Abstract:
An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second die (18) include either a Surface Acoustic Wave (SAW) resonator or a Bulk Acoustic Wave (BAW) resonator, wherein one of the resonators is configured as a series resonator (12) of the acoustic wave filter (10) and the other resonator is configured as a shunt resonator (14) of the acoustic wave filter (10).
Abstract:
An inductive element for impedance matching comprises an acoustic wave propagating substrate and an acoustic wave transducer coupled to the acoustic wave propagating substrate. The acoustic wave transducer has an effective length L.sub.eff such that Le.sub.eff .gtoreq.C.sub.2 v.sub.a /f.sub.o k.sup.2, where C.sub.2 is a numerical factor such that C.sub.2 .gtoreq.2, v.sub.a represents an acoustic velocity, f.sub.o represents an acoustic wave transducer center frequency and k.sup.2 denotes an acoustic wave propagating substrate electromechanical coupling coefficient. Reflecting elements are provided on the substrate in the principal acoustic propagation directions to form a resonant acoustic cavity. The device exhibits inductive impedance and high Q over a significant frequency range in small physical size.
Abstract:
A surface acoustic wave (SAW) device package for reducing insertion loss and direct RF feedthrough of the SAW device is disclosed. The package provides for extensive shielding of each of the input and output pads. The inputs and outputs to the SAW device are separated by maintaining the inputs on one surface of the substrate and the outputs on the opposite surface of the substrate. The SAW crystal substrate including the SAW devices is bonded to the package substrate and the package is hermetically sealed via a low-temperature glass seal or solder-type sealing, for example.
Abstract:
A method for microelectronic device encapsulation is described comprising steps of providing a microelectronic device (e.g., a surface acoustic wave device) having interconnection contacts disposed thereon and depositing a passivation layer over the microelectronic device and the interconnection contacts. The method further comprises steps of providing alternating current coupled electrodes positioned on the passivation layer and over the interconnection contacts, providing a base substrate (including pressure contact electrodes and vias) and bonding the base substrate to the microelectronic device with a bonding agent for providing a mechanical bond between the microelectronic device and the base and for providing a hermetically sealed environment for the microelectronic device. The method further comprises providing electrical coupling between the pressure contact electrodes and the alternating current coupled electrodes. This method realizes compact microelectronic device packages which can be mass produced from entire microelectronic device substrate.
Abstract:
An acoustic transducer for an acoustic wave device which includes an acoustic wave propagating substrate, the transducer adapted to couple to an electrical load and/or source. The transducer includes at least a pair of comb electrodes formed on the substrate. It includes apparatus for applying an electrical load and/or source across the pair of comb electrodes. The first of the combs has a plurality of electrode fingers. The second comb has at least one electrode finger. The widths of the electrode fingers are the same. Gaps of at least two different widths are disposed between the electrodes.
Abstract:
An exemplary system and method for providing an acoustic plate wave apparatus is disclosed as comprising inter alia: a monocrystalline silicon substrate (200); an amorphous oxide material (220); a monocrystalline perovskite oxide material (230); a monocrystalline piezoelectric material (240); and a flexural plate wave component (250, 270) having an input interdigitated transducer (270), an output interdigitated transducer (250) and an optional support layer (260). Deposition or removal of material on or from an absorptive thin film sensor surface (210), or changes in the mechanical properties of the thin film (210) in contact with various chemical species, or changes in the electrical characteristics of a solvent solution exposed to the thin film (210) generally operate to produce measurable perturbations in the vector quantities (e.g., velocity, etc.) and scalar quantities (e.g., attenuation, etc.) of the acoustic plate modes.
Abstract:
A piezoelectric substrate (120) and a method for preparing same. The method includes steps of (i) providing a boule of piezoelectric material, (ii) orienting the boule to Euler angles chosen to provide a boundary condition matched to a partially-metallized surface and (iii) sawing the boule into at least a first slice (120) having first and second surfaces, at least one of the first and second surfaces comprising a planar surface. The method desirably but not essentially further includes steps of (iv) polishing at least one of the first and second surfaces to provide a substantially planar polished surface, (v) disposing a layer of metal on the at least one of the first and second surfaces and (vi) patterning the layer of metal to provide at least one interdigitated pattern (105, 110) comprising an acoustic wave transducer (105, 110), the acoustic wave transducer (105, 110) providing the boundary condition matched to a partially-metallized surface.
Abstract:
An acoustic wave resonator filter (10) provides series and shunt resonator elements (22, 24) in a ladder network. The series elements (22) are configured in a lowpass configuration. The shunt elements (24) act as impedance inverters in a passband of the filter and they series resonate at an antiresonant frequency of the series elements (22) in a stopband which provides additional isolation. The electrodes (14) of the elements (22, 24) are of a metal thickness which improve the losses of a series resonant frequency in a passband which improves insertion loss. However, any increase in loss near the antiresonant frequency is compensated by the reduced loss near the resonant frequency of the shunt elements (24). The lowpass configuration and the aligned series element antiresonant frequency and shunt element resonant frequency provides good insertion loss, good isolation between transmitting and receiving bands, and maintains good stopband characteristics while reducing the number of elements required for the ladder network.
Abstract:
An acoustic wave filter (200, 300) having a substrate for supporting propagation of acoustic waves, and first (220, 315), second (235, 330) and third (210, 310) acoustic wave transducers disposed on the substrate. The first acoustic wave transducer (220, 315) includes at least one bus bar (221, 316) electrically coupled to a first electrical port (205, 305) of the acoustic wave filter (200, 300). The second acoustic wave transducer (235, 330) is disposed on the substrate in line with the first acoustic wave transducer (220, 315) and is acoustically coupled thereto. The second acoustic wave transducer (235, 330) includes at least one bus bar (236', 331) electrically coupled to a second electrical port (240, 345) of the acoustic wave filter (200, 300). The third acoustic wave transducer (210, 310) includes at least one bus bar (211, 311') electrically coupled to the first electrical port (205, 305). The third acoustic wave transducer (210, 310) is acoustically decoupled from either the first (220, 315) or second (235, 330) acoustic wave transducers.
Abstract:
A multi-bandwidth SAW filter for an input signal is provided which includes an SAW transducer having a selectable length corresponding to the desired bandwidth of the filter. The SAW filter is responsive to a control signal which corresponds to a selectable bandwidth of the filter to present the input signal to an appropriately lengthed SAW transducer.