公开(公告)号：US20130009192A1

公开(公告)日：2013-01-10

申请号：US13368043

申请日：2012-02-07

申请人： Hyun Wook Shim ,  Dong Ju Lee ,  Dong Ik Shin ,  Young Sun Kim ,  Makoto Asai ,  Yu Ri Sohn

发明人： Hyun Wook Shim ,  Dong Ju Lee ,  Dong Ik Shin ,  Young Sun Kim ,  Makoto Asai ,  Yu Ri Sohn

IPC分类号： H01L33/30

CPC分类号： H01L33/025 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.

摘要翻译： 提供了包括p型氮化物半导体层，n型氮化物半导体层和在它们之间形成的有源层的氮化物半导体发光器件。 接触层位于p型氮化物半导体层和p侧电极之间。 接触层包括具有第一杂质浓度以与p侧电极欧姆接触的第一p型氮化物层和具有第二杂质浓度的第二p型氮化物层，第二杂质浓度的浓度低于 第一杂质浓度。

公开(公告)号：US20120326121A1

公开(公告)日：2012-12-27

申请号：US13603192

申请日：2012-09-04

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US20120134373A1

公开(公告)日：2012-05-31

申请号：US13297071

申请日：2011-11-15

申请人： Hwang Jun Song ,  Wan Kim ,  Jin Woo Hong ,  Hyung Rai Oh ,  Ki Ung Jung ,  Jong Soo Lim ,  Dong Ju Lee ,  Hyun Chul Joo

发明人： Hwang Jun Song ,  Wan Kim ,  Jin Woo Hong ,  Hyung Rai Oh ,  Ki Ung Jung ,  Jong Soo Lim ,  Dong Ju Lee ,  Hyun Chul Joo

IPC分类号： H04J3/00

CPC分类号： H04L1/0041 ,  H03M13/3761 ,  H04L1/0056

摘要： Provided are a method of packetizing encoded symbols and an apparatus using the same. The method includes an encoded symbol and target packet selection step of deciding a first source symbol and selecting an unpacketized first encoded symbol and a target packet into which the unpacketized first encoded symbol is inserted if there is the unpacketized first encoded symbol of at least one first encoded symbol, which is an encoded symbol of the first source symbol generated using an AND-OR tree structure, and a packetization step of generating a second source symbol based on at least one unpacketized first encoded symbol by use of the AND-OR tree structure, generating at least one second encoded symbol based on the second source symbol by use of the AND-OR tree structure, and packetizing at least one of second encoded symbols into the target packet along with the first encoded symbol.

摘要翻译： 提供了一种打包编码符号的方法和使用其的装置。 该方法包括：编码符号和目标分组选择步骤，用于如果存在至少一个第一编码符号的未分组的第一编码符号，则选择未分组的第一编码符号和未分组的第一编码符号插入到其中的目标分组 编码符号，其是使用AND-OR树结构生成的第一源符号的编码符号，以及分组化步骤，通过使用AND-OR树结构基于至少一个未封装的第一编码符号生成第二源符号 ，通过使用AND-OR树结构基于第二源符号生成至少一个第二编码符号，以及将第二编码符号中的至少一个与第一编码符号一起分组到目标分组中。

公开(公告)号：US20100283070A1

公开(公告)日：2010-11-11

申请号：US12007497

申请日：2008-01-11

申请人： Sun Woon Kim ,  Dong Joon Kim ,  Dong Ju Lee

发明人： Sun Woon Kim ,  Dong Joon Kim ,  Dong Ju Lee

IPC分类号： H01L33/10 ,  H01L33/26

CPC分类号： H01L33/382 ,  H01L33/08

摘要： There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.

摘要翻译： 提供了具有改进的光提取效率的氮化物半导体发光器件及其制造方法。 根据本发明的一个方面的氮化物半导体发光器件包括包括第一和第二导电型氮化物半导体的发光层压体和在其间形成的有源层，与第一和第二导电氮化物半导体层电连接的第一和第二电极焊盘， 分别形成在第二电极焊盘下方并且具有到达第一导电型氮化物半导体层的至少一部分的深度的多个图案，以及形成在多个图案的内表面处的绝缘膜，以使 通过多个图案曝光的发光层压从第二电极焊盘。

公开(公告)号：US20070121436A1

公开(公告)日：2007-05-31

申请号：US11529346

申请日：2006-09-29

申请人： Shigeo Nakamura ,  Takeshi Shimano ,  Masaya Horino ,  Irizo Naniwa ,  No-Cheol Park ,  Jeonghoon Yoo ,  Dong-Ju Lee ,  Jeseung Oh ,  Chul Park

发明人： Shigeo Nakamura ,  Takeshi Shimano ,  Masaya Horino ,  Irizo Naniwa ,  No-Cheol Park ,  Jeonghoon Yoo ,  Dong-Ju Lee ,  Jeseung Oh ,  Chul Park

IPC分类号： G11B7/00

CPC分类号： G11B7/08576 ,  G11B7/0933 ,  G11B7/0935

摘要： A small-sized optical disc drive includes one voice coil motor magnet within which a tracking coil and two focusing coils are disposed such that the tracking coil straddles the two poles of permanent magnets that are adjacently disposed. The two focusing coils are disposed on either side of the tracking coil, with each of the two focusing coils being only disposed over one of the permanent magnets.

