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1.发明申请PARALLEL PLATE REACTOR FOR UNIFORM THIN FILM DEPOSITION WITH REDUCED TOOL FOOT-PRINT 有权平行平板反应器，用于均匀薄膜沉积与减少工具的打印公开(公告)号：US20120304933A1
公开(公告)日：2012-12-06
申请号：US13577701
申请日：2010-07-09
IPC分类号： C23C16/44
CPC分类号： H01J37/32449 , C23C16/45565 , C23C16/5096 , H01J37/32091
摘要： A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.
摘要翻译： 电容耦合平行板等离子体增强化学气相沉积反应器包括集成在RF电极中并形成有气体出口的气体分配单元。 平行板反应器被配置成能够产生具有高厚度均匀性和质量的层。 电容耦合平行板等离子体增强气相沉积反应器具有气体分配单元，其具有多级喷淋头，其构造成使得气体分配单元的气体分布和气体排放分布的独立调整。
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2.发明授权Parallel plate reactor for uniform thin film deposition with reduced tool foot-print 有权平行板反应器，用于均匀薄膜沉积，减少了工具脚印公开(公告)号：US09224581B2
公开(公告)日：2015-12-29
申请号：US13577701
申请日：2010-07-09
IPC分类号： H01J37/32 , C23C16/455 , C23C16/509
CPC分类号： H01J37/32449 , C23C16/45565 , C23C16/5096 , H01J37/32091
摘要： A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.
摘要翻译： 电容耦合平行板等离子体增强化学气相沉积反应器包括集成在RF电极中并形成有气体出口的气体分配单元。 平行板反应器被配置成能够产生具有高厚度均匀性和质量的层。 电容耦合平行板等离子体增强气相沉积反应器具有气体分配单元，其具有多级喷淋头，其构造成使得气体分配单元的气体分布和气体排放分布的独立调整。
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公开(公告)号：US20150101659A1
公开(公告)日：2015-04-16
申请号：US14401569
申请日：2013-05-06
IPC分类号： H01L31/0376 , H01L31/0224 , H01L31/20 , H01L31/072 , H01L31/065
CPC分类号： H01L31/0376 , H01L31/022425 , H01L31/022441 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/065 , H01L31/072 , H01L31/0747 , H01L31/20 , Y02E10/50
摘要： A hetero-contact solar cell has a front side provided for an incidence of solar radiation. The solar cell has an absorber of a crystalline semiconductor material of a first conductivity type, an amorphous semiconductor layer of the first conductivity type doped more highly than the absorber and an electrically conductive, transparent front side conduction layer provided on the amorphous semiconductor layer. A front side contact is provided on the solar cell and has spaced-apart contact structures. An emitter of a second conductivity type opposite to the first conductivity type is provided on a back side. A back side contact is arranged on the back side. The emitter-related absorption losses of the solar cells can be eliminated by the back side contact having a back side contact layer extending over the surface of the back side, and the front side conduction layer containing a specific resistance from 7×10−4 to 50×10−4 Ωcm.
摘要翻译： 异质接触太阳能电池具有用于太阳辐射入射的前侧。 太阳能电池具有第一导电类型的结晶半导体材料的吸收体，比吸收体掺杂的第一导电类型的非晶半导体层和设置在非晶半导体层上的导电，透明的前侧导电层。 前侧触点设置在太阳能电池上，并具有间隔开的接触结构。 与第一导电类型相反的第二导电类型的发射极设置在背面。 后侧接触件设置在背面。 太阳能电池的发射极相关的吸收损耗可以通过后侧接触而消除，该背面接触具有在背面的表面上延伸的背面接触层，并且前侧导电层的电阻率为7×10-4〜 50×10-4＆OHgr; cm。
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