公开(公告)号：US08924354B2

公开(公告)日：2014-12-30

申请号：US13018934

申请日：2011-02-01

申请人： Hector Wang ,  Haiyang Zhang ,  Shaorong Li ,  Guoxian Shang

发明人： Hector Wang ,  Haiyang Zhang ,  Shaorong Li ,  Guoxian Shang

IPC分类号： G06F7/00 ,  G06F17/00 ,  G06F11/14

CPC分类号： G06F11/1464 ,  G06F11/2038 ,  G06F11/2048 ,  G06F11/2097

摘要： Systems and methods for replicating data from a production server to a backup server include identifying one or more data blocks of a file that were modified after a first time instant and before a second time instant. The file may be associated with a protected directory of the production server. An representative data block (e.g., including a hash value) for at least one of the identified data blocks may be computed using a cryptography algorithm, e.g., MD5 or SHA-1. The computed cryptographic data block representing the identified data block may then be sent for replication to the backup server. An operation performed between the first time instant and the second time instant on one or more files of the protected directory may be recorded, and sent to the backup server.

摘要翻译： 用于将数据从生产服务器复制到备份服务器的系统和方法包括识别在第一时刻之后和在第二时刻之前被修改的文件的一个或多个数据块。 文件可能与生产服务器的受保护目录相关联。 可以使用密码算法（例如，MD5或SHA-1）来计算针对所识别的数据块中的至少一个的代表性数据块（例如，包括哈希值）。 然后可以发送表示所识别的数据块的所计算的加密数据块，以便复制到备份服务器。 可以记录在受保护目录的一个或多个文件上的第一时刻和第二时刻之间执行的操作，并将其发送到备份服务器。

公开(公告)号：US08502289B2

公开(公告)日：2013-08-06

申请号：US13324945

申请日：2011-12-13

申请人： Xinpeng Wang ,  Haiyang Zhang

发明人： Xinpeng Wang ,  Haiyang Zhang

IPC分类号： H01L29/76

CPC分类号： H01L29/66795 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/7855

摘要： The present invention discloses a double gate transistor and a method of fabricating said transistor, said transistor comprising: a semiconductor layer on a substrate; a fin structure formed in said semiconductor layer, said fin structure having two end portions for forming source and drain regions and a middle portion between said two end portions for forming a channel region, said middle portion including two opposed side surfaces perpendicular to a substrate surface; a first gate dielectric layer and a first gate disposed on one side surface of said middle portion; and a second gate dielectric layer and a second gate disposed on the other side surface of said middle portion.

摘要翻译： 本发明公开了一种双栅晶体管及其制造方法，所述晶体管包括：衬底上的半导体层; 在所述半导体层中形成的翅片结构，所述翅片结构具有用于形成源极和漏极区域的两个端部和用于形成沟道区域的所述两个端部之间的中间部分，所述中间部分包括垂直于衬底表面的两个相对的侧面 ; 第一栅极电介质层和设置在所述中间部分的一个侧表面上的第一栅极; 以及设置在所述中间部分的另一侧表面上的第二栅极电介质层和第二栅极。

公开(公告)号：US20130059438A1

公开(公告)日：2013-03-07

申请号：US13293979

申请日：2011-11-10

申请人： JUNQING ZHOU ,  XIAOYING MENG ,  HAIYANG ZHANG

发明人： JUNQING ZHOU ,  XIAOYING MENG ,  HAIYANG ZHANG

IPC分类号： H01L21/306 ,  B44C1/22 ,  B29C59/02

CPC分类号： H01L21/0332 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  H01L21/0337 ,  H01L21/0338

摘要： A pattern formation method, mask pattern formation method and a method for manufacturing semiconductor devices are provided in this disclosure, which are directed to the field of semiconductor processes. The pattern formation method comprises: providing a substrate; forming a polymer thin film containing a block copolymer on the substrate; forming a first pattern through imprinting the polymer thin film with a stamp; forming domains composed of different copolymer components through directed self assembly of the copolymer in the first pattern; selectively removing the domains composed of copolymer components to form a second pattern. In the embodiments of the present invention, finer pitch patterns can be obtained through combining the imprinting and DSA process without exposure, which as compared to the prior art methods has the advantage of simplicity. Furthermore, stamps used in imprinting may have relative larger pitches, facilitating and simplifying the manufacture and alignment of the stamps.

