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    GROUND ANTENNA AND GROUND RADIATOR USING CAPACITOR
    1.
    发明申请
    GROUND ANTENNA AND GROUND RADIATOR USING CAPACITOR 有权
    接地天线和使用电容器的地面散热器

    公开(公告)号：US20140062820A1

    公开(公告)日：2014-03-06

    申请号：US14047008

    申请日：2013-10-06

    Applicant: Hyun Min JANG ,  Hyeng Cheul CHOI ,  Dong Ryeol LEE ,  Yang LIU ,  Hyung Jin LEE ,  Jae Kyu YU

    Inventor： Hyun Min JANG ,  Hyeng Cheul CHOI ,  Dong Ryeol LEE ,  Yang LIU ,  Hyung Jin LEE ,  Jae Kyu YU

    IPC: H01Q1/48

    CPC classification number: H01Q1/48 ,  H01Q1/243 ,  H01Q13/10

    Abstract: By providing a radiator configuration circuit and a feeding circuit each having a simple structure, a ground radiation antenna having a more simplified fabrication process as well as a remarkably reduced fabrication cost is provided herein. Additionally, a ground radiation antenna having an excellent radiation performance, even when one side of a mobile communication terminal is covered with a conductive substance, such as an LCD panel, is also provided herein.

    Abstract translation: 通过提供具有简单结构的散热器配置电路和馈电电路，本文提供了具有更简化的制造工艺以及显着降低的制造成本的地面辐射天线。 此外，即使在移动通信终端的一侧被诸如LCD面板的导电物质覆盖的情况下，也具有优异的辐射性能的地面辐射天线。

    METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE CAPABLE OF IMPROVING THERMAL EFFICIENCY OF PHASE CHANGE MATERIAL
    2.
    发明申请
    METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE CAPABLE OF IMPROVING THERMAL EFFICIENCY OF PHASE CHANGE MATERIAL 审中-公开
    制造可改善相变材料热效率的相变存储器件的方法

    公开(公告)号：US20090117748A1

    公开(公告)日：2009-05-07

    申请号：US12146172

    申请日：2008-06-25

    Applicant: Dong Ryeol LEE ,  Chang Heon PARK ,  Hee Seung SHIN

    Inventor： Dong Ryeol LEE ,  Chang Heon PARK ,  Hee Seung SHIN

    IPC: H01L21/306

    CPC classification number: H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    Abstract: A method for manufacturing a phase change memory device, capable of improving reset current characteristics of a phase change layer by preventing thermal loss of the phase change layer. An interlayer dielectric layer having a lower electrode contact is formed on a semiconductor substrate. A phase change layer and an upper electrode layer are sequentially formed on the interlayer dielectric layer. Then, an upper electrode and a phase change pattern are formed by etching predetermined portions of the upper electrode layer and the phase change layer using an etching gas having chlorine gas.

    Abstract translation: 一种相变存储器件的制造方法，其能够通过防止相变层的热损失来提高相变层的复位电流特性。 在半导体衬底上形成具有下部电极接触的层间绝缘层。 在层间电介质层上依次形成相变层和上电极层。 然后，通过使用具有氯气的蚀刻气体蚀刻上电极层和相变层的预定部分来形成上电极和相变图案。

    METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE 审中-公开
    在半导体器件中形成图案的方法

    公开(公告)号：US20080182395A1

    公开(公告)日：2008-07-31

    申请号：US11967201

    申请日：2007-12-30

    Applicant: Chang-Heon PARK ,  Dong-Ryeol Lee

    Inventor： Chang-Heon PARK ,  Dong-Ryeol Lee

    IPC: H01L21/283

    CPC classification number: H01L29/4236 ,  H01L21/32137 ,  H01L21/823842 ,  H01L29/4916

    Abstract: A method for fabricating a dual polysilicon gate includes providing a substrate, forming a gate oxide layer over the substrate, forming a polysilicon layer over the gate oxide layer, patterning the polysilicon layer in a condition of applying a relatively low first pressure or a relatively high first bias power, thereby forming gate patterns and exposing a given portion of the gate oxide layer, and forming an oxide layer over the exposed given portion of the gate oxide layer by using a plasma oxidation process while performing an over-etch process on the gate patterns in a condition of applying a second pressure higher than the first pressure or a second bias power lower than the first bias power.