摘要翻译： 小型光盘驱动器包括一个音圈电动机磁体，其中设置有跟踪线圈和两个聚焦线圈，使得跟踪线圈横跨相邻设置的永磁体的两极。 两个聚焦线圈设置在跟踪线圈的任一侧，两个聚焦线圈中的每一个仅设置在一个永磁体上。

公开(公告)号：US09150416B2

公开(公告)日：2015-10-06

申请号：US13976339

申请日：2012-01-09

申请人： Seok-Woo Jeon ,  Soon-Hyung Hong ,  Dong-Ju Lee ,  Kwang-Hyun Park

发明人： Seok-Woo Jeon ,  Soon-Hyung Hong ,  Dong-Ju Lee ,  Kwang-Hyun Park

IPC分类号： C01B21/064

CPC分类号： C01B21/0648 ,  C01P2002/82 ,  C01P2002/88 ,  C01P2004/04 ,  C01P2004/24

摘要： Provided is a method of manufacturing a hexagonal boron nitride nanosheet to mass-produce a high-quality hexagonal boron nitride nanosheet at a low temperature in a safe process.The method of manufacturing a hexagonal boron nitride nanosheet includes (a) obtaining an alkali metal ion or alkali earth metal ion from a salt mixture including at least two kinds of alkali metal salt or alkali earth metal salt, (b) preparing a hexagonal boron nitride interlayer compound by inserting the alkali metal ion or alkali earth metal ion into layers of hexagonal boron nitride, and (c) obtaining a hexagonal boron nitride nanosheet by removing the alkali metal ion or alkali earth metal ion from the hexagonal boron nitride interlayer compound.

摘要翻译： 提供一种制造六方氮化硼纳米片的方法，以在安全的过程中在低温下大量生产高品质的六方氮化硼纳米片。 制造六方氮化硼纳米片的方法包括（a）从包含至少两种碱金属盐或碱土金属盐的盐混合物中获得碱金属离子或碱土金属离子，（b）制备六方氮化硼 通过将碱金属离子或碱土金属离子插入六方氮化硼的层中，并且（c）通过从六方氮化硼夹层化合物中除去碱金属离子或碱土金属离子获得六方氮化硼纳米片。

公开(公告)号：US08255936B2

公开(公告)日：2012-08-28

申请号：US11987773

申请日：2007-12-04

申请人： Goichi Akanuma ,  No-Cheol Park ,  Dong-Ju Lee ,  Myeong-Gyu Song ,  Yang-Hyun Seok

发明人： Goichi Akanuma ,  No-Cheol Park ,  Dong-Ju Lee ,  Myeong-Gyu Song ,  Yang-Hyun Seok

IPC分类号： G11B7/09

CPC分类号： G11B7/08582 ,  G11B7/0933 ,  G11B7/0935

摘要： An objective lens drive apparatus configured to drive an objective lens that focuses a laser beam on an optical disk is disclosed, the apparatus including a holding member that holds the objective lens; at least one pair of drive magnets arranged to face each other at opposite sides of the holding member with respect a tangential direction that is parallel to a tangential line of the optical disk, the drive magnets having protruding end portions that protrude from each side of the holding member with respect to a tracking direction that is parallel to a radial direction of the optical disk; and plural drive coils configured to drive the holding member through interaction with the drive magnets, at least one of the drive coils being arranged on each side of the drive magnets with respect to the tangential direction.

摘要翻译： 公开了一种被配置为驱动将激光聚焦在光盘上的物镜的物镜驱动装置，该装置包括保持物镜的保持部件; 至少一对驱动磁体相对于与光盘的切线平行的切线方向相对于保持部件的相对侧彼此面对地布置，驱动磁体具有突出的端部， 保持构件相对于与光盘的径向平行的跟踪方向; 以及多个驱动线圈，被配置为通过与所述驱动磁体的相互作用来驱动所述保持构件，所述驱动线圈中的至少一个相对于所述切线方向布置在所述驱动磁体的每一侧上。

公开(公告)号：US20120168769A1

公开(公告)日：2012-07-05

申请号：US13344298

申请日：2012-01-05

申请人： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

发明人： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

IPC分类号： H01L33/02

CPC分类号： H01L33/0075 ,  H01L33/007 ,  H01L33/32

摘要： There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

摘要翻译： 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

公开(公告)号：US08028625B2

公开(公告)日：2011-10-04

申请号：US12366859

申请日：2009-02-06

申请人： Jai-Ha Kim ,  Dong-Ju Lee ,  Yang-Wook Hur ,  Ki-Soo Bae

发明人： Jai-Ha Kim ,  Dong-Ju Lee ,  Yang-Wook Hur ,  Ki-Soo Bae

IPC分类号： F42B15/36

CPC分类号： F42B15/36

摘要： Disclosed is a device for separating a propulsion system from a missile, the device including a locking unit configured to fix a propulsion system to a missile, a string disposed to cross a rear portion of the propulsion system to be broken by heat of the propulsion system, and an unlocking unit configured to unlock the missile by the broken string, whereby the number of additional components of an unlocking system can be reduced as many as possible so as to simplify the configuration of the apparatus, resulting in guaranteeing an enhanced performance of the missile, an easy assembly of the missile, and a reduction of a fabricating cost.

摘要翻译： 公开了一种用于将推进系统与导弹分离的装置，该装置包括构造成将推进系统固定到导弹的锁定单元，设置成跨越推进系统的后部以被推进系统的热量破坏的弦 以及解锁单元，其被配置为通过断线对所述导弹解锁，由此可以尽可能多地减少解锁系统的附加组件的数量，以便简化设备的配置，从而保证提高 导弹，易于组装的导弹，并减少制造成本。

公开(公告)号：US20110121259A1

公开(公告)日：2011-05-26

申请号：US12902233

申请日：2010-10-12

申请人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

发明人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

摘要翻译： 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。