公开(公告)号：US09633685B2

公开(公告)日：2017-04-25

申请号：US14039044

申请日：2013-09-27

Applicant: Agency for Science, Technology and Research

Inventor： Karthik Kumar ,  Kwang Wei Joel Yang ,  Huigao Duan ,  Mohamed Asbahi

IPC: B05D5/12 ,  H01L21/302 ,  G11B7/0037 ,  G11B7/24035 ,  B82Y10/00 ,  G11B7/005 ,  G11B7/26 ,  G11C13/04 ,  B82Y30/00 ,  G11B5/855 ,  G11B7/1353 ,  G11B7/013 ,  G11B7/2433

CPC classification number: G11B7/0037 ,  B82Y10/00 ,  B82Y30/00 ,  G11B5/855 ,  G11B7/0052 ,  G11B7/1353 ,  G11B7/24035 ,  G11B7/2433 ,  G11B7/26 ,  G11B7/261 ,  G11B7/266 ,  G11B2007/0136 ,  G11C13/048 ,  Y10S977/858 ,  Y10T428/24802

Abstract: According to embodiments of the present invention, a method of writing to an optical data storage medium is provided. The method includes receiving a plurality of data elements, each data element having one of a plurality of values, wherein each value of the plurality of values is associated with a wavelength, and forming, for each data element, a nanostructure arrangement on the optical data storage medium, the nanostructure arrangement configured to reflect light of the wavelength associated with the value of the data element in response to a light irradiated on the optical data storage medium. According to further embodiments of the present invention, a method of reading from an optical data storage medium and an optical data storage medium are also provided.

公开(公告)号：US20120329251A1

公开(公告)日：2012-12-27

申请号：US13490325

申请日：2012-06-06

Applicant: Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Jiangtao Hu

Inventor： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Jiangtao Hu

IPC: H01L21/20 ,  B82Y40/00

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US08153470B2

公开(公告)日：2012-04-10

申请号：US11543337

申请日：2006-10-04

Applicant: Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01L51/40

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A method for selectively aligning and positioning semiconductor nanowires on a substrate by providing a substrate; patterning electrodes on a surface of the substrate; conditioning the surface of the substrate to attach semiconductor nanowires to the surface by functionalizing the surface with a first functional group having an affinity for the semiconductor nanowires; providing an environment in contact with the electrodes, the environment having suspended therein the semiconductor nanowires; and providing an electric field between the electrodes, thereby causing the nanowires in the environment to align between and electrically connect the electrodes to thereby form a semiconducting channel between the electrodes.

Abstract translation: 一种用于通过提供衬底在衬底上选择性地对准和定位半导体纳米线的方法; 在基板的表面上构图电极; 通过用对半导体纳米线具有亲和性的第一官能团官能化表面来调节衬底的表面以将半导体纳米线附着到表面上; 提供与电极接触的环境，其中悬浮有半导体纳米线的环境; 并且在电极之间提供电场，从而使环境中的纳米线在电极之间对齐并电连接，从而在电极之间形成半导体通道。

公开(公告)号：US07476596B2

公开(公告)日：2009-01-13

申请号：US11543336

申请日：2006-10-04

Applicant: Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01L21/46

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.

Abstract translation: 体积掺杂半导体，其为以下至少一个：单晶，细长体积掺杂半导体，其沿​​着其纵向轴线的任何点具有小于500纳米的最大横截面尺寸， 具有至少一部分具有小于500纳米的最小宽度的单体和体掺杂半导体。 这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度 小于20纳米，或小于10纳米，甚至小于5纳米。 这样的半导体可以在生长期间被掺杂。 这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组装技术来从这种半导体制造设备。

公开(公告)号：US20080256850A1

公开(公告)日：2008-10-23

申请号：US12152032

申请日：2008-05-10

Applicant: Victor B. Kley

Inventor： Victor B. Kley

IPC: G21C3/07 ,  B05D3/06

CPC classification number: G01Q20/02 ,  G01Q30/02 ,  G01Q30/10 ,  G01Q70/14 ,  G01Q80/00 ,  G21B1/19 ,  Y02E30/16 ,  Y10S977/858 ,  Y10S977/871 ,  Y10S977/879

Abstract: Fuel capsules usable in inertial confinement fusion (ICF) reactors have shells made from materials having a diamond (sp3) lattice structure, including diamond materials in synthetic crystalline, polycrystalline (ordered or disordered), nanocrystalline and amorphous forms. The interior of the shell is filled with a fusion fuel mixture, including any combination of deuterium and/or tritium and/or helium-3 and/or other fusible isotopes.