    Abstract translation: 制造双多晶硅栅极的方法包括提供衬底，在衬底上形成栅极氧化层，在栅极氧化物层上形成多晶硅层，在施加相对低的第一压力或相对高的条件下对多晶硅层进行构图 从而形成栅极图案并暴露栅极氧化物层的给定部分，并且通过使用等离子体氧化工艺在栅极氧化层的暴露的给定部分上形成氧化物层，同时在栅极上执行过蚀刻工艺 在施加比第一压力高的第二压力或低于第一偏压功率的第二偏压功率的条件下的图案。

    Method for fabricating semiconductor device having capacitor
    4.
    发明授权
    Method for fabricating semiconductor device having capacitor 有权
    制造具有电容器的半导体器件的方法

    公开(公告)号：US07396772B2

    公开(公告)日：2008-07-08

    申请号：US11582638

    申请日：2006-10-17

    Applicant: Sang-Do Lee ,  Sun-Woong Na ,  Dong-Ryeol Lee ,  Dong-Goo Choi

    Inventor： Sang-Do Lee ,  Sun-Woong Na ,  Dong-Ryeol Lee ,  Dong-Goo Choi

    IPC: H01L21/302

    CPC classification number: H01L27/10888 ,  H01L21/76816 ,  H01L27/10852 ,  H01L27/10885 ,  H01L28/91

    Abstract: A method for fabricating a semiconductor device includes: providing a substrate structure including a bit line and a capacitor formed apart from each other at a different level; forming first, second, and third insulation layers over the bit line, the second insulation layer being a first etch stop layer; forming a second etch stop layer over a top electrode of the capacitor; forming a fourth insulation layer over the third insulation layer and the second etch stop layer; and performing a plurality of etch steps to expose an upper surface of the bit line and an upper surface of the capacitor.

    Abstract translation: 一种制造半导体器件的方法包括：提供包括位线和电容器的衬底结构，所述衬底结构在不同的水平上彼此分开; 在所述位线上形成第一，第二和第三绝缘层，所述第二绝缘层是第一蚀刻停止层; 在所述电容器的顶部电极上形成第二蚀刻停止层; 在所述第三绝缘层和所述第二蚀刻停止层上形成第四绝缘层; 以及执行多个蚀刻步骤以暴露位线的上表面和电容器的上表面。

    Method for fabricating a semiconductor device
    8.
    发明授权
    Method for fabricating a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07608546B2

    公开(公告)日：2009-10-27

    申请号：US11765673

    申请日：2007-06-20

    Applicant: Sang-Soo Park ,  Chang-Heon Park ,  Dong-Ryeol Lee

    Inventor： Sang-Soo Park ,  Chang-Heon Park ,  Dong-Ryeol Lee

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/32139 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/3146 ,  H01L21/318

    Abstract: A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.

    Abstract translation: 一种制造半导体器件的方法包括在包括单元区域和周边区域的衬底上形成蚀刻目标层。 第一硬掩模层，第二硬掩模层和抗反射涂层形成在蚀刻目标层上。 在抗反射涂层上形成感光图案。 抗反射涂层被蚀刻成具有比感光图案的宽度小的宽度。 蚀刻第二硬掩模层。 在第一硬掩模层上进行主蚀刻和过蚀刻。 然后蚀刻目标层。

    Lens position determination apparatus of optical pickup
    9.
    发明授权
    Lens position determination apparatus of optical pickup 有权
    光学拾取器的透镜位置确定装置

