公开(公告)号：US20070057255A1

公开(公告)日：2007-03-15

申请号：US11595936

申请日：2006-11-13

Applicant: Christopher Murray ,  Elena Shevchenko ,  Dmitri Talapin

Inventor： Christopher Murray ,  Elena Shevchenko ,  Dmitri Talapin

IPC: H01L51/00 ,  H01L21/00

CPC classification number: H04W8/18

Abstract: Nanoparticles coated with tetrazole and methods for preparing them are provided. The nanoparticles can be coated onto a substrate and used in fabricating devices such as field effect transistors, switches, sensors, solar cells and spring exchange magnets.

Abstract translation: 提供用四唑包被的纳米颗粒及其制备方法。 纳米颗粒可以涂覆在基底上，并用于制造诸如场效应晶体管，开关，传感器，太阳能电池和弹簧交换磁体的器件。

公开(公告)号：US07208133B2

公开(公告)日：2007-04-24

申请号：US10994944

申请日：2004-11-22

Applicant: Kyung-Sang Cho ,  Wolfgang Gaschler ,  Christopher B. Murray ,  Dmitri Talapin

Inventor： Kyung-Sang Cho ,  Wolfgang Gaschler ,  Christopher B. Murray ,  Dmitri Talapin

IPC: C01B19/00 ,  C01B17/00 ,  C01G17/00 ,  C01G21/00 ,  C01G19/00

CPC classification number: C01G21/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2004/04 ,  C01P2004/32 ,  C01P2004/38 ,  C01P2004/64 ,  C09K11/881 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/813 ,  Y10S977/814

Abstract: A high temperature non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles is provided. The procedure includes introducing a first precursor selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element into a reaction vessel that comprises at least an organic solvent to form a mixture. Next, the mixture is heated and thereafter a second precursor of a molecular precursor of a Group IV element or a molecular precursor of a Group VI element that is different from the first is added. The reaction mixture is then mixed to initiate nucleation of IV-VI nanocrystals and the temperature of the reaction mixture is controlled to provide nanoparticles having a diameter of about 20 nm or less.

Abstract translation: 提供用于制备基本上单分散IV-VI半导体纳米颗粒的高温非水合成方法。 该方法包括将选自由IV族元素的分子前体和VI族元素的分子前体组成的组的第一种前体引入包含至少一种有机溶剂以形成混合物的反应容器中。 接下来，加热混合物，然后加入第IV族元素的分子前体的第二前体或与第一元素不同的第VI族元素的分子前体。 然后将反应混合物混合以引发IV-VI纳米晶体的成核，并控制反应混合物的温度以提供直径为约20nm或更小的纳米颗粒。

公开(公告)号：US20060105523A1

公开(公告)日：2006-05-18

申请号：US10991582

申请日：2004-11-18

Applicant: Ali Afzali-Ardakani ,  Phaedon Avouris ,  Jia Chen ,  Christian Klinke ,  Christopher Murray ,  Dmitri Talapin

Inventor： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Jia Chen ,  Christian Klinke ,  Christopher Murray ,  Dmitri Talapin

IPC: H01L21/336

CPC classification number: H01L21/22 ,  B82Y10/00 ,  H01L51/002 ,  H01L51/0048 ,  Y10S977/742 ,  Y10S977/938

Abstract: A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.

公开(公告)号：US20070251996A1

公开(公告)日：2007-11-01

申请号：US11411716

申请日：2006-04-26

Applicant: Dimitri Kanevsky ,  Dmitri Talapin

Inventor： Dimitri Kanevsky ,  Dmitri Talapin

IPC: G06K5/00

CPC classification number: G07C9/00158 ,  A61B5/1172

Abstract: An identification verification system includes a combination of indicia that represent measurable characteristics mapped into a characteristic signature, and an indicia detector for detecting the characteristic signature and verifying authenticity of the characteristic signature.

