Abstract:
A resist composition includes a resin (A) containing any of repeating units (a) of general formulae (I-a) and (I-b) below and any of repeating units (b) of general formula (II) below but containing substantially no repeating unit in which an alcoholic hydroxyl group is introduced, and any of compounds (B) of general formulae (III-a) and (III-b) below.
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin that contains a repeating unit represented by formula (I) as defined in the specification, a repeating unit represented by formula (II) as defined in the specification and a repeating unit represented by formula (III-a) or (III-b) as defined in the specification; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a solvent, wherein the solvent (C) contains ethyl lactate, and a film and a pattern forming method using the composition are provided.
Abstract:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a specific compound represented by a general formula, (B) a resin which is alkali-insoluble or sparingly alkali-soluble and becomes easily alkali-soluble in the presence of an acid, and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; a film formed using the composition; and a pattern forming method using the same.
Abstract:
A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.
Abstract:
A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.
Abstract:
Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
Abstract:
According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.
Abstract:
Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧−1.5 when exposed to actinic rays or radiation.
Abstract:
Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ΔSP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. ΔSP=SPF−SPI (1)
Abstract:
Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.