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    LAYER TRANSFER OF LOW DEFECT SiGe USING AN ETCH-BACK PROCESS
    1.
    发明申请
    LAYER TRANSFER OF LOW DEFECT SiGe USING AN ETCH-BACK PROCESS 失效

    公开(公告)号：US20090267052A1

    公开(公告)日：2009-10-29

    申请号：US12181613

    申请日：2008-07-29

    申请人： Jack Oon Chu ,  David R. DiMilia ,  Lijuan Huang

    发明人： Jack Oon Chu ,  David R. DiMilia ,  Lijuan Huang

    IPC分类号： H01L29/12

    CPC分类号： H01L21/76256 ,  H01L21/2007

    摘要： A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

    Layer transfer of low defect SiGe using an etch-back process
    3.
    发明授权
    Layer transfer of low defect SiGe using an etch-back process 失效
    使用回蚀工艺对低缺陷SiGe进行层传输

    公开(公告)号：US07786468B2

    公开(公告)日：2010-08-31

    申请号：US12181613

    申请日：2008-07-29

    申请人： Jack O. Chu ,  David R. DiMilia ,  Lijuan Huang

    发明人： Jack O. Chu ,  David R. DiMilia ,  Lijuan Huang

    IPC分类号： H01L29/737

    CPC分类号： H01L21/76256 ,  H01L21/2007

    摘要： A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

    摘要翻译： 描述了在半导体衬底上增长的外延Si1-yGey层，通过Chemo-Mechanical Polishing平滑表面，通过热粘合将两个衬底粘合在一起，在绝缘体上松弛的SiGe（SiO）或Si异质结构上的SiGe上形成应变Si或SiGe的方法 处理并通过使用SiGe本身作为蚀刻停止的高选择性蚀刻将SiGe层从一个衬底转移到另一个衬底。 转移的SiGe层可以通过CMP平滑CMP，用于外延沉积弛豫Si1-yGey，并且应变Si1-yGey取决于组成，应变Si，应变SiC，应变Ge，应变GeC和应变Si1-yGeyC或重度 掺杂层以形成SiGe / Si异质结二极管的电接触。

    LAYER TRANSFER OF LOW DEFECT SiGe USING AN ETCH-BACK PROCESS
    4.
    发明申请
    LAYER TRANSFER OF LOW DEFECT SiGe USING AN ETCH-BACK PROCESS 审中-公开
    使用回流过程的低缺陷SiGe的层传输

    公开(公告)号：US20090026495A1

    公开(公告)日：2009-01-29

    申请号：US12181489

    申请日：2008-07-29

    申请人： Jack Oon Chu ,  David R. DiMilia ,  Lijuan Huang

    发明人： Jack Oon Chu ,  David R. DiMilia ,  Lijuan Huang

    IPC分类号： H01L29/161

    CPC分类号： H01L21/76256 ,  H01L21/2007

    摘要： A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

    摘要翻译： 描述了在半导体衬底上增长的外延Si1-yGey层，通过Chemo-Mechanical Polishing平滑表面，通过热粘合将两个衬底粘合在一起，在绝缘体上松弛的SiGe（SiO）或Si异质结构上的SiGe上形成应变Si或SiGe的方法 处理并通过使用SiGe本身作为蚀刻停止的高选择性蚀刻将SiGe层从一个衬底转移到另一衬底。 转移的SiGe层可以通过CMP平滑CMP，用于外延沉积弛豫Si1-yGey，并且应变Si1-yGey取决于组成，应变Si，应变SiC，应变Ge，应变GeC和应变Si1-yGeyC或重度 掺杂层以形成SiGe / Si异质结二极管的电接触。

    Layer transfer of low defect SiGe using an etch-back process
    6.
    发明授权
    Layer transfer of low defect SiGe using an etch-back process 有权
    使用回蚀工艺对低缺陷SiGe进行层传输