摘要翻译： 在本公开中提供了图案形成方法，掩模图案形成方法和半导体器件的制造方法，其涉及半导体工艺领域。 图案形成方法包括：提供基板; 在基材上形成含有嵌段共聚物的聚合物薄膜; 通过用印模压印聚合物薄膜来形成第一图案; 通过在第一图案中共聚物的定向自组装形成由不同共聚物组分组成的畴; 选择性地除去由共聚物组分组成的畴以形成第二图案。 在本发明的实施例中，可以通过组合压印和DSA处理而不曝光来获得更细的间距图案，与现有技术的方法相比，其简单性优点。 此外，在印记中使用的邮票可以具有相对更大的间距，便于和简化邮票的制造和对准。

公开(公告)号：US20130054529A1

公开(公告)日：2013-02-28

申请号：US13216737

申请日：2011-08-24

申请人： Xiaopin Wang ,  Haiyang Zhang ,  Shaorong Li

发明人： Xiaopin Wang ,  Haiyang Zhang ,  Shaorong Li

IPC分类号： G06F17/30

CPC分类号： G06F17/30088 ,  G06F11/1448 ,  G06F2201/82 ,  G06F2201/84

摘要： Systems and methods for generating a bookmark for a snapshot of one or more volumes of a production server include initiating a snapshot process to capture a shadow copy of a snapshot-volume set, which includes one or more volumes of the production server. The snapshot process (e.g., Volume Shadow Copy Service of Windows™ operating system) may include (a) temporarily freezing operations on a file system of the production server, and (b) releasing a freeze of operations on the file system of the production server. A bookmark for the shadow copy (representing a consistent state of the associated volumes) may be generated such that the bookmark corresponds to a completion of the temporarily freezing or releasing a freeze of the operations. The bookmark may include a point in time of the completion of the temporarily freezing or releasing the freeze of the operations.

摘要翻译： 用于生成一个或多个卷的生产服务器的快照的书签的系统和方法包括启动快照过程以捕获快照卷集的卷影副本，其包括生产服务器的一个或多个卷。 快照过程（例如，Windows TM操作系统的卷影复制服务）可以包括（a）临时冻结在生产服务器的文件系统上的操作，以及（b）释放对生产服务器的文件系统的操作冻结 。 可以生成卷影副本的书签（表示相关联的卷的一致状态），使得书签对应于完成暂时冻结或释放操作的冻结。 书签可以包括暂时冻结或释放操作冻结的时间点。

公开(公告)号：US20130034960A1

公开(公告)日：2013-02-07

申请号：US13310365

申请日：2011-12-02

申请人： MINDA HU ,  DONGJIANG WANG ,  HAIYANG ZHANG

发明人： MINDA HU ,  DONGJIANG WANG ,  HAIYANG ZHANG

IPC分类号： H01L21/308

CPC分类号： H01L21/0273 ,  G03F7/40

摘要： The present invention discloses a method of fabricating a semiconductor device. In the present invention, after the formation of a photo-resist mask on a substrate, the photo-resist is subjected to a plasma pre-treatment, and then etch is conducted. With the plasma pre-treatment, a line width roughness of a linear pattern of the photo-resist can be improved, and thus much better linear patterns can be formed on the substrate during the subsequent etching steps.

摘要翻译： 本发明公开了一种制造半导体器件的方法。 在本发明中，在基板上形成光致抗蚀剂掩模之后，对光致抗蚀剂进行等离子体预处理，然后进行蚀刻。 通过等离子体预处理，能够提高光刻胶的线状图案的线宽粗糙度，能够在随后的蚀刻工序中在基板上形成更好的线状图形。

公开(公告)号：US08367554B2

公开(公告)日：2013-02-05

申请号：US13208892

申请日：2011-08-12

申请人： Qiuhua Han ,  Haiyang Zhang ,  Qingtian Ma

发明人： Qiuhua Han ,  Haiyang Zhang ,  Qingtian Ma

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28035 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/76224

摘要： A method for forming a gate, which can improve the etching uniformity of the sidewalls of the gate, includes the following steps: forming a dielectric layer on a semiconductor substrate; forming a polysilicon layer on the dielectric layer; etching the polysilicon layer; performing an isotropic plasma etching process on the etched polysilicon layer by using a mixed gases containing a fluorine-based gas and oxygen gas; and cleaning the semiconductor substrate subjected to the isotropic plasma etching process, thereby forming a gate. The present invention further provides a method for forming a shallow trench isolation region, which can improve the filling quality of a subsequent spacer and the electrical properties of the resultant shallow trench isolation region, and a method for planarizing an etched surface of silicon substrate, which can improve the etching uniformity of the surface of silicon substrate.

公开(公告)号：US20120273923A1

公开(公告)日：2012-11-01

申请号：US13243944

申请日：2011-09-23

申请人： Xiaoying Meng ,  Junqing Zhou ,  Haiyang Zhang

发明人： Xiaoying Meng ,  Junqing Zhou ,  Haiyang Zhang

IPC分类号： H01L29/02 ,  H01L21/308

CPC分类号： C23C14/0036 ,  C23C14/0005 ,  C23C14/0641 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/32135 ,  H01L21/32137 ,  H01L29/42376

摘要： A method of manufacturing semiconductor device and a wafer are provided in accordance with embodiments of the present invention, which relates to semiconductor technology. The method includes: providing a substrate, and forming a gate oxide layer and a polysilicon layer on a first surface of the substrate; etching the polysilicon layer by use of a patterned mask so as to form a polysilicon gate with reentrants; depositing a tensile stress film on a second surface of the substrate before etching the polysilicon layer. The tensile stress film can be deposited on the second surface of the substrate for generating the tensile stress for the wafer. Thus, a polysilicon gate with reentrants can be formed in etching process. In this way, semiconductor devices can have smaller gate-source/drain overlap capacitance and better TDDB parameters, and the performance of the devices can be improved.

