公开(公告)号：US20090321705A1

公开(公告)日：2009-12-31

申请号：US12256385

申请日：2008-10-22

申请人： Min Yong Lee ,  Su Jin Chae ,  Keum Bum Lee ,  Dong Ryeol Lee ,  Hyung Suk Lee

发明人： Min Yong Lee ,  Su Jin Chae ,  Keum Bum Lee ,  Dong Ryeol Lee ,  Hyung Suk Lee

IPC分类号： H01L47/00 ,  H01L21/00

CPC分类号： H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： A phase change memory device includes a semiconductor substrate, a first conductive pattern formed on the semiconductor substrate, a second conductive pattern contacting an upper surface of the first conductive pattern and having a diameter less than a diameter of the first conductive pattern, and a phase change material layer contacting the second conductive pattern.

摘要翻译： 相变存储器件包括半导体衬底，形成在半导体衬底上的第一导电图案，与第一导电图案的上表面接触并具有小于第一导电图案的直径的直径的第二导电图案，以及相位 改变与第二导电图案接触的材料层。

公开(公告)号：US09123879B2

公开(公告)日：2015-09-01

申请号：US14202802

申请日：2014-03-10

申请人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

发明人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC分类号： H01L27/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

摘要翻译： 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层，隧道势垒层，存储层。 存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。 磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

公开(公告)号：US07893421B2

公开(公告)日：2011-02-22

申请号：US12482607

申请日：2009-06-11

申请人： Keum Bum Lee ,  Hye Jin Seo ,  Hyung Suk Lee

发明人： Keum Bum Lee ,  Hye Jin Seo ,  Hyung Suk Lee

IPC分类号： H01L47/00

CPC分类号： H01L45/144 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/126 ,  H01L45/16

摘要： A phase change memory device is presented that has a lower electrode contact that has a gradient resistance profile ranging from a lower resistive lower end to a higher resistive upper end. The phase change memory device includes a semiconductor substrate, a lower electrode contact, and a phase change pattern. The semiconductor substrate has a switching device. The lower electrode contact is formed on the switching device and has a specific resistance which gradually increases from a lower part to an upper part of the lower electrode contact. The phase change pattern layer is formed on the lower electrode contact.

摘要翻译： 提出了一种相变存储器件，其具有下电极接触，其具有从下电阻下端到较高电阻上端的梯度电阻分布。 相变存储器件包括半导体衬底，下电极接触和相变图案。 半导体衬底具有开关器件。 下部电极接触形成在开关器件上，并且具有从下部电极接触件的下部向上部逐渐增加的电阻率。 相变图案层形成在下电极触点上。

公开(公告)号：US09406871B2

公开(公告)日：2016-08-02

申请号：US14807267

申请日：2015-07-23

申请人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

发明人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC分类号： H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US09385304B2

公开(公告)日：2016-07-05

申请号：US14203249

申请日：2014-03-10

申请人： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

发明人： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

IPC分类号： H01L27/00 ,  H01L43/02 ,  H01L43/12 ,  H01L45/00 ,  G11C11/56 ,  G11C11/15 ,  G11C11/16 ,  H01L27/22 ,  H01L27/24 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04

摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

摘要翻译： 根据一个实施例，公开了一种磁存储器。 该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层 磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。 第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

公开(公告)号：US20130171798A1

公开(公告)日：2013-07-04

申请号：US13482190

申请日：2012-05-29

申请人： Seung Beom BAEK ,  Hyung Suk Lee

发明人： Seung Beom BAEK ,  Hyung Suk Lee

IPC分类号： H01L21/02

CPC分类号： H01L45/06 ,  H01L45/126 ,  H01L45/1608

摘要： A method of manufacturing a phase-change random access memory device. The method includes forming a word line on a semiconductor substrate, forming a switching element material and a hard mask material on the word line, etching the switching element material and the hard mask material to form a hole exposing the word line, forming an insulating material on a sidewall and a bottom of the hole, removing the hard mask material; and forming a heater material on the switching element material. The hard mask material has different etch selectivity from the insulating material.

摘要翻译： 一种制造相变随机存取存储器件的方法。 该方法包括在半导体衬底上形成字线，在字线上形成开关元件材料和硬掩模材料，蚀刻开关元件材料和硬掩模材料以形成暴露字线的孔，形成绝缘材料 在孔的侧壁和底部上，去除硬掩模材料; 以及在所述开关元件材料上形成加热材料。 硬掩模材料与绝缘材料具有不同的蚀刻选择性。

公开(公告)号：US20110125397A1

公开(公告)日：2011-05-26

申请号：US12927042

申请日：2010-11-05

申请人： Hyung Suk Lee

发明人： Hyung Suk Lee

IPC分类号： G01C21/00

CPC分类号： G01C21/365

摘要： A navigation method, apparatus, and a computer readable medium for a mobile terminal support a display mode that provides a good field of view and enhanced readability. An input signal for enabling a route guidance function is received. Map data for route guidance is outputted when the route guidance function is enabled. Whether to activate a heads-up display (HUD) mode is determined. When the HUD mode is activated, only preset guidance information items that are extracted from the map data are displayed. Hence, the driver does not have to look away from the road to view the map on the screen, significantly reducing the risk of traffic accidents. Simplified route guidance information is provided to solve poor map readability due to screen size limitations of a mobile terminal.