    公开(公告)号：US07427773B2

    公开(公告)日：2008-09-23

    申请号：US10948421

    申请日：2004-09-23

    申请人： Jack Oon Chu ,  David R. DiMilia ,  Lijuan Huang

    发明人： Jack Oon Chu ,  David R. DiMilia ,  Lijuan Huang

    IPC分类号： H01L29/737

    CPC分类号： H01L21/76256 ,  H01L21/2007

    摘要： A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1−yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1−yGey, and strained Si1−yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1−yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

    摘要翻译： 描述了在松散的SiGe绝缘体上（SGOI）上形成应变Si或SiGe的方法或Si异质结构上的SiGe的方法，该方法包括生长外延Si 1-y Ge层 半导体衬底，通过化学机械抛光的平滑表面，通过热处理将两个衬底结合在一起，并且通过使用SiGe本身作为蚀刻停止层的高选择性蚀刻将SiGe层从一个衬底转移到另一衬底。 转移的SiGe层可以通过CMP平滑其上表面，用于外延沉积弛豫的Si 1-y Ge y Si，并且应变Si 1-y

    Scanning heat flow probe
    8.
    发明授权
    Scanning heat flow probe 失效
    扫描热流探头

    公开(公告)号：US06866415B2

    公开(公告)日：2005-03-15

    申请号：US10348541

    申请日：2003-01-21

    申请人： Steven Alan Cordes ,  David R. DiMilia ,  James Patrick Doyle ,  Matthew James Farinelli ,  Snigdha Ghoshal ,  Uttam Shyamalindu Ghoshal ,  Chandler Todd McDowell ,  Li Shi

    发明人： Steven Alan Cordes ,  David R. DiMilia ,  James Patrick Doyle ,  Matthew James Farinelli ,  Snigdha Ghoshal ,  Uttam Shyamalindu Ghoshal ,  Chandler Todd McDowell ,  Li Shi

    IPC分类号： G01K17/20 ,  G01K17/00 ,  G01K15/00

    CPC分类号： G01K17/20

    摘要： A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

    摘要翻译： 提供了一种扫描热流探头，用于对通过被测器件的热流进行定量测量。 在一个实施例中，扫描热流探针包括连接到探针尖端并耦合到两个电压表引线的悬臂梁中的电流导体。 探头还包括与电流导体和两个电压表引线电隔离的悬臂梁中的两个热电偶接头。 仅使用电压和电流测量定量地导出热流。 在其他形式中，本发明涉及通过涉及互连的探针的方法来校准扫描热流探针，并且涉及通过探针结构设计实践来最小化热流测量不确定性。

    Scanning heat flow probe and the method of fabricating the same
    10.
    发明授权
    Scanning heat flow probe and the method of fabricating the same 失效
    扫描热流探头及其制造方法

    公开(公告)号：US06652139B2

    公开(公告)日：2003-11-25

    申请号：US10348532

    申请日：2003-01-21

    申请人： Steven Alan Cordes ,  David R. DiMilia ,  James Patrick Doyle ,  Matthew James Farinelli ,  Snigdha Ghoshal ,  Uttam Shyamalindu Ghoshal ,  Chandler Todd McDowell ,  Li Shi

    发明人： Steven Alan Cordes ,  David R. DiMilia ,  James Patrick Doyle ,  Matthew James Farinelli ,  Snigdha Ghoshal ,  Uttam Shyamalindu Ghoshal ,  Chandler Todd McDowell ,  Li Shi

    IPC分类号： G01K1708

    CPC分类号： G01K17/20

    摘要： A method of fabricating a scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. The invention also relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

    摘要翻译： 提供了一种制造用于对通过被测器件的热流进行定量测量的扫描热流探针的方法。 在一个实施例中，扫描热流探针包括连接到探针尖端并耦合到两个电压表引线的悬臂梁中的电流导体。 探头还包括与电流导体和两个电压表引线电隔离的悬臂梁中的两个热电偶接头。 仅使用电压和电流测量定量地导出热流。 本发明还涉及通过涉及互连探头的方法来校准扫描热流探针，并且涉及通过探针结构设计实践来最小化热流测量不确定性。