Abstract translation: 识别验证系统包括表示映射到特征签名中的可测量特征的标记的组合，以及用于检测特征签名并验证特征签名的真实性的标记检测器。

公开(公告)号：US20070160747A1

公开(公告)日：2007-07-12

申请号：US11330291

申请日：2006-01-12

Applicant: David Mitzi ,  Christopher Murray ,  Dmitri Talapin

Inventor： David Mitzi ,  Christopher Murray ,  Dmitri Talapin

IPC: B32B19/00 ,  B05D5/12 ,  H01L21/8232 ,  H01L31/00

CPC classification number: H01L31/0324 ,  B82Y30/00 ,  H01L21/0237 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/03529 ,  H01L31/072 ,  Y02E10/50

Abstract: An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrezine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.

Abstract translation: 无机纳米复合材料通过获得可溶性的基于水合物的金属硫属元素前体的溶液来制备; 将纳米颗粒分散在前体溶液中; 将含有纳米级的前体的溶液施加到基底上以产生含有纳米级的前体的膜; 以及退火含有纳米材料的前体的膜以产生包含至少一种金属硫属元素化合物和至少一种分子混合纳米颗粒的金属硫族化物纳米复合材料膜。 该过程可用于制备场效应晶体管和光伏器件。

公开(公告)号：US20060110313A1

公开(公告)日：2006-05-25

申请号：US10994944

申请日：2004-11-22

Applicant: Kyung-Sang Cho ,  Wolfgang Gaschler ,  Christopher Murray ,  Dmitri Talapin

Inventor： Kyung-Sang Cho ,  Wolfgang Gaschler ,  Christopher Murray ,  Dmitri Talapin

IPC: C01G21/21

CPC classification number: C01G21/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2004/04 ,  C01P2004/32 ,  C01P2004/38 ,  C01P2004/64 ,  C09K11/881 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/813 ,  Y10S977/814

Abstract: A high temperature (on the order of about 90° C. or above) non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles (quantum dots) is provided. The procedure includes first introducing a first precursor selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element into a reaction vessel that comprises at least an organic solvent to form a mixture. Next, the mixture is heated to a temperature of about 90° C. or above and thereafter a second precursor which is different from the first precursor and is selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element is added into the heated mixture. The reaction mixture is then mixed to initiate nucleation of IV-VI nanocrystals and the temperature of the reaction mixture is controlled to provide substantially monodispersed IV-VI nanoparticles having a diameter of about 20 nm or less.

Abstract translation: 提供了用于制备基本上单分散IV-VI半导体纳米颗粒（量子点）的高温（约90℃或更高级）的非水合成方法。 该方法包括首先引入选自由IV族元素的分子前体和第VI族元素的分子前体组成的组的第一种前体至少包含有机溶剂以形成混合物的反应容器中。 接下来，将混合物加热至约90℃或更高的温度，然后加热与第一前体不同的第二前体，并且选自第IV族元素的分子前体和分子前体 将VI族元素加入加热的混合物中。 然后将反应混合物混合以引发IV-VI纳米晶体的成核，并控制反应混合物的温度以提供直径为约20nm或更小的基本上单分散的IV-VI纳米颗粒。

公开(公告)号：US20060105513A1

公开(公告)日：2006-05-18

申请号：US11138797

申请日：2005-05-26

Applicant: Ali Afzali-Ardakani ,  Cherie Kagan ,  Christopher Murray ,  Robert Sandstrom ,  Dmitri Talapin

Inventor： Ali Afzali-Ardakani ,  Cherie Kagan ,  Christopher Murray ,  Robert Sandstrom ,  Dmitri Talapin

IPC: H01L21/8234 ,  H01L21/84 ,  H01L21/336 ,  H01L51/40

CPC classification number: H01L29/04 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L29/0673 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0049 ,  H01L51/0545 ,  H01L2251/5369 ,  Y10S977/938

Abstract: A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.

Abstract translation: 公开了一种包括掺杂半导体纳米元件的器件和形成器件的方法。 纳米组分是纳米管，纳米线或纳米晶体膜之一，其可以通过暴露于含有机胺的掺杂剂掺杂。 给出了具有包含铅硒化物纳米线或纳米晶体膜的通道的场效应晶体管的示例性实例以及形成这些器件的方法。