摘要:
An interposer includes: a circuit board stack in which circuit boards are stacked; and an outer board arranged on at least one of outer side surfaces of the circuit board stack. The circuit boards are arranged include first conductive lines having first ends exposed through a first side portion of the circuit boards and second ends exposed through a second side portion opposite the first side portion of the circuit boards. The outer board includes second conductive lines having first ends exposed through a different side from the first side portion of the circuit boards and second ends exposed through a side portion located on a same side as the second side portion of the circuit boards.
摘要:
Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.
摘要:
Control of smoke and fire in a region threatened by a fire through the use of an exit door and a doorcase around an exit door is accomplished in such a manner to first supply water from a water source to a water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube is provided with a solenoid valve for controlling the water flow into the doorcase and a branch-connecting portion. Further, pressurized air is supplied to an air supply tube connected to the branch-connecting portion to fluid-communicate with the water supply tube. The air supply tube is provided with an air solenoid valve for controlling the airflow into the branch-connecting portion. The solenoid valve is opened to render the water to flow into the doorcase having a plurality of nozzle holes facing to the exit door, if a fire is detected either by a detector or a manual actuator. Further, the air solenoid valve is opened to render the air under pressure to flow into the branch-connecting portion, if opening the exit door is detected by a pressure sensor.
摘要:
The method of bonding an interposer and an integrated circuit chip includes preparing an interposer including an insulator and conductive lines each having one end exposed to a first surface of the insulator and another end exposed to a second surface opposite to the first surface; placing a bonding mask on the interposer; forming through-holes on the bonding mask before or after the placing of the bonding mask on the interposer; filling the plurality with a conductive material; and bonding an integrated circuit chip to the bonding mask.
摘要:
An interposer includes: a circuit board stack in which circuit boards are stacked; and an outer board arranged on at least one of outer side surfaces of the circuit board stack. The circuit boards are arranged include first conductive lines having first ends exposed through a first side portion of the circuit boards and second ends exposed through a second side portion opposite the first side portion of the circuit boards. The outer board includes second conductive lines having first ends exposed through a different side from the first side portion of the circuit boards and second ends exposed through a side portion located on a same side as the second side portion of the circuit boards.
摘要:
A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a semiconductor memory device according to the invention includes forming an insulation layer on a semiconductor substrate having a cell array region, a core region, and a peripheral region, each having at least one transistor formed therein, and forming both a first landing pad in the core region on the insulation layer and a second landing pad in the peripheral region, the first landing pad being overlapped with a part of a first conductive line. The invention reduces the contact resistance and prevents or minimizes a device failure caused by a misalignment, with the simplified process.
摘要:
For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).
摘要:
A polynomial predistorter and predistorting method for predistorting a complex modulated baseband signal are provided. In the polynomial predistorter, a first complex multiplier generates first complex predistortion gains, using a current input signal and complex polynomial coefficients modeled on the inverse non-linear distortion characteristic of the power amplifier, and multiplies them by I and Q signal components of the current input signal, respectively. At least one second complex multiplier generates second complex predistortion gains using the complex polynomial coefficients and previous predistorted signals and multiplies them by I and Q signal components of the previous predistorted signals, respectively. A summer sums the outputs of the first and second complex multipliers and outputs the sum as a predistorted signal to the power amplifier.
摘要:
For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).
摘要:
Methods for manufacturing a storage node of a capacitor of a semiconductor device and a storage node manufactured by these methods are provided. An exemplary method for manufacturing a storage node of a capacitor of a semiconductor device includes forming a mold layer on a semiconductor substrate, forming a mold for the storage node by patterning the mold layer by a photolithography process, introducing a photomask which includes a plurality of light transmitting patterns separated from each other and which define the region to be occupied by the storage node, and forming a storage node that has the shape formed by the mold. The photolithography process is performed with the occurrence of a pattern bridge phenomenon, e.g., the transferred light transmitting patterns are connected to each other in a pattern transferred from the light transmitting patterns to the mold.