摘要:
An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.
摘要:
An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.
摘要:
The present invention relate to an atomic scale electronic switch wherein the position of one or more atoms (12, 20) or molecules is varied to control the state of the switch. Terminals (10, 11, 21-23) may be tips of scanning tunneling microscopes or STMs. A change in position of the switch will result in a change in conductance between the spaced apart terminals. Voltage or current pulses cause the switching element (12) to change positions.
摘要:
The present invention relates to an atomic scale electronic switch; wherein the position of one or more atoms or molecules is or are varied to control the state of the switch. The switch includes a plurality of fixed terminals approximately separated less than 100 .ANG.. Controlling the state of the switch is accomplished by applying a voltage or current to the terminals, thereby moving at least one atoms toward a desired terminal.
摘要:
A method and structure in which an adsorbate atom or molecule is repositioned on a substrate surface by moving the tip of an STM to a position adjacent to the atom to be moved and causing the atom to be attracted to the tip. While the atom remains bound to the surface (or, alternatively, is lifted), the tip is moved laterally to drag (or carry) the atom to a desired position at which it is bound to the surface.The atom may be repositioned in close proximity to an atom of the same or another type on the same or a different substrate to create a desired multi-atom structure or synthesize a molecule, or an atom may be removed to cleave a multi-atom structure, or a change in state of a multi-atom structure may be effected.Atoms may also be repositioned to write indicia on a storage medium by dragging or carrying atoms into the desired information-bearing pattern, for example, by dragging or carrying selected atoms out of a respective one of a plurality of parallel atom rows using the tip of an STM to thereby write indicia at locations denoted by the removed atoms.
摘要:
A method is disclosed for repositioning an adsorbate atom or molecule on a substrate surface by moving the tip of a STM to a position adjacent the atom to be moved and subsequently increasing the attraction between the tip and atom by moving the tip closer to the substrate, and then, while the atom remains bound to the surface, moving the tip laterally to drag the atom to a desired position on the surface. The tip is then moved away from the substrate, reducing the attraction between the atom and tip and leaving the atom bound at the desired position.The atom may be repositioned in close proximity to an atom of the same or another type on the same or a different substrate to create a desired multi-atom structure or synthesize a molecule.Atoms may also be repositioned to write indicia on a storage medium by dragging atoms into the desired information bearing pattern, for example, by dragging selected atoms out of a respective one of a plurality of parallel atom rows using the tip of a STM to thereby write indicia at locations denoted by the removed atoms.