摘要:
A method and apparatus for real-time, simultaneous, qualitative measurement of one or more single nucleotide polymorphisms in one or more target nucleic acids is provided. This method involves combining a polymerase chain reaction (PCR) technique with an evanescent wave technique.
摘要:
A composite bipolar plate for a proton exchange membrane fuel cell (PEMFC) is prepared as follows: a) melt compounding a polypropylene resin and graphite powder to form a melt compounding material, the graphite powder content ranging from 50 wt % to 95 wt % based on the total weight of the melt compounding material and the polypropylene resin being a homopolymer of propylene or a random copolymer of propylene and ethylene, butylenes or hexalene, wherein 0.01-15 wt % of polymer-grafted carbon nanotubes by an acyl chlorination-amidization reaction, based on the weight of the polypropylene resin, are added during the compounding; and b) molding the melt compounding material from step a) to form a bipolar plates having a desired shaped at 100-250° C. and 500-4000 psi.
摘要:
A process for preparing a photoanode of dye-sensitized solar cells (DSSCs) is disclosed, which contains nano TiO2 and functionalized carbon nanomateiral. The process includes reacting a dispersion of functionalized carbon nanomateiral and a TiO2 precursor in a liquid organic medium under sol-gel conditions to form a carbon nanomaterial/nano TiO2 composite colloidal solution; mixing with an aqueous polymer solution, and forming a paste suitable for coating by concentrating the resulting mixture; coating the paste on a conductive glass substrate and calcining the coated layer at 300-520° C. in air for 10-60 minutes to obtain a conductive glass plate having a coating of nanocomposite, which can be used to prepare a photoanode of DSSCs by immersing in a dye solution to adsorb a dye thereon.
摘要:
A composite bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein carbon fiber 1-20 wt %, modified organo clay or noble metal plated modified organo clay 0.5-10 wt %, and one or more conductive fillers selected form: carbon nanotube (CNT) 0.1-5 wt %, nickel plated carbon fiber 0.5-10 wt %, nickel plated graphite 2.5-40 wt %, and carbon black 2-30 wt %, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a bipolar plate having a desired shaped at 80-200° C. and 500-4000 psi.
摘要:
This disclosure relates to systems and methods for reducing feature sizes. One of these methods enables formation of an original feature having a size in a length or width dimension of between about 100 and about 1000 nanometers with a system capable of patterning features to a minimum size of less than or about the size of the original feature and reduction of the size of the original feature below that of the minimum size of the system using an alignment-independent technique.
摘要:
A method of depositing polymer thin films on a MEMS device having a wafer stack includes depositing one or more protection films on a polymer thin film layer on the wafer stack, fabricating the MEMS device, and removing the one or more protection films.
摘要:
A transistor device includes a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region, the source region being more doped than the lightly doped layer. A drain region of the first type is formed in the lightly doped layer, the drain region being more doped than the lightly doped layer. A drift region of the lightly doped layer is further provided disposed between the body region and the drain region. Additionally, a gate electrode is provided surrounding the drain region. The gate electrode is partially disposed over a thin oxide and partially over a thick oxide, wherein the gate electrode extended over the thick oxide from the thin oxide controls the electric field in the drift region to increase the avalanche breakdown of the drain region.
摘要:
A graphite-vinyl ester resin composite conducting plate is prepared in the present invention. The conducting plate can be used as a bipolar plate for a fuel cell, counter electrode for dye-sensitized solar cell and electrode of vanadium redox battery. The conducting plate is prepared as follows: a) compounding vinyl ester resin and graphite powder to form a bulk molding compound (BMC) material, the graphite powder content ranging from 70 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-15 wt % functionalized graphene, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a conducting plate having a desired shaped at 80-250° C. and 500-4000 psi.
摘要:
A composite bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein carbon fiber 1-20 wt %, modified organo clay or noble metal plated modified organo clay 0.5-10 wt %, and one or more conductive fillers selected form: carbon nanotube (CNT) 0.1-5 wt %, nickel plated carbon fiber 0.5-10 wt %, nickel plated graphite 2.5-40 wt %, and carbon black 2-30 wt %, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a bipolar plate having a desired shaped at 80-200° C. and 500-4000 psi.
摘要:
A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.