    公开(公告)号：US07116608B2

    公开(公告)日：2006-10-03

    申请号：US10631823

    申请日：2003-08-01

    Applicant: Jong-ha Jun ,  Dong-ryeol Lee ,  Young-pyo Lee ,  Chul-ho Jeon ,  Hyun-cheal Bang ,  Ho-jin Yoon

    Inventor： Jong-ha Jun ,  Dong-ryeol Lee ,  Young-pyo Lee ,  Chul-ho Jeon ,  Hyun-cheal Bang ,  Ho-jin Yoon

    IPC: G11B7/00

    CPC classification number: G11B7/1378 ,  G11B7/22

    Abstract: A lens position determination apparatus of an optical pickup includes a lens holder with a mounted lens, a base supporting the lens holder, and a pressing member. The base has an accommodation surface accommodating the lens holder and a pair of facing support walls on the accommodation surface. The pressing member is a bendable arm. A first elastic portion between arm end portions applies an elastic force in a direction in which the arm end portions closely contact the support walls. A second elastic portion connected to the arm presses the lens holder toward the accommodation surface to fix the lens holder position. The lens adjustment can be performed while the pressing force to fix the lens holder to the base is removed by bending the pressing member into a V shape to reduce frictional resistance of the lens holder with the base during the adjustment.

    Abstract translation: 光学拾取器的透镜位置确定装置包括具有安装的透镜的透镜保持器，支撑透镜保持器的基座和按压部件。 底座具有容纳透镜架的容纳表面和在容纳表面上的一对相对的支撑壁。 按压构件是可弯曲臂。 臂端部之间的第一弹性部分在臂端部紧密接触支撑壁的方向上施加弹性力。 连接到臂的第二弹性部分将透镜保持器朝向容纳表面压住以固定透镜保持器位置。 可以通过将按压构件弯曲成V形来消除将透镜保持器固定到基座的按压力，从而在调整期间减少透镜架与基座的摩擦阻力。

    Method and apparatus compensating for tilt
    10.
    发明授权
    Method and apparatus compensating for tilt 失效
    补偿倾斜的方法和装置

    公开(公告)号：US07486596B2

    公开(公告)日：2009-02-03

    申请号：US11089535

    申请日：2005-03-25

    Applicant: Byung-youn Song ,  Jong-koog Lee ,  Dong-ryeol Lee ,  Pyong-yong Seong ,  Kyung-ui Park ,  Dong-won Kim

    Inventor： Byung-youn Song ,  Jong-koog Lee ,  Dong-ryeol Lee ,  Pyong-yong Seong ,  Kyung-ui Park ,  Dong-won Kim

    IPC: G11B7/00

    CPC classification number: G11B7/0956

    Abstract: A method and apparatus for compensating tilt. The tilt compensation method includes: obtaining one of a jitter best, an RF envelope, and a focus DC offset (FODC) from a detection signal of the ROM data region and determining whether the obtained value is within a tolerance range; and obtaining an initial skew compensation value using the obtained value when the obtained value is within the tolerance, changing the magnitude of current applied to an actuator designed to perform driving in at least three-axis directions to drive an objective lens of an optical pickup assembly in a radial tilt direction when the obtained value is not within the tolerance range, and repeating the obtaining of one of the jitter best, the RF envelope, and the FODC and changing the magnitude of the current until the obtained value is within the tolerance range.

    Abstract translation: 一种用于补偿倾斜的方法和装置。 倾斜补偿方法包括：从ROM数据区域的检测信号中获得最佳抖动，RF包络和聚焦DC偏移（FODC）中的一个，并确定所获得的值是否在公差范围内; 以及当所获得的值在公差内时，使用所获得的值获得初始偏移补偿值，改变施加到设计成在至少三个轴方向上执行驱动的致动器的电流的大小，以驱动光学拾取组件的物镜 当获得的值不在公差范围内时，在径向倾斜方向上，并且重复获得最佳抖动之一，RF包络和FODC，并且改变电流的幅度直到所获得的值在公差范围内 。

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