摘要翻译： 用于移动终端的导航方法，装置和计算机可读介质支持提供良好视野和增强的可读性的显示模式。 接收用于启用路线引导功能的输入信号。 当路径引导功能有效时，输出路线引导的地图数据。 确定是否激活平视显示（HUD）模式。 当HUD模式被激活时，仅显示从地图数据提取的预设引导信息项。 因此，驾驶员不必远离道路，在屏幕上观看地图，大大降低了交通事故的风险。 提供简化的路线指导信息来解决由于移动终端的屏幕尺寸限制引起的差的地图可读性。

公开(公告)号：US09285236B2

公开(公告)日：2016-03-15

申请号：US12927042

申请日：2010-11-05

申请人： Hyung Suk Lee

发明人： Hyung Suk Lee

IPC分类号： G01C21/00 ,  G02B27/01 ,  G01C21/36 ,  G01C21/34 ,  G01C21/26

CPC分类号： G01C21/365

摘要： A navigation method, apparatus, and a computer readable medium for a mobile terminal support a display mode that provides a good field of view and enhanced readability. An input signal for enabling a route guidance function is received. Map data for route guidance is outputted when the route guidance function is enabled. Whether to activate a heads-up display (HUD) mode is determined. When the HUD mode is activated, only preset guidance information items that are extracted from the map data are displayed. Hence, the driver does not have to look away from the road to view the map on the screen, significantly reducing the risk of traffic accidents. Simplified route guidance information is provided to solve poor map readability due to screen size limitations of a mobile terminal.

摘要翻译： 用于移动终端的导航方法，装置和计算机可读介质支持提供良好视野和增强的可读性的显示模式。 接收用于启用路线引导功能的输入信号。 当路径引导功能有效时，输出路线引导的地图数据。 确定是否激活平视显示（HUD）模式。 当HUD模式被激活时，仅显示从地图数据提取的预设引导信息项。 因此，驾驶员不必远离道路，在屏幕上观看地图，大大降低了交通事故的风险。 提供简化的路线指导信息来解决由于移动终端的屏幕尺寸限制引起的差的地图可读性。

公开(公告)号：US20100046079A1

公开(公告)日：2010-02-25

申请号：US10584409

申请日：2005-02-04

申请人： Jun-Bo Yoon ,  Sung-il Chang ,  Dae-Hyun Kim ,  Hyung Suk Lee ,  Joon-Yong Choi ,  Weon-Wi Jang ,  Kyungho Lee

发明人： Jun-Bo Yoon ,  Sung-il Chang ,  Dae-Hyun Kim ,  Hyung Suk Lee ,  Joon-Yong Choi ,  Weon-Wi Jang ,  Kyungho Lee

IPC分类号： G02B27/12 ,  G03F7/20 ,  B32B3/00 ,  B29D11/00 ,  H01H57/00 ,  H05K1/00

CPC分类号： H01L21/0272 ,  B81B2203/0118 ,  B81B2203/019 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00166 ,  G02B3/0012 ,  G02B3/0056 ,  G03F7/0005 ,  G03F7/201 ,  G03F7/2014 ,  H01L21/0274 ,  H01L21/76885 ,  H01L23/5222 ,  H01L2924/0002 ,  Y10T428/24479 ,  H01L2924/00

摘要： The present invention relates to polymer patterns of various shapes formed using modifications of means and methods used in the prior lithography process, and the metal film patterns, metal patterns and plastic molds using the polymer patterns, as well as methods of forming these patterns and molds. The method of forming the polymer patterns comprises the steps of: (a) depositing a photosensitive polymer on the substrate to form a polymer film; (b) placing a photomask on the polymer film; and (c) irradiating the polymer film with a light moving in random direction through the photomask, so as to form at least one pattern which is concave from the surface of the polymer film in a direction perpendicular to the substrate and extends in a direction parallel to the substrate. The inventive polymer patterns have at least one pattern which is concave from the surface of the polymer film in a direction perpendicular to the substrate and extends in a direction parallel to the substrate. The vertical cross-section of the concave patterns has at least one curved surface.

摘要翻译： 本发明涉及使用在现有光刻工艺中使用的方法和方法的改进形成的各种形状的聚合物图案，以及使用聚合物图案的金属膜图案，金属图案和塑料模具以及形成这些图案和模具的方法 。 形成聚合物图案的方法包括以下步骤：（a）将光敏聚合物沉积在基底上以形成聚合物膜; （b）将光掩模放在聚合物膜上; 和（c）以沿随机方向移动的光照射聚合物膜通过光掩模，从而形成至少一个图案，该图案在垂直于基底的方向上从聚合物膜的表面凹入并在平行方向上延伸 到基底。 本发明的聚合物图案具有至少一种图案，其在垂直于基底的方向上从聚合物膜的表面凹入，并且在平行于基底的方向上延伸。 凹形图案的垂直横截面具有至少一个曲面。