Abstract:
When reliability evaluation of the whole electronic package is performed, the time required for simulation is decreased, while solder connection parts, in particular, are accurately analyzed. The whole analysis model creating unit creates a solder connection part model which has the same volume, height, and connection area as the volume, height, and connection area of the solder connection part. By means of dividing the solder connection model into multiple meshes, the first mesh data for use in electronic package analysis is created.
Abstract:
When reliability evaluation of the whole electronic package is performed, the time required for simulation is decreased, while solder connection parts, in particular, are accurately analyzed. The whole analysis model creating unit creates a solder connection part model which has the same volume, height, and connection area as the volume, height, and connection area of the solder connection part. By means of dividing the solder connection model into multiple meshes, the first mesh data for use in electronic package analysis is created.
Abstract:
An apparatus for predicting a deformation of a board includes a board dividing unit that divides the board into a plurality of areas based on wiring information on the board; and a deformation predicting unit that grasps a wiring pattern of an area macroscopically, calculates an equivalent physical property value equivalent to a modulus of longitudinal elasticity and a coefficient of thermal expansion by a finite element method, and predicts the deformation of the board based on the equivalent physical property value calculated for each of the areas divided by the board dividing unit.
Abstract:
An apparatus for predicting a deformation of a board includes a board dividing unit that divides the board into a plurality of areas based on wiring information on the board; and a deformation predicting unit that grasps a wiring pattern of an area macroscopically, calculates an equivalent physical property value equivalent to a modulus of longitudinal elasticity and a coefficient of thermal expansion by a finite element method, and predicts the deformation of the board based on the equivalent physical property value calculated for each of the areas divided by the board dividing unit.
Abstract:
A semiconductor apparatus including: a substrate; and a semiconductor chip mounted on the substrate, wherein the substrate has plural holes, and the plural holes are provided such that the density on a substrate surface of the holes in a first area, which is an area of the substrate facing a semiconductor chip peripheral portion, is higher than the density on the substrate surface of the holes in an area excluding the first area on the substrate.
Abstract:
The distortion of each node is calculated from the distortions of respective elements in the finite element analysis result of a global model of a structure, and a second-order coefficient of a quadratic function representing the displacement at each node of a micro model is calculated from distortions of respective nodes. In addition, a constant term and a first-order coefficient of the quadratic function are calculated from the displacements of the respective nodes of the global model. Then, the displacement at each boundary node of the micro model is calculated using the obtained quadratic function and a finite element analysis of the micro model is performed.
Abstract:
An element damage determination unit calculates a cumulative value of a damage value using a Manson-Coffin law for a plurality of finite elements of a continuum based on a result of a stress/distortion analyzing process, and determines whether or not the cumulative value of the damage value is equal to or exceeds a threshold. A calculation unit obtains first correspondence information indicating the correspondence between the number of cycles of a load and a growth rate of a crack occurring in the continuum based on the determination result. A Manson-Coffin law change unit changes a Manson-Coffin law based on the first correspondence information and second correspondence information indicating the correspondence between an actual measurement value of the number of cycles of a load applied to the continuum and an actual measurement value of the growth rate of a crack occurring in the continuum at that time.
Abstract:
A semiconductor device that includes a semiconductor element, a package substrate, and a plurality of bonding members. The semiconductor element is fixed on the front surface of the package substrate. The package substrate has a first region and a second region on the back surface. The plurality of bonding members is arranged in a grid pattern on the first region of the back surface of the package substrate. The second region of the package substrate defines a bonding prohibition region corresponding with the periphery of the semiconductor element in a plan view.
Abstract:
The distortion of each node is calculated from the distortions of respective elements in the finite element analysis result of a global model of a structure, and a second-order coefficient of a quadratic function representing the displacement at each node of a micro model is calculated from distortions of respective nodes. In addition, a constant term and a first-order coefficient of the quadratic function are calculated from the displacements of the respective nodes of the global model. Then, the displacement at each boundary node of the micro model is calculated using the obtained quadratic function and a finite element analysis of the micro model is performed.
Abstract:
A semiconductor apparatus including: a substrate; and a semiconductor chip mounted on the substrate, wherein the substrate has plural holes, and the plural holes are provided such that the density on a substrate surface of the holes in a first area, which is an area of the substrate facing a semiconductor chip peripheral portion, is higher than the density on the substrate surface of the holes in an area excluding the first area on the substrate.