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    3-D nonvolatile memory device and method of manufacturing the same
    1.
    发明授权
    3-D nonvolatile memory device and method of manufacturing the same 有权
    3-D非易失性存储器件及其制造方法

    公开(公告)号：US09111797B2

    公开(公告)日：2015-08-18

    申请号：US13613839

    申请日：2012-09-13

    申请人： Eun Seok Choi ,  Hyun Seung Yoo

    发明人： Eun Seok Choi ,  Hyun Seung Yoo

    IPC分类号： H01L29/78 ,  H01L27/115 ,  H01L29/66 ,  H01L29/792

    CPC分类号： H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792

    摘要： A three-dimensional (3-D) nonvolatile memory device includes a support protruded from a surface of a substrate and configured to have an inclined sidewall; channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, bent along the inclined sidewall of the support, wherein each of the channel structures comprises a cell region and a contact region, and the channel layers are exposed in the contact region; select lines formed over the channel structures; and a pillar type channels coupled to respective channel layers at the contact region and penetrating the select lines.

    摘要翻译： 三维（3-D）非易失性存储器件包括从衬底的表面突出并被配置为具有倾斜侧壁的支撑件; 每个通道结构被配置为包括层间绝缘层和沟道层，所述层间绝缘层和沟道层交替堆叠在包括支撑件的基板上，沿着支撑件的倾斜侧壁弯曲，其中每个沟道结构包括单元区域和接触区域，并且沟道 层在接触区域中暴露; 选择在通道结构上形成的线; 以及在接触区域处耦合到相应通道层并穿透选择线的柱状通道。

    Nonvolatile memory device with vertical semiconductor pattern between vertical source lines
    2.
    发明授权
    Nonvolatile memory device with vertical semiconductor pattern between vertical source lines 有权
    在垂直源极线之间具有垂直半导体图案的非易失存储器件

    公开(公告)号：US09053977B2

    公开(公告)日：2015-06-09

    申请号：US13610781

    申请日：2012-09-11

    申请人： Eun-Seok Choi ,  Hyun-Seung Yoo

    发明人： Eun-Seok Choi ,  Hyun-Seung Yoo

    IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L29/66

    CPC分类号： H01L27/11573 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

    摘要： A non-volatile memory device in accordance with one embodiment of the present invention includes a substrate including a P-type impurity-doped region, a channel structure comprising a plurality of interlayer insulating layers that are alternately stacked with a plurality of channel layers on the substrate, a P-type semiconductor pattern that contacts sidewalls of the plurality of channel layers, wherein a lower end of the P-type semiconductor pattern contacts the P-type impurity-doped region, and source lines that are disposed at both sides of the P-type semiconductor pattern and contact the sidewalls of the plurality of channel layers.

    摘要翻译： 根据本发明的一个实施例的非易失性存储器件包括：包括P型杂质掺杂区的衬底，包括多个层间绝缘层的沟道结构，所述多个层间绝缘层交替层叠有多个沟道层 基板，与所述多个沟道层的侧壁接触的P型半导体图案，其中所述P型半导体图案的下端接触所述P型杂质掺杂区域，以及设置在所述P型掺杂区域的两侧的源极线 P型半导体图案并与多个沟道层的侧壁接触。

    3-dimensional non-volatile memory device and method of manufacturing the same
    3.
    发明授权
    3-dimensional non-volatile memory device and method of manufacturing the same 有权
    3维非易失性存储器件及其制造方法

    公开(公告)号：US08982621B2

    公开(公告)日：2015-03-17

    申请号：US13477479

    申请日：2012-05-22

    申请人： Eun Seok Choi

    发明人： Eun Seok Choi

    IPC分类号： G11C11/34 ,  H01L27/115 ,  H01L29/792 ,  G11C16/04

    CPC分类号： H01L29/66833 ,  G11C16/0483 ,  H01L21/28282 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/7926

    摘要： A non-volatile memory device comprising a plurality of strings each including a drain select transistor, drain-side memory cells, a pipe transistor, source-side memory cells, and a source select transistor coupled in series, wherein the plurality of strings are arranged in a first direction and a second direction, and the strings arranged in the second direction form each of string columns; a plurality of bit lines extended in the second direction and coupled to the drain select transistors of the strings included in each string column; and a plurality of source lines extended in the first direction and in common coupled to the source select transistors of strings adjacent to each other in the second direction, wherein strings included in one of the string columns are staggered in the first direction and each of the string columns are coupled to at least two of the bit lines.