摘要翻译： 根据涉及半导体技术的本发明的实施例，提供一种制造半导体器件和晶片的方法。 该方法包括：提供衬底，并在衬底的第一表面上形成栅极氧化物层和多晶硅层; 通过使用图案化掩模蚀刻多晶硅层，以形成具有折入物的多晶硅栅极; 在蚀刻多晶硅层之前，在基板的第二表面上沉积拉伸应力膜。 拉伸应力膜可以沉积在基板的第二表面上，以产生晶片的拉伸应力。 因此，可以在蚀刻工艺中形成具有折入物的多晶硅栅极。 以这种方式，半导体器件可以具有更小的栅极/漏极重叠电容和更好的TDDB参数，并且可以提高器件的性能。

公开(公告)号：US09588858B2

公开(公告)日：2017-03-07

申请号：US12955299

申请日：2010-11-29

申请人： Xiaopin Wang ,  Haiyang Zhang ,  Shaorong Li

发明人： Xiaopin Wang ,  Haiyang Zhang ,  Shaorong Li

IPC分类号： G06F7/00 ,  G06F17/00 ,  G06F11/20 ,  G06F11/16

CPC分类号： G06F11/2038 ,  G06F11/1464 ,  G06F11/1662 ,  G06F11/2097 ,  G06F17/30575 ,  G06F2201/84 ,  H04L67/1095

摘要： Systems and methods for replicating data from a production server to a backup server include recording at least one operation on one or more data items stored in a volume of a production server. The operation may be recorded as at least one journal event in a memory. A determination may then be made regarding whether a system malfunction incident has occurred in the production server and if so, a first set of journal events may be transferred from the memory to an auxiliary storage at a first time instant. At a second time instant, a second set of journal events recorded in the memory between the first and second time instants may be transferred to the auxiliary storage. At one journal event stored in the auxiliary storage unit may then be sent for replication to a backup server.

摘要翻译： 用于将数据从生产服务器复制到备份服务器的系统和方法包括在存储在生产服务器的卷中的一个或多个数据项上记录至少一个操作。 该操作可以被记录在存储器中的至少一个日志事件。 然后可以确定在生产服务器中是否发生了系统故障事件，如果是，则可以在第一时刻将第一组日志事件从存储器传送到辅助存储器。 在第二时刻，记录在第一和第二时刻之间的存储器中的第二组日志事件可以被传送到辅助存储器。 然后可以将存储在辅助存储单元中的一个日志事件发送到备份服务器进行复制。

公开(公告)号：US08805847B2

公开(公告)日：2014-08-12

申请号：US12775066

申请日：2010-05-06

申请人： Xiaopin (Hector) Wang ,  Haiyang Zhang ,  Shaorong Li

发明人： Xiaopin (Hector) Wang ,  Haiyang Zhang ,  Shaorong Li

IPC分类号： G06F7/00 ,  G06F17/30

CPC分类号： G06F17/30144 ,  G06F11/1453 ,  G06F2201/84

摘要： Journal event consolidation extracts events occurring between two predetermined point in time on data volume, categorizes the events into categories of events, and consolidates the events in the categories of events.

摘要翻译： 日记事件整合提取事件发生在数据量的两个预定时间点之间的事件，将事件分类为事件的类别，并将事件的类别合并在一起。

公开(公告)号：US08753930B2

公开(公告)日：2014-06-17

申请号：US13326275

申请日：2011-12-14

申请人： Xiaoying Meng ,  Junqing Zhou ,  Haiyang Zhang

发明人： Xiaoying Meng ,  Junqing Zhou ,  Haiyang Zhang

IPC分类号： H01L21/302 ,  H01L21/336 ,  H01L21/461

CPC分类号： H01L21/31138

摘要： A method of manufacturing a semiconductor device comprises placing a semiconductor substrate in an ashing chamber, the semiconductor substrate having a gate, a silicon nitride gate sidewall offset spacer or a silicon nitride gate sidewall pacer formed thereon, and a photo resist residue remaining on the semiconductor substrate, introducing a gas mixture including D2 or T2 into the ashing chamber, and ashing the photo resist residue using a plasma that is formed from the gas mixture. The gas mixture can include a deuterium gas or a tritium gas having a volume ratio ranging between about 1% and about 20%. Embodiments can reduce Si recess and the loss of silicon nitride thin film during ashing.

摘要翻译： 一种制造半导体器件的方法包括将半导体衬底放置在灰化室中，所述半导体衬底具有形成在其上的栅极，氮化硅栅极侧壁偏移间隔物或氮化硅栅极侧壁起搏器以及保留在半导体上的光致抗蚀剂残留物 将包括D2或T2的气体混合物引入灰化室，以及使用由气体混合物形成的等离子体使光致抗蚀剂残渣灰化。 气体混合物可以包括体积比在约1％和约20％之间的氘气或氚气体。 实施例可以减少Si凹陷和灰化期间氮化硅薄膜的损失。