Abstract translation: 可用于惯性约束熔融（ICF）反应器的燃料胶囊具有由具有金刚石（sp 3 O 3）晶格结构的材料制成的壳，包括合成晶体，多晶（有序或无序）的纳米晶体和无定形的金刚石材料 形式。 壳体的内部填充有聚合燃料混合物，包括氘和/或氚和/或氦-3和/或其它可熔同位素的任何组合。

公开(公告)号：US20070267955A1

公开(公告)日：2007-11-22

申请号：US11688746

申请日：2007-03-20

Applicant: Zvi Yaniv ,  Richard Fink ,  Mohshi Yang ,  Dongsheng Mao

Inventor： Zvi Yaniv ,  Richard Fink ,  Mohshi Yang ,  Dongsheng Mao

IPC: H01J1/304

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/888 ,  Y10S977/939

Abstract: Particles, which may include nanoparticles, are mixed with carbon nanotubes and deposited on a substrate to form a cold cathode. The particles enhance the field emission characteristics of the carbon nanotubes. An additional activation step may be performed on the deposited carbon nanotube mixture to further enhance the emission of electrons.

Abstract translation: 可以包括纳米颗粒的颗粒与碳纳米管混合并沉积在基材上以形成冷阴极。 颗粒增强了碳纳米管的场致发射特性。 可以在沉积的碳纳米管混合物上进行另外的活化步骤，以进一步增强电子的发射。

公开(公告)号：US20070117401A1

公开(公告)日：2007-05-24

申请号：US11370812

申请日：2006-03-08

Applicant: Yunjun Li ,  Richard Fink ,  Mohshi Yang ,  Zvi Yaniv

Inventor： Yunjun Li ,  Richard Fink ,  Mohshi Yang ,  Zvi Yaniv

IPC: H01L21/31

CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J2201/30469 ,  Y10S977/72 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/939

Abstract: Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via printing or stencil printing processes. The CNT ink is dispensed into wells formed in a cathode structure through a stencil.

Abstract translation: 碳纳米管（CNT）的组成通过印刷或模版印刷工艺生产成不需要的油墨。 将CNT墨水通过模板分配到阴极结构中形成的阱中。

公开(公告)号：US07195938B2

公开(公告)日：2007-03-27

申请号：US10269577

申请日：2002-10-11

Applicant: Zvi Yaniv ,  Richard Lee Fink ,  Mohshi Yang ,  Dongsheng Mao

Inventor： Zvi Yaniv ,  Richard Lee Fink ,  Mohshi Yang ,  Dongsheng Mao

IPC: H01L51/00 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/888 ,  Y10S977/939

Abstract: Particles, which may include nanoparticles, are mixed with carbon nanotubes and deposited on a substrate to form a cold cathode. The particles enhance the field emission characteristics of the carbon nanotubes. An additional activation step may be performed on the deposited carbon nanotube mixture to further enhance the emission of electrons.

Abstract translation: 可以包括纳米颗粒的颗粒与碳纳米管混合并沉积在基材上以形成冷阴极。 颗粒增强了碳纳米管的场致发射特性。 可以在沉积的碳纳米管混合物上进行另外的活化步骤，以进一步增强电子的发射。

公开(公告)号：US20070032023A1

公开(公告)日：2007-02-08

申请号：US11543352

申请日：2006-10-04

Applicant: Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01L21/336

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US06998228B2

公开(公告)日：2006-02-14

申请号：US10179102

申请日：2002-06-25

Applicant: Eric Henderson ,  Curtis Mosher ,  Michael P. Lynch

Inventor： Eric Henderson ,  Curtis Mosher ,  Michael P. Lynch

IPC: C12Q1/68

CPC classification number: G01N33/543 ,  C12Q1/6834 ,  C12Q1/6837 ,  Y10S977/853 ,  Y10S977/858 ,  C12Q2565/601 ,  C12Q2565/501

Abstract: The invention is a method for the formation and analysis of novel miniature deposition domains. These deposition domains are placed on a surface to form a molecular array. The molecular array is scanned with an AFM to analyze molecular recognition events and the effect of introduced agents on defined molecular interactions. This approach can be carried out in a high throughput format, allowing rapid screening of thousands of molecular species in a solid state array. The procedures described here have the added benefit of allowing the measurement of changes in molecular binding events resulting from changes in the analysis environment or introduction of additional effector molecules to the assay system. The processes described herein are extremely useful in the search for compounds such as new drugs for treatment of undesirable physiological conditions. The method and apparatus of the present invention does not require the labeling of the deposition material or the target sample and may also be used to deposit large size molecules without harming the same.