Abstract:
A semiconductor apparatus including: a substrate; and a semiconductor chip mounted on the substrate, wherein the substrate has plural holes, and the plural holes are provided such that the density on a substrate surface of the holes in a first area, which is an area of the substrate facing a semiconductor chip peripheral portion, is higher than the density on the substrate surface of the holes in an area excluding the first area on the substrate.
Abstract:
An analyzing method includes acquiring displacements with respect to loads applied of the test piece measured by the three-point bending test; calculating a first approximate expression of a relation of the displacements with respect to the loads applied in a first area where the relation is linear so as to determine an elasticity modulus of the test piece; extracting boundary value of a relation of strains caused by the displacements with respect to the loads so as to determine a yield stress value of the test piece; and calculating a second approximate expression of a relation of stress caused by the loads with respect to the strains caused by the displacements in a second area beyond the yield stress value on the basis of the yield stress value, the elasticity modulus, and the measurements in the second area.
Abstract:
The distortion of each node is calculated from the distortions of respective elements in the finite element analysis result of a global model of a structure, and a second-order coefficient of a quadratic function representing the displacement at each node of a micro model is calculated from distortions of respective nodes. In addition, a constant term and a first-order coefficient of the quadratic function are calculated from the displacements of the respective nodes of the global model. Then, the displacement at each boundary node of the micro model is calculated using the obtained quadratic function and a finite element analysis of the micro model is performed.
Abstract:
When reliability evaluation of the whole electronic package is performed, the time required for simulation is decreased, while solder connection parts, in particular, are accurately analyzed. The whole analysis model creating unit creates a solder connection part model which has the same volume, height, and connection area as the volume, height, and connection area of the solder connection part. By means of dividing the solder connection model into multiple meshes, the first mesh data for use in electronic package analysis is created.
Abstract:
An apparatus for predicting a deformation of a board includes a board dividing unit that divides the board into a plurality of areas based on wiring information on the board; and a deformation predicting unit that grasps a wiring pattern of an area macroscopically, calculates an equivalent physical property value equivalent to a modulus of longitudinal elasticity and a coefficient of thermal expansion by a finite element method, and predicts the deformation of the board based on the equivalent physical property value calculated for each of the areas divided by the board dividing unit.
Abstract:
The analysis model generation unit generates an analysis model for use in an analysis by a finite-element method. A stress distortion analysis unit analyzes a stress and a distortion occurring in finite elements of a continuum by a load using the analysis model for each load cycle cyclically applied to the continuum by the finite-element method. An element damage evaluation unit evaluates a damage by the distortion on the finite elements of the continuum based on the analysis result for each load cycle. A crack growth display unit displays the growth of a crack occurring in the continuum based on a result of the evaluation of the damage.
Abstract:
When reliability evaluation of the whole electronic package is performed, the time required for simulation is decreased, while solder connection parts, in particular, are accurately analyzed. The whole analysis model creating unit creates a solder connection part model which has the same volume, height, and connection area as the volume, height, and connection area of the solder connection part. By means of dividing the solder connection model into multiple meshes, the first mesh data for use in electronic package analysis is created.
Abstract:
An element damage determination unit calculates a cumulative value of a damage value using a Manson-Coffin law for a plurality of finite elements of a continuum based on a result of a stress/distortion analyzing process, and determines whether or not the cumulative value of the damage value is equal to or exceeds a threshold. A calculation unit obtains first correspondence information indicating the correspondence between the number of cycles of a load and a growth rate of a crack occurring in the continuum based on the determination result. A Manson-Coffin law change unit changes a Manson-Coffin law based on the first correspondence information and second correspondence information indicating the correspondence between an actual measurement value of the number of cycles of a load applied to the continuum and an actual measurement value of the growth rate of a crack occurring in the continuum at that time.
Abstract:
A contact pin includes: a pin terminal secured to a stationary base art by press-fitting a press-fitted part into the stationary base part, the pin terminal projecting from the stationary base part and being joined to the board; a contact part inserted into a contact pin through-hole of a movable lock part so that a plug pin terminal is fitted into the contact part; and an auxiliary plate 6 reinforcing the press-fitted part, engaged with the movable lock part and transmitting a force caused by a movement of the movable lock part to the press-fitted part. A connector constructed in the described manner includes a plurality of above-mentioned contact pins.
Abstract:
A semiconductor apparatus including: a substrate; and a semiconductor chip mounted on the substrate, wherein the substrate has plural holes, and the plural holes are provided such that the density on a substrate surface of the holes in a first area, which is an area of the substrate facing a semiconductor chip peripheral portion, is higher than the density on the substrate surface of the holes in an area excluding the first area on the substrate.