Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
    2.
    发明授权
    Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same 有权
    光化射线敏感性或辐射敏感性树脂组合物和使用其的图案形成方法

    公开(公告)号:US08877423B2

    公开(公告)日:2014-11-04

    申请号:US13378387

    申请日:2010-06-30

    Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin that contains a repeating unit represented by formula (I) as defined in the specification, a repeating unit represented by formula (II) as defined in the specification and a repeating unit represented by formula (III-a) or (III-b) as defined in the specification; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a solvent, wherein the solvent (C) contains ethyl lactate, and a film and a pattern forming method using the composition are provided.

    Abstract translation: 一种光化射线敏感性或辐射敏感性树脂组合物,其包含:(A)含有本说明书中定义的式(I)表示的重复单元的树脂,由说明书中定义的式(II)表示的重复单元和 由本说明书中定义的式(III-a)或(III-b)表示的重复单元; (B)能够在用光化射线或辐射照射时能产生酸的化合物; 和(C)溶剂,其中溶剂(C)含有乳酸乙酯,并且提供使用该组合物的膜和图案形成方法。

    Pattern forming method, chemical amplification resist composition and resist film
    4.
    发明授权
    Pattern forming method, chemical amplification resist composition and resist film 有权
    图案形成方法,化学放大抗蚀剂组合物和抗蚀剂膜

    公开(公告)号:US08647812B2

    公开(公告)日:2014-02-11

    申请号:US13636834

    申请日:2011-03-18

    Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.

    Abstract translation: 一种图案形成方法,包括(i)从化学放大抗蚀剂组合物形成膜的步骤,(ii)曝光所述膜的步骤,以及(iii)通过使用含有机溶剂的显影剂使曝光的膜显影的步骤 ,其中抗蚀剂组合物含有(A)能够通过酸作用增加极性以降低对含有机溶剂的显影剂的溶解度的树脂,(B)至少一种能够产生磺酸的化合物 由光化射线或辐射照射时的具体式表示,和(C)溶剂。

    PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
    5.
    发明申请
    PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权
    图案形成方法,化学放大电阻组合物和电阻膜

    公开(公告)号:US20130011619A1

    公开(公告)日:2013-01-10

    申请号:US13636834

    申请日:2011-03-18

    Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.

    Abstract translation: 一种图案形成方法,包括(i)从化学放大抗蚀剂组合物形成膜的步骤,(ii)曝光所述膜的步骤,以及(iii)通过使用含有机溶剂的显影剂使曝光的膜显影的步骤 ,其中抗蚀剂组合物含有(A)能够通过酸作用增加极性以降低对含有机溶剂的显影剂的溶解度的树脂,(B)至少一种能够产生磺酸的化合物 由光化射线或辐射照射时的具体式表示,和(C)溶剂。

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