公开(公告)号：US09397068B2

公开(公告)日：2016-07-19

申请号：US14354583

申请日：2012-12-04

申请人： Fei Qin ,  Guofeng Xia ,  Tong An ,  Wei Wu ,  Chengyan Liu ,  Wenhui Zhu

发明人： Fei Qin ,  Guofeng Xia ,  Tong An ,  Wei Wu ,  Chengyan Liu ,  Wenhui Zhu

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/14 ,  H01L23/52 ,  H01L23/28 ,  H01L23/498 ,  H01L23/31 ,  H01L25/03

CPC分类号： H01L24/85 ,  H01L21/4821 ,  H01L21/4828 ,  H01L21/56 ,  H01L21/561 ,  H01L23/142 ,  H01L23/28 ,  H01L23/3121 ,  H01L23/49544 ,  H01L23/49575 ,  H01L23/49861 ,  H01L23/52 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/03 ,  H01L2224/16245 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/0665 ,  H01L2224/05599

摘要： A manufacturing method for Package in Package (PiP) electronic device based on multi-row Quad Flat No-lead (QFN) package is provided wherein the lower surface of plate metallic base material are half-etched to form grooves. Insulation filling material is filled in the half-etched grooves. The upper surface of plate metallic base material is half-etched to form chip pad and multi-row of leads. Encapsulating IC chip for wire bonding, adhesive material, metal wire, chip pad and a plurality of leads to form a multi-row QFN package as an inner package. Flip-chip bonding IC chip with solder bumps on the first metal material layer of leads. Encapsulating IC chip with solder bumps, the multi-row QFN package, adhesive material, and leads to form an array of PiP electronic devices. Sawing and separating the PiP electronic device array, forming PiP electronic device unit.

摘要翻译： 提供了一种基于多行四方扁平无引线（QFN）封装的封装封装（PiP）电子器件的制造方法，其中板金属基材的下表面被半蚀刻以形成凹槽。 绝缘填充材料填充在半蚀刻槽中。 板金属基材的上表面被半刻蚀以形成芯片焊盘和多排引线。 用于引线接合的封装IC芯片，粘合材料，金属线，芯片焊盘和多个引线，以形成作为内部封装的多行QFN封装。 在芯片的第一个金属材料层引脚上的倒装芯片接合IC芯片与焊料凸块。 使用焊料凸块封装IC芯片，多行QFN封装，粘合剂材料，并形成PiP电子器件阵列。 锯切和分离PiP电子器件阵列，形成PiP电子器件单元。

公开(公告)号：US08951840B2

公开(公告)日：2015-02-10

申请号：US14354592

申请日：2012-12-04

申请人： Fei Qin ,  Guofeng Xia ,  Tong An ,  Chengyan Liu ,  Wei Wu ,  Wenhui Zhu

发明人： Fei Qin ,  Guofeng Xia ,  Tong An ,  Chengyan Liu ,  Wei Wu ,  Wenhui Zhu

IPC分类号： H01L21/00 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L21/4828 ,  H01L21/4825 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49861 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/92127 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45664

摘要： A manufacturing method for Flip Chip on Chip (FCoC) package based on multi-row Quad Flat No-lead (QFN) package is provided wherein the lower surface of plate metallic base material are half-etched to form grooves. Insulation filling material is filled in the half-etched grooves. The upper surface of plate metallic base material is half-etched to form chip pad and multi-row of leads. Encapsulating first IC chip, second IC chip, solder bumps, underfill material, and metal wire to form an array of FCoC package based on the type of multi-row QFN package. Sawing and separating the FCoC package array, and forming FCoC package unit.

摘要翻译： 提供了一种基于多行四边形扁平无引线（QFN）封装的倒装芯片（FCoC）封装的制造方法，其中板金属基材的下表面被半蚀刻以形成凹槽。 绝缘填充材料填充在半蚀刻槽中。 板金属基材的上表面被半刻蚀以形成芯片焊盘和多排引线。 封装第一个IC芯片，第二个IC芯片，焊料凸块，底部填充材料和金属线，以形成基于多行QFN封装类型的FCoC封装阵列。 锯切和分离FCoC封装阵列，并形成FCoC封装单元。