荡等引起的噪声，同时降低元件的导通功率损耗并且在具有小恢复的SiC二极管的功率半导体元件的开关电路中的二极管的反向恢复损耗 电流并联。 解决该问题的手段是基于检测值来检测功率半导体开关元件的栅极电压和/或集电极电压并且以几个阶段改变栅极驱动电压。

公开(公告)号：US07880174B2

公开(公告)日：2011-02-01

申请号：US12030156

申请日：2008-02-12

申请人： Haruka Shimizu ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

发明人： Haruka Shimizu ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

IPC分类号： H01L27/00

CPC分类号： H03K17/16 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M7/003 ,  H03K17/567 ,  H03K17/687 ,  H03K17/732 ,  H03K17/74 ,  H03K2217/0036 ,  H01L2924/00014 ,  H01L2924/00

摘要： An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.

摘要翻译： 本发明的目的是减少现有转换电路的传导损耗，同时抑制其噪声。 本发明通常是包括与开关装置并联连接的至少一个开关装置和续流二极管的电路装置。 续流二极管通过将硅PiN二极管与使用具有比硅更宽的带隙的半导体材料作为基材的肖特基势垒二极管并联形成。 硅PiN二极管和肖特基势垒二极管是分离的芯片。

公开(公告)号：US20080258252A1

公开(公告)日：2008-10-23

申请号：US12030156

申请日：2008-02-12

申请人： Haruka Shimizu ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

发明人： Haruka Shimizu ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

IPC分类号： H01L27/00

CPC分类号： H03K17/16 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M7/003 ,  H03K17/567 ,  H03K17/687 ,  H03K17/732 ,  H03K17/74 ,  H03K2217/0036 ,  H01L2924/00014 ,  H01L2924/00

摘要： An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.

摘要翻译： 本发明的目的是减少现有转换电路的传导损耗，同时抑制其噪声。 本发明通常是包括与开关装置并联连接的至少一个开关装置和续流二极管的电路装置。 续流二极管通过将硅PiN二极管与使用具有比硅更宽的带隙的半导体材料作为基材的肖特基势垒二极管并联形成。 硅PiN二极管和肖特基势垒二极管是分离的芯片。