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    Photomask including focus metrology mark, substrate target including focus monitor pattern, metrology method for lithography process, and method of manufacturing integrated circuit device
    1.
    发明授权
    Photomask including focus metrology mark, substrate target including focus monitor pattern, metrology method for lithography process, and method of manufacturing integrated circuit device 有权
    包括焦点计量标记的光掩模，包括焦点监测图案的基板目标，光刻工艺的计量方法和制造集成电路装置的方法

    公开(公告)号：US09557655B2

    公开(公告)日：2017-01-31

    申请号：US14700864

    申请日：2015-04-30

    Applicant: Ji-myung Kim ,  Yong-chul Kim ,  Young-sik Park ,  Kwang-sub Yoon

    Inventor： Ji-myung Kim ,  Yong-chul Kim ,  Young-sik Park ,  Kwang-sub Yoon

    IPC: H01L21/66 ,  G03F7/20 ,  H01L21/027 ,  G03F1/38

    CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F1/44 ,  H01L21/027 ,  H01L21/0274

    Abstract: A photomask includes a focus metrology mark region that includes a plurality of focus monitor patterns. To measure a focal variation of a feature pattern formed on a substrate, a substrate target for lithography metrology including a focus metrology mark formed on the same level as the feature pattern is used. A lithography metrology apparatus includes a projection device including a polarizer; a detection device detecting the powers of ±n-order diffracted light beams from among output beams diffracted by the focus metrology mark of a to-be-measured substrate; and a determination device which determines, from a power deviation between the ±n-order diffracted light beams, defocus experienced by the feature pattern.

    Abstract translation: 光掩模包括聚焦计量标记区域，其包括多个聚焦监视器图案。 为了测量形成在基板上的特征图案的焦点变化，使用包括与特征图案在同一水平上形成的焦点计量标记的光刻测量用基板目标。 光刻计量装置包括：投影装置，包括偏振器; 检测装置，通过待测基板的焦点计量标记，检测从衍射光的衍射光束中的±n级衍射光束的功率; 以及确定装置，其从±n级衍射光束之间的功率偏差确定由特征图案经历的散焦。

    Method of forming patterns of semiconductor device
    3.
    发明申请
    Method of forming patterns of semiconductor device 有权
    形成半导体器件图案的方法

    公开(公告)号：US20100248492A1

    公开(公告)日：2010-09-30

    申请号：US12655344

    申请日：2009-12-29

    Applicant: Dong-ki Yoon ,  Shi-yong Yi ,  Seong-woon Choi ,  Seok-hwan Oh ,  Kwang-sub Yoon ,  Myeong-cheol Kim ,  Young-ju Park

    Inventor： Dong-ki Yoon ,  Shi-yong Yi ,  Seong-woon Choi ,  Seok-hwan Oh ,  Kwang-sub Yoon ,  Myeong-cheol Kim ,  Young-ju Park

    IPC: H01L21/302

    CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/115 ,  H01L27/11517

    Abstract: A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.

    Abstract translation: 通过使用含碳（C）的膜来形成半导体器件的精细图案的方法包括在包括第一和第二区域的衬底上形成蚀刻靶膜; 在所述第一区域中的所述蚀刻目标膜上形成多个第一含C膜的图案; 形成覆盖所述多个第一含C膜图案的顶表面和侧表面的缓冲层; 形成第二含C膜; 去除第二区域中的第二含C膜; 通过去除第一和第二区域中的缓冲层的一部分来暴露多个第一含C膜的图案; 并且通过使用多个第一含C膜膜图案和残留在第一区域中的第二含C膜的部分来蚀刻蚀刻目标膜作为蚀刻掩模。

    Photosensitive polymer including fluorine, resist composition containing the same and patterning method using the resist composition
    6.
    发明授权
    Photosensitive polymer including fluorine, resist composition containing the same and patterning method using the resist composition 有权
    包含氟的光敏聚合物，含有它们的抗蚀剂组合物和使用抗蚀剂组合物的图案化方法

    公开(公告)号：US06933096B2

    公开(公告)日：2005-08-23

    申请号：US10719651

    申请日：2003-11-21

    Applicant: Kwang-Sub Yoon ,  Ki-Yong Song

    Inventor： Kwang-Sub Yoon ,  Ki-Yong Song

    IPC: G03F7/004 ,  G03F7/039 ,  C08F214/18

    CPC classification number: G03F7/0392 ,  G03F7/0046 ,  Y10S430/108

    Abstract: A photosensitive polymer including fluorine, a resist composition containing the same and a patterning method for IC fabrication using the resist composition are provided. The photosensitive polymer having at least one selected from the group consisting of fluorine-substituted or unsubstituted alkyl ester, tetrahydropyranyl ester, tetrahydrofuranyl ester, nitrile, amide, carbonyl and hexafluoro alkyl having a hydrophilic group, and a trifluorovinyl derivative monomer as a repeating unit and having a weight average molecular weight of about 3,000 to about 100,000. The photosensitive polymer exhibits high transmittance for a light source of F2 (157 nm), high dry etching resistance, and has characteristics suitable to realize an unitrafine pattern size.