    摘要翻译： 一种非易失性存储器件，包括多个串，每个串均包括漏极选择晶体管，漏极侧存储单元，管状晶体管，源极侧存储单元和串联耦合的源极选择晶体管，其中多个串排列 沿第一方向和第二方向，并且沿着第二方向布置的弦形成每个弦列; 多个位线在第二方向上延伸并耦合到每个串列中包括的串的漏极选择晶体管; 以及多个源极线，沿着第一方向延伸并且共同地耦合到在第二方向上彼此相邻的串的源选择晶体管，其中包括在串列之一中的串在第一方向上交错，并且每个 串列耦合到至少两个位线。

    Information input device and method and medium for inputting information in 3D space
    6.
    发明授权
    Information input device and method and medium for inputting information in 3D space 有权
    用于在3D空间中输入信息的信息输入设备和方法和介质

    公开(公告)号：US08411033B2

    公开(公告)日：2013-04-02

    申请号：US11898055

    申请日：2007-09-07

    申请人： Eun-seok Choi ,  Jun-il Sohn ,  Won-chul Bang

    发明人： Eun-seok Choi ,  Jun-il Sohn ,  Won-chul Bang

    IPC分类号： G06F3/033 ,  G09G5/08

    CPC分类号： G06F3/0481 ,  G06F3/017 ,  G06F3/0346 ,  G06F3/0383

    摘要： An information input device and a method and medium for inputting information in three-dimensional (3D) space are provided. The information input device includes a movement signal input unit receiving a movement signal of the information input device under control of a user in a three-dimensional (3D) space, a movement extent calculating unit calculating an extent of a movement of the information input device by analyzing the received movement signal, a movement identification unit identifying a type of the movement by comparing the calculated extent of the movement with a predetermined threshold, and a signal processor processing the received movement signal so that an instruction corresponding to the identified type of movement is performed.

    摘要翻译： 提供了一种用于在三维（3D）空间中输入信息的信息输入装置和方法和介质。 信息输入装置包括移动信号输入单元，其在三维（3D）空间中的用户的控制下接收信息输入装置的移动信号;移动范围计算单元，计算信息输入装置的移动程度 通过分析所接收到的移动信号，通过将所计算的移动程度与预定阈值进行比较来识别移动类型的移动识别单元，以及处理接收到的移动信号的信号处理器，使得与所识别的移动类型相对应的指令 被执行。

    3-DIMENSIONAL NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    3-DIMENSIONAL NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    三维非易失性存储器件及其制造方法

    公开(公告)号：US20120300547A1

    公开(公告)日：2012-11-29

    申请号：US13477479

    申请日：2012-05-22

    申请人： Eun Seok CHOI

    发明人： Eun Seok CHOI

    IPC分类号： G11C16/04 ,  H01L21/336

    CPC分类号： H01L29/66833 ,  G11C16/0483 ,  H01L21/28282 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/7926

    摘要： A non-volatile memory device comprising a plurality of strings each including a drain select transistor, drain-side memory cells, a pipe transistor, source-side memory cells, and a source select transistor coupled in series, wherein the plurality of strings are arranged in a first direction and a second direction, and the strings arranged in the second direction form each of string columns; a plurality of bit lines extended in the second direction and coupled to the drain select transistors of the strings included in each string column; and a plurality of source lines extended in the first direction and in common coupled to the source select transistors of strings adjacent to each other in the second direction, wherein strings included in one of the string columns are staggered in the first direction and each of the string columns are coupled to at least two of the bit lines.

    摘要翻译： 一种非易失性存储器件，包括多个串，每个串均包括漏极选择晶体管，漏极侧存储单元，管状晶体管，源极侧存储单元和串联耦合的源极选择晶体管，其中多个串排列 沿第一方向和第二方向，并且沿着第二方向布置的弦形成每个弦列; 多个位线在第二方向上延伸并耦合到每个串列中包括的串的漏极选择晶体管; 以及多个源极线，沿着第一方向延伸并且共同地耦合到在第二方向上彼此相邻的串的源选择晶体管，其中包括在串列之一中的串在第一方向上交错，并且每个 串列耦合到至少两个位线。

    INPUT DEVICE AND CONTROL METHOD THEREOF
    8.
    发明申请
    INPUT DEVICE AND CONTROL METHOD THEREOF 有权
    输入装置及其控制方法

    公开(公告)号：US20120019459A1

    公开(公告)日：2012-01-26

    申请号：US13052487

    申请日：2011-03-21

    申请人： Jong-bo MOON ,  Eun-seok CHOI ,  Ho-june YOO ,  Sang-on CHOI ,  Chang-soo NOH

    发明人： Jong-bo MOON ,  Eun-seok CHOI ,  Ho-june YOO ,  Sang-on CHOI ,  Chang-soo NOH

    IPC分类号： G06F3/041

    CPC分类号： G06F3/0418 ,  G06F3/04886

    摘要： A control method includes: receiving a user's input through a touch area of the input device; and recognizing the user's touch input to the touch area through a recognition area of the input device corresponding to the touch area and changing and assigning a range of the recognition area corresponding to the touch area according to a predetermined standard.

    摘要翻译： 控制方法包括：通过输入设备的触摸区域接收用户的输入; 以及通过与触摸区域相对应的输入设备的识别区域识别用户对触摸区域的触摸输入，并根据预定标准改变和分配对应于触摸区域的识别区域的范围。