公开(公告)号：US08936999B2

公开(公告)日：2015-01-20

申请号：US13341057

申请日：2011-12-30

申请人： Keiichi Sekiguchi ,  Kazuya Hanaoka ,  Daigo Ito

发明人： Keiichi Sekiguchi ,  Kazuya Hanaoka ,  Daigo Ito

IPC分类号： H01L21/84 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L21/02024 ,  H01L21/0206 ,  H01L21/76254 ,  H01L29/78603

摘要： An SOI substrate including a semiconductor layer whose thickness is even is provided. According to a method for manufacturing the SOI substrate, the semiconductor layer is formed over a base substrate. In the method, a first surface of a semiconductor substrate is polished to be planarized; a second surface of the semiconductor substrate which is opposite to the first surface is irradiated with ions, so that an embrittled region is formed in the semiconductor substrate; the second surface is attached to the base substrate, so that the semiconductor substrate is attached to the base substrate; and separation in the embrittled region is performed. The value of 3σ (σ denotes a standard deviation of thickness of the semiconductor layer) is less than or equal to 1.5 nm.

摘要翻译： 提供了包括厚度均匀的半导体层的SOI衬底。 根据SOI基板的制造方法，在基底基板上形成半导体层。 在该方法中，半导体衬底的第一表面被抛光以被平面化; 半导体衬底的与第一表面相对的第二表面被离子照射，从而在半导体衬底中形成脆化区域; 所述第二表面附接到所述基底基板，使得所述半导体基板被附接到所述基底基板; 并进行脆化区域的分离。 3＆sgr的价值 （＆sgr;表示半导体层的厚度的标准偏差）小于或等于1.5nm。

公开(公告)号：US20050282387A1

公开(公告)日：2005-12-22

申请号：US10517149

申请日：2003-06-06

申请人： Takashi Sato ,  Ayako Nishioka ,  Daigo Ito

发明人： Takashi Sato ,  Ayako Nishioka ,  Daigo Ito

IPC分类号： C09G1/02 ,  C09G1/08 ,  C09K3/14 ,  C09K13/00 ,  C23F3/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/461

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/3212

摘要： A metal polish composition contains an amine represented by general formula (1): wherein m represents an integer of from 1 to 3 and n represents an integer of from 0 to 2, with m and n being such that (3-n-m) is an integer of from 0 to 2; A represents a straight-chained or branched alkylene, phenylene or substituted phenylene group having 1 to 5 carbon atoms; R1 and R3 each independently represent hydrogen or a substituted or non-substituted hydrocarbon group having 1 to 5 carbon atoms; R3 represents a substituted or non-substituted hydrocarbon group having 1 to 20 carbon atoms; a combination of R1 and R2, a combination of R2 and R3 and a combination of A and R3 can form a ring structure; and R1, R2, R3 and A can individually form a ring structure.

摘要翻译： 金属抛光组合物含有由通式（1）表示的胺：其中m表示1至3的整数，n表示0至2的整数，m和n使得（3-nm）为 从0到2的整数; A表示具有1至5个碳原子的直链或支链亚烷基，亚苯基或取代亚苯基; R 1和R 3各自独立地表示氢或具有1至5个碳原子的取代或未取代的烃基; R3表示碳原子数1〜20的取代或未取代的烃基; R1和R2的组合，R2和R3的组合以及A和R3的组合可以形成环结构; 并且R1，R2，R3和A可以单独形成环结构。

公开(公告)号：US20140054496A1

公开(公告)日：2014-02-27

申请号：US13985094

申请日：2012-01-31

申请人： Mitsuru Hanasaki ,  Kazunari Fukase ,  Daigo Ito

发明人： Mitsuru Hanasaki ,  Kazunari Fukase ,  Daigo Ito

IPC分类号： H01M4/62

CPC分类号： H01M4/622 ,  H01M4/13 ,  H01M4/139 ,  H01M10/0525

摘要： Provided is a slurry for lithium ion secondary battery electrodes, which has proper binding properties between active materials and between an active material and a current collector, an electrode using the slurry, and a lithium ion secondary battery using the electrode and having both a high initial discharge capacity and an excellent charge-discharge high-temperature cycle characteristic. The present invention relates to a slurry for lithium ion secondary battery electrodes, which is obtained using a binder for battery electrodes and an active material and has a pH of 3.0 to 6.0. Preferably, the slurry contains a binder for battery electrodes in an amount of 0.2 to 4.0% by mass based on the active material.

摘要翻译： 提供了一种用于锂离子二次电池电极的浆料，其在活性材料之间以及活性材料和集电体之间具有适当的结合性，使用该浆料的电极和使用该电极的锂离子二次电池具有高的初始 放电容量和良好的充放电高温循环特性。 本发明涉及一种锂离子二次电池电极用浆料，其使用电池电极用粘合剂和活性物质，pH为3.0〜6.0。 优选地，浆料含有相对于活性物质为0.2〜4.0质量％的电池电极用粘合剂。

公开(公告)号：US20120178238A1

公开(公告)日：2012-07-12

申请号：US13341057

申请日：2011-12-30

申请人： Keiichi SEKIGUCHI ,  Kazuya HANAOKA ,  Daigo ITO

发明人： Keiichi SEKIGUCHI ,  Kazuya HANAOKA ,  Daigo ITO

IPC分类号： H01L21/30

CPC分类号： H01L21/02024 ,  H01L21/0206 ,  H01L21/76254 ,  H01L29/78603

摘要： An SOI substrate including a semiconductor layer whose thickness is even is provided. According to a method for manufacturing the SOI substrate, the semiconductor layer is formed over a base substrate. In the method, a first surface of a semiconductor substrate is polished to be planarized; a second surface of the semiconductor substrate which is opposite to the first surface is irradiated with ions, so that an embrittled region is formed in the semiconductor substrate; the second surface is attached to the base substrate, so that the semiconductor substrate is attached to the base substrate; and separation in the embrittled region is performed. The value of 3σ (σ denotes a standard deviation of thickness of the semiconductor layer) is less than or equal to 1.5 nm.

摘要翻译： 提供了包括厚度均匀的半导体层的SOI衬底。 根据SOI基板的制造方法，在基底基板上形成半导体层。 在该方法中，半导体衬底的第一表面被抛光以被平面化; 半导体衬底的与第一表面相对的第二表面被离子照射，从而在半导体衬底中形成脆化区域; 所述第二表面附接到所述基底基板，使得所述半导体基板被附接到所述基底基板; 并进行脆化区域的分离。 3＆sgr的价值 （＆sgr;表示半导体层的厚度的标准偏差）小于或等于1.5nm。