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公开(公告)号:US08502313B2
公开(公告)日:2013-08-06
申请号:US13091578
申请日:2011-04-21
申请人: Rohit Dikshit , Mark L. Rinehimer , Michael D. Gruenhagen , Joseph A. Yedinak , Tracie Petersen , Ritu Sodhi , Dan Kinzer , Christopher L. Rexer , Fred C. Session
发明人: Rohit Dikshit , Mark L. Rinehimer , Michael D. Gruenhagen , Joseph A. Yedinak , Tracie Petersen , Ritu Sodhi , Dan Kinzer , Christopher L. Rexer , Fred C. Session
IPC分类号: H01L29/76
CPC分类号: H01L29/7813 , H01L24/05 , H01L29/41775 , H01L29/42372 , H01L29/7397 , H01L29/7455 , H01L29/7811 , H01L2224/04034 , H01L2224/04042 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2924/01327 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/01079 , H01L2924/00014 , H01L2924/01028 , H01L2924/01047 , H01L2924/01023 , H01L2924/01014 , H01L2924/01029 , H01L2924/00
摘要: This document discusses, among other things, a semiconductor device including a first metal layer coupled to a source region and a second metal layer coupled to a gate structure, wherein at least a portion of the first and second metal layers overlap vertically.
摘要翻译: 本文件尤其涉及包括耦合到源区的第一金属层和耦合到栅极结构的第二金属层的半导体器件,其中第一和第二金属层的至少一部分垂直重叠。
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公开(公告)号:US5435646A
公开(公告)日:1995-07-25
申请号:US149600
申请日:1993-11-09
IPC分类号: G01K7/16 , G01K7/22 , H01L21/22 , H01L21/265 , H01L21/66
CPC分类号: G01K7/22
摘要: The value of an unknown test temperature is measured by heating a test wafer (58) to the unknown temperature, measuring the surface electrical resistivity of the test wafer (58), and determining the value of the unknown temperature from the measured surface electrical resistivity. The test wafer (58) is prepared by providing an initial wafer (50), first ion implanting the initial wafer (50) with a first dose of an ionic species, and annealing the ion implanted initial wafer (50) at an annealing temperature. The preparation is completed by second ion implanting the annealed wafer with a second dose of the same ionic species as used in the first dose to form a test wafer, the second dose being lower than the first dose.
摘要翻译: 通过将测试晶片(58)加热到未知温度,测量测试晶片(58)的表面电阻率,并根据测量的表面电阻率确定未知温度的值,来测量未知测试温度的值。 通过提供初始晶片(50),首先用初始晶片(50)注入第一剂量的离子物质并在退火温度下退火离子注入的初始晶片(50)来制备测试晶片(58)。 通过用第一剂量中使用的相同离子物质的第二剂量通过第二离子注入退火晶片来完成制备,以形成测试晶片,第二剂量低于第一剂量。
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