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    Method and system for preventing deposition on an optical component in a spectroscopic sensor
    1.
    发明授权
    Method and system for preventing deposition on an optical component in a spectroscopic sensor 有权
    用于防止在光谱传感器中的光学部件上沉积的方法和系统

    公开(公告)号：US06421127B1

    公开(公告)日：2002-07-16

    申请号：US09613806

    申请日：2000-07-11

    申请人： James J. F. McAndrew ,  Benjamin Jurcik ,  Carol Schnepper ,  Ronald Inman ,  Dmitry Znamensky ,  Tracey Jacksier

    发明人： James J. F. McAndrew ,  Benjamin Jurcik ,  Carol Schnepper ,  Ronald Inman ,  Dmitry Znamensky ,  Tracey Jacksier

    IPC分类号： G01N2103

    CPC分类号： G01J3/42 ,  B08B17/02 ,  G01J3/0259 ,  G01J3/44 ,  G01N21/15 ,  G01N2021/151 ,  G02B27/0006

    摘要： Provided are novel methods of preventing deposition on an optical component in an absorption spectroscopy measurement cell. The methods involve performing an absorption spectroscopy measurement of a sample gas introduced into the cell, and introducing a flow of purge gas from a purge gas inlet pipe across a critical surface of the optical element at a velocity effective to prevent deposition on the critical surface. The gas inlet is disposed adjacent said critical surface. Also provided are devices for practicing the inventive method, measurement cells useful in absorption spectroscopy measurements, apparatuses for performing an absorption spectroscopy measurement and semiconductor processing apparatuses. The invention allows for the performance of accurate spectroscopic measurements. Because deposits are prevented from forming on the surface of an optical element, interference therefrom can effectively be avoided.

    摘要翻译： 提供了防止在吸收光谱测量单元中的光学部件上沉积的新方法。 所述方法包括对导入到电池中的样品气体进行吸收光谱测量，并以有效防止沉积在临界表面上的速度，将来自吹扫气体入口管的净化气体流引导到光学元件的临界表面。 气体入口邻近所述临界表面设置。 还提供了用于实施本发明方法的装置，用于吸收光谱测量的测量单元，用于执行吸收光谱测量的装置和半导体处理装置。 本发明允许进行精确的光谱测量。 由于防止在光学元件的表面上形成沉积物，因此可以有效地避免与其的干涉。

    MULTIPLE PRECURSOR DISPENSING APPARATUS
    2.
    发明申请
    MULTIPLE PRECURSOR DISPENSING APPARATUS 审中-公开
    多前置机配送设备

    公开(公告)号：US20070175392A1

    公开(公告)日：2007-08-02

    申请号：US11621419

    申请日：2007-01-09

    申请人： Dmitry Znamensky

    发明人： Dmitry Znamensky

    IPC分类号： C23C16/00 ,  H01L21/306 ,  B05C11/00

    CPC分类号： C23C16/448 ,  C23C16/45561 ,  C23C16/54

    摘要： An apparatus for dispensing multiple precursors to a manufacturing tool includes a fluidic manifold having a plurality of interconnected sub-manifolds, a plurality of tanks, each tank containing a different precursor, and wherein each of the sub-manifolds is connected to one of the tanks. A system for dispensing multiple precursors to a manufacturing tool includes a multiple precursor dispenser having a fluidic manifold and a plurality of tanks, each tank containing a different precursor and connected to a different sub-manifold of the fluidic manifold, the sub-manifolds being interconnected, a manufacturing tool fluidic processor having a plurality of canisters, each canister containing a different precursor, wherein a first dispenser tank communicates with a first tool canister having the same precursor, and wherein a second dispenser tank communicates with a second tool canister having the same precursor. Related methods are also described herein.

    摘要翻译： 用于将多个前体分配到制造工具的装置包括具有多个互连的子歧管的多个流体歧管，多个罐，每个罐包含不同的前体，并且其中每个子歧管连接到一个罐 。 用于将多个前体分配到制造工具的系统包括具有流体歧管和多个罐的多个前体分配器，每个罐包含不同的前体并连接到流体歧管的不同子歧管，所述子歧管互连 ，具有多个罐的制造工具流体处理器，每个罐包含不同的前体，其中第一分配器罐与具有相同前体的第一工具罐连通，并且其中第二分配器罐与具有相同前体的第二工具罐连通 前体 本文还描述了相关方法。

    Method for rapidly determining an impurity level in a gas source or a gas distribution system
    4.
    发明授权
    Method for rapidly determining an impurity level in a gas source or a gas distribution system 失效
    用于快速测定气体源或气体分配系统中的杂质水平的方法

    公开(公告)号：US5714678A

    公开(公告)日：1998-02-03

    申请号：US757752

    申请日：1996-11-26

    申请人： Benjamin Jurcik ,  James McAndrew ,  Dmitry Znamensky

    发明人： Benjamin Jurcik ,  James McAndrew ,  Dmitry Znamensky

    IPC分类号： G01N27/62 ,  G01N1/00 ,  G01N33/00 ,  G01N7/00

    CPC分类号： G01N33/0004

    摘要： Provided is a novel method for rapidly determining an impurity level in a gas source. A gas source and a measurement tool are provided for measuring an impurity level in a gas flowing from the gas source. The measurement tool is in communication with the gas source through a sampling line. The sampling line has a gas inlet disposed upstream from a gas outlet. The sampling line is baked according to a baking strategy, such that when baking is terminated, a concentration profile of the impurity in the sampling line contains a first region and a second region. In the first region, extending from the gas inlet to a point downstream from the inlet, the vapor phase concentration of the impurity is less than the vapor phase concentration of the impurity in the gas entering the sampling line. In the second region, located downstream from the first region and extending to the gas outlet, the vapor phase concentration of the impurity is greater than the vapor phase concentration of the impurity in the gas entering the sampling line. A method for rapidly determining an impurity level in a gas distribution system which delivers gas to a point of use is also provided. Particular applicability is found in the semiconductor processing industry to measure impurities in gases delivered to processing tools.

    摘要翻译： 提供了一种用于快速测定气源中的杂质水平的新方法。 气源和测量工具用于测量从气源流出的气体中的杂质浓度。 测量工具通过采样管与气源连通。 采样管线具有设置在气体出口上游的气体入口。 根据烘烤策略烘烤采样管，使得当烘烤终止时，采样管线中杂质的浓度分布包含第一区域和第二区域。 在从气体入口延伸到入口下游的第一区域中，杂质的气相浓度小于进入采样管线的气体中的杂质的气相浓度。 在位于第一区域下游并延伸到气体出口的第二区域中，杂质的气相浓度大于进入采样管线的气体中的杂质的气相浓度。 还提供了一种用于快速确定将气体输送到使用点的气体分配系统中的杂质水平的方法。 在半导体加工业中发现了特别适用于测量输送到加工工具中的气体中的杂质。