    Abstract translation: 提供了包含氟的光敏聚合物，含有它的抗蚀剂组合物和使用该抗蚀剂组合物的IC制造的图案化方法。 具有选自氟取代或未取代的烷基酯，四氢吡喃基酯，四氢呋喃基酯，腈，酰胺，羰基和具有亲水基团的六氟烷基中的至少一种的光敏聚合物和作为重复单元的三氟乙烯基衍生物单体， 重均分子量为约3,000至约100,000。 感光性聚合物对于F 2（157nm）的光源具有高透射率，具有高的耐干蚀刻性，并且具有适于实现单位图案尺寸的特性。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20160190142A1

    公开(公告)日：2016-06-30

    申请号：US15061038

    申请日：2016-03-04

    Applicant: Ju-Youn Kim ,  Sang-Duk Park ,  Jae-Kyung Seo ,  Kwang-Sub Yoon ,  In-Gu Yoon

    Inventor： Ju-Youn Kim ,  Sang-Duk Park ,  Jae-Kyung Seo ,  Kwang-Sub Yoon ,  In-Gu Yoon

    IPC: H01L27/11 ,  H01L21/266 ,  H01L21/265 ,  H01L21/8238 ,  H01L29/66

    CPC classification number: H01L27/1104 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L29/66545

    Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

    Abstract translation: 在制造半导体器件的方法中，第一栅电极和第二栅电极分别设置在衬底上，第一栅极电极和第二栅电极分别形成在衬底的第一区域和第二区域中。 导电缓冲层沿着第一栅电极和第二栅电极的侧壁以及第一栅电极和第二栅电极的上表面形成。 形成覆盖缓冲层上的基板的第一区域的第一掩模图案。 使用第一掩模图案作为离子注入工艺的掩模，在第二栅电极的侧面的衬底中形成第一杂质区。

    Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same
    9.
    发明申请
    Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same 有权
    制造电容器的方法和使用其制造动态随机存取存储器件的方法

    公开(公告)号：US20080070361A1

    公开(公告)日：2008-03-20

    申请号：US11898667

    申请日：2007-09-14

    Applicant: Kwang-Sub Yoon ,  Jung-Hyeon Lee ,  Bong-Cheol Kim ,  Se-Young Park

    Inventor： Kwang-Sub Yoon ,  Jung-Hyeon Lee ,  Bong-Cheol Kim ,  Se-Young Park

    IPC: H01L21/8242 ,  H01L21/02

    CPC classification number: H01L28/91 ,  H01L27/10817 ,  H01L27/10852

    Abstract: In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.

    Abstract translation: 在制造电容器的方法和制造动态随机存取存储器件的方法中，覆盖导电层的上部的绝缘层可以设置有臭氧气体，以便改变绝缘材料的上部的性质 层。 可以化学去除绝缘层的上部以暴露导电层的上部。 可以去除暴露的导电层的上部，以便将导电层转变成下电极。 可以除去绝缘层的剩余部分，并且可以在下电极上形成上电极。

    PHOTOMASK INCLUDING FOCUS METROLOGY MARK, SUBSTRATE TARGET INCLUDING FOCUS MONITOR PATTERN, METROLOGY METHOD FOR LITHOGRAPHY PROCESS, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
    10.
    发明申请
    PHOTOMASK INCLUDING FOCUS METROLOGY MARK, SUBSTRATE TARGET INCLUDING FOCUS MONITOR PATTERN, METROLOGY METHOD FOR LITHOGRAPHY PROCESS, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE 有权
    包括重点计量标志的光电子，包括重点监测图案的基板目标，用于图像处理的计量方法以及制造集成电路装置的方法

    公开(公告)号：US20160033880A1

    公开(公告)日：2016-02-04

    申请号：US14700864

    申请日：2015-04-30

    Applicant: Ji-myung Kim ,  Yong-chul Kim ,  Young-sik Park ,  Kwang-sub Yoon

    Inventor： Ji-myung Kim ,  Yong-chul Kim ,  Young-sik Park ,  Kwang-sub Yoon

    IPC: G03F7/20 ,  H01L27/02 ,  H01L21/66

    CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F1/44 ,  H01L21/027 ,  H01L21/0274

    Abstract: A photomask includes a focus metrology mark region that includes a plurality of focus monitor patterns. To measure a focal variation of a feature pattern formed on a substrate, a substrate target for lithography metrology including a focus metrology mark formed on the same level as the feature pattern is used. A lithography metrology apparatus includes a projection device including a polarizer; a detection device detecting the powers of ±n-order diffracted light beams from among output beams diffracted by the focus metrology mark of a to-be-measured substrate; and a determination device which determines, from a power deviation between the ±n-order diffracted light beams, defocus experienced by the feature pattern.

    Abstract translation: 光掩模包括聚焦计量标记区域，其包括多个聚焦监视器图案。 为了测量形成在基板上的特征图案的焦点变化，使用包括与特征图案在同一水平上形成的焦点计量标记的光刻测量用基板目标。 光刻计量装置包括：投影装置，包括偏振器; 检测装置，通过待测基板的焦点计量标记，检测从衍射光的衍射光束中的±n级衍射光束的功率; 以及确定装置，其从±n级衍射光束之间的功率偏差确定由特征图案经历的散焦。

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