Abstract:
A crystal constituting a dielectric porcelain, comprised of a first crystal group composed of crystal grains of 0.2 atomic % or less calcium concentration and a second crystal group composed of crystal grains of 0.4 atomic % or more calcium concentration, wherein the ratio of concentration of each of magnesium and a first rare earth element contained in a center portion to that contained in a surface layer portion of crystal grains constituting the first crystal group is greater than the corresponding concentration ratio of crystal grains constituting the second crystal group, and wherein on a polished surface resulting from polishing of the surface of the dielectric porcelain, when the area of crystal grains of the first crystal group is referred to as a and the area of crystal grains of the second crystal group referred to as b, the ratio of b/(a+b) is in the range of 0.5 to 0.8.
Abstract translation:构成电介质瓷的晶体,由由0.2质量%以下钙浓度的晶粒构成的第一晶体组和由钙浓度为0.4原子%以上的晶粒构成的第二晶体组成,其中, 的镁和包含在构成第一晶体组的晶粒的表层部分中的部分的中心部分的第一稀土元素大于构成第二晶体基团的晶粒的相应浓度比,并且其中在抛光 当第一晶体组的晶粒的面积被称为a,第二晶体组织的晶粒面积被称为b时,由电介质陶瓷的表面的抛光产生的表面,b /( a + b)在0.5〜0.8的范围内。
Abstract:
A dielectric ceramic includes crystal grains containing barium titanate as a main component, magnesium, a rare-earth element, and manganese, wherein the crystal grains have a cubic crystal structure; and the dielectric ceramic contains, per mole of barium, 0.033 to 0.085 mol of magnesium in terms of MgO, 0.1 to 0.2 mol of the rare-earth element (RE) in terms of RE2O3, and 0.006 to 0.018 mol of manganese in terms of MnO. Such a dielectric ceramic has a high relative dielectric constant, stable temperature characteristic of the relative dielectric constant, and no spontaneous polarization.
Abstract translation:介电陶瓷包括含有钛酸钡作为主要成分的晶体,镁,稀土元素和锰,其中晶粒具有立方晶体结构; 并且电介质陶瓷每摩尔钡含有以MgO计的0.033至0.085摩尔的镁,以RE 2 O 3计的稀土元素(RE)为0.1至0.2摩尔,以及以TiO 2换算为0.006至0.018摩尔的锰 MnO。 这种介电陶瓷具有高的相对介电常数,相对介电常数的稳定的温度特性,并且没有自发的极化。
Abstract:
There are provided upper and lower switching elements 1U to 1W and 2U to 2W for energizing motor drive windings 4U to 4W, a control circuit 20 that starts outputting a control signal for energization based on an energization instruction, pre-drive circuits 8U to 8W and 9U to 9W for controlling ON/OFF of the upper and lower switching elements based on the control signal, and short circuit detection circuits 10U to 10W for detecting short circuits in a node 14 between the upper and lower switching elements to higher-potential and lower-potential power sources based on the control signal and a voltage of the node. The short circuit detection circuits are controlled to detect a short circuit in the node to the lower-potential power source with all the upper switching elements turned ON and all the lower switching elements turned OFF and to detect a short circuit in the node to the higher-potential power source with all the upper switching elements turned OFF and all the lower switching elements turned ON, in a state where the motor drive windings are not energized. It is possible to prevent a situation in which a short circuit cannot be detected depending on a resistance component of a drive target.
Abstract:
Manufacturing is carried out while including the steps of: from a trunk line 12, drawing out electric wires 13a to be a branch line 14 longer than a required length of the branch line 14; forming a branch line portion 17 by applying tape winding to the drawn-out electric wires 13a; making, as a trunk line accompanying part 17a, a part from a base end P2 to a branching position P1 of the branch line portion 17 accompany the trunk line 12 and making, as a main branch line part 17b, a part from the branching position P1 to a front end P3 of the branch line portion 17 distant from the branch line 12; and applying an protecting treatment 19 by tape winding to the whole.
Abstract:
A dielectric ceramic whose primary crystal grains 1 comprise a composite oxide composed mainly of Ti and at least one kind of alkaline earth metal element selected from Ca, Sr and Ba. The primary crystal grains 1 contain the metal compositions of Mg, Mn and a rare earth element. At least one kind of metal composition of the Mg, the Mn and the rare earth element is present at a higher concentration on the surface side 5 of the primary crystal grains 1 than the inside 3 thereof. A 0.04 to 0.2 parts by mass of Zr in terms of oxide to 100 parts by mass of the composite oxide is contained. It is therefore able to impart a high dielectric constant even to finely granulated barium titanate based crystal grains, and also stabilize the temperature characteristics of dielectric constant.
Abstract:
A layout design apparatus that limits the maximum wiring density and the maximum edge length of partial regions when determining wiring layout. After determining the wiring layout, the layout design apparatus inserts a dummy into a partial region having a low wiring density and thereby, the minimum wiring density and the minimum edge length of the partial regions are limited. Thus, the respective wiring densities and respective edge lengths of the partial regions are constrained within a constant range and irregularities in the substrate surface after polishing can be suppressed.
Abstract:
An engine exhaust gas purifier includes: an injection controller allowing a fuel injection valve to inject fuel near the top dead center on each compression stroke; an EGR amount controller for controlling the amount of exhaust gas recirculated into a combustion chamber; an excess air ratio controller for controlling the excess air ratio so that the local equivalence ratio in a late combustion stage is lower than the equivalence ratio at which soot is produced; and an intake air temperature controller for controlling the temperature of intake air after being mixed with exhaust gas. The intake air temperature controller controls the temperature of intake air within a temperature range lower than an upper temperature limit below which a predetermined ignition delay time can be secured and higher than a lower temperature limit above which the production of HC and CO can be avoided.
Abstract:
A film thickness predicting apparatus compares a measurement value of a copper plating formed on wiring grooves of various patterns measured using a TEG and a film thickness of the copper plating calculated based on a plating model and a condition file. The film thickness predicting apparatus then delivers optimal plating model from the comparison result and calculates the film thickness of the copper plating formed on a substrate surface to be designed using the optimal plating model. The film thickness predicting apparatus enables to conduct a highly accurate film thickness predicting simulation.
Abstract:
A scale inhibition method for injecting an alkaline agent and a chelating agent into a fluid containing at least silica and calcium ions, and inhibiting generation of scale, includes feeding the chelating agent and the alkaline agent into piping channeling the fluid, mixing the fluid while causing the fluid to flow in a chemical-mixing part provided in the piping, and when either a pressure difference between the pressures or a flow rate difference between the rates of fluid flow at an inlet and an outlet of the chemical-mixing part exceeds a preset upper threshold, increasing the amount of the chelating agent fed, and feeding the chelating agent at an increased feed amount until the pressure difference or flow rate difference falls below a preset lower threshold.
Abstract:
A polishing estimation/evaluation device includes a dividing unit, an overpolished area extracting unit, and a dummy modifying unit. The dividing unit divides a layout of an integrated circuit into a plurality of partial areas. The overpolished area extracting unit refers to an overpolishing condition indicating whether overpolishing occurs in a vicinity of a partial area based on a wiring density in the partial area and a wiring density in surrounding areas of the partial area, and extracts a partial area where the overpolishing occurs from the plurality of partial areas obtained by the division by the dividing unit. The dummy modifying unit modifies dummy wiring in the partial area where the overpolishing occurs extracted by the overpolished area extracting unit and/or dummy wiring in surrounding areas of the partial area to reduce the number of partial areas where the overpolishing occurs.