公开(公告)号：US20110219246A1

公开(公告)日：2011-09-08

申请号：US13036495

申请日：2011-02-28

申请人： HIROKI ARAI

发明人： HIROKI ARAI

IPC分类号： G06F1/32

CPC分类号： G06F1/32 ,  Y02D10/24

摘要： An information processing unit includes a processing unit including a plurality of processor cores; and a power consumption reduction device configured to reduce power consumption of the processing unit. The power consumption reduction device measures the loads on threads that are running in the plurality of cores; checks the number of high load threads which are threads in a high load state and the number of low load threads which are threads in a low load state for each core, on the basis of the measuring results; selects, when there exists a core having high load threads whose number is less than a preset threshold on the number of high load threads, the core as a candidate core; and replaces the high load threads existing in the candidate core with the low load threads existing in other cores when the total number of the low load threads in a core other than the candidate core is not less than the number of the high load threads in the candidate core.

摘要翻译： 信息处理单元包括：处理单元，包括多个处理器核; 以及功耗降低装置，被配置为降低处理单元的功耗。 功耗降低装置测量在多个芯中运行的线程上的负载; 基于测量结果，检查处于高负载状态的线程的高负载线数和每个核心处于低负载状态的线程的低负载线程的数量; 当存在具有高负载线程数目大于预设阈值的高负载线程的核心作为候选核心时，选择所述核心作为候选核心; 并且当候选核心之外的核心中的低负载线程的总数不小于所述候选核心中的高负载线程的数量时，用存在于其他核心中的低负载线程替换候选核心中存在的高负载线程 候选人核心。

公开(公告)号：US20090286928A1

公开(公告)日：2009-11-19

申请号：US12270687

申请日：2008-11-13

申请人： Tatsuhiro TAKAHASHI ,  Noriyuki Kuramoto ,  Koichiro Yonetake ,  Osamu Haba ,  Hiroshi Awano ,  Hiroki Arai ,  Teruya Goto ,  Yushi Yamaguchi ,  Naoya Nishimura ,  Masahiro Hida ,  Masaaki Ozawa ,  Mitsunobu Matsumura

发明人： Tatsuhiro TAKAHASHI ,  Noriyuki Kuramoto ,  Koichiro Yonetake ,  Osamu Haba ,  Hiroshi Awano ,  Hiroki Arai ,  Teruya Goto ,  Yushi Yamaguchi ,  Naoya Nishimura ,  Masahiro Hida ,  Masaaki Ozawa ,  Mitsunobu Matsumura

IPC分类号： C08L77/06 ,  C08G69/26

CPC分类号： C08G73/0266 ,  B82Y30/00 ,  B82Y40/00 ,  C08K7/24

摘要： Chemically modified carbon nanotubes composed of carbon nanotubes (such as multiwall carbon nanotubes) having carboxyl groups on the surface thereof and polymeric aniline (such as 3- to 300-meric aniline) bonding thereto through the amide linkage. The chemically modified carbon nanotubes exhibit good affinity with organic solvents and readily disperse into organic solvents.

摘要翻译： 由其表面具有羧基的碳纳米管（例如多壁碳纳米管）和通过酰胺键与其结合的聚合苯胺（例如3-至300-聚对苯胺）构成的化学改性的碳纳米管。 化学改性的碳纳米管与有机溶剂呈现良好的亲和性，易分散于有机溶剂中。

公开(公告)号：US20090022980A1

公开(公告)日：2009-01-22

申请号：US11826470

申请日：2007-07-16

申请人： Teruhiko Sugimoto ,  Rikuta Murakami ,  Mitsuru Takeuchi ,  Yasuhiro Arai ,  Hiroki Arai ,  Kaoru Arai ,  Yasuharu Kida

发明人： Teruhiko Sugimoto ,  Rikuta Murakami ,  Mitsuru Takeuchi ,  Yasuhiro Arai ,  Hiroki Arai ,  Kaoru Arai ,  Yasuharu Kida

IPC分类号： B32B5/16 ,  B05D1/36

CPC分类号： B05D7/14 ,  B05D1/02 ,  B05D5/00 ,  B05D5/02 ,  B05D7/54 ,  B05D2602/00 ,  E04C5/015 ,  E04C5/03 ,  Y10T428/254

摘要： The present invention provides a reinforcing bar material coated with a high adhesion anticorrosion film that enables to increase adhesion strength to concrete, which comprises forming two layers of anticorrosion films on a surface of a reinforcing bar material by means of spraying an epoxy powder coating material under a temperature condition where performance of the epoxy resin can be retained, so as to solve a pin hole problem that inevitably occurs in an anticorrosion film, and also to exhibit firm projections in a state coated with the epoxy resin on the second layer of anticorrosion film.The present invention comprises heating a reinforcing bar material, spraying and melt-adhering an epoxy powder coating material onto the reinforcing bar material while a temperature on a surface of the reinforcing bar material is between 200 and 250° C. so as to form a first anticorrosion film, and also, under this temperature condition, spraying and melt-adhering an epoxy powder coating material with acrylic resin beads having a particle diameter 2.5 to 3 times that of the epoxy resin powder mixed in on a surface of the first anticorrosion film in a molten state so as to form a second anticorrosion film, followed by cooling the reinforcing bar material coated with the first and second anticorrosion films to prepare the reinforcing bar material coated with a high adhesion anticorrosion film having countless projections formed by the second anticorrosion film.

摘要翻译： 本发明提供一种涂覆有高粘合性防腐蚀膜的钢筋材料，其能够增加对混凝土的粘合强度，其包括在钢筋材料的表面上通过喷涂环氧粉末涂料来形成两层防腐蚀膜 可以保持环氧树脂的性能的温度条件，以解决在防腐蚀膜中不可避免地发生的针孔问题，并且在涂覆有环氧树脂的状态下在第二层防腐膜上显示出牢固的突起 。 本发明包括加热钢筋材料，将环氧粉末涂料喷涂和熔融粘附到钢筋材料上，同时钢筋材料表面的温度在200-250℃之间，以形成第一 并且在该温度条件下，将环氧粉末涂料与在第一防腐蚀膜的表面上混合的环氧树脂粉末的粒径为2.5〜3倍的丙烯酸树脂珠喷雾和熔融粘合 熔融状态以形成第二防腐蚀膜，然后冷却涂覆有第一和第二防腐蚀膜的钢筋材料，以制备涂覆有具有由第二防腐蚀膜形成的无数突起的高粘附性防腐蚀膜的钢筋材料。

公开(公告)号：US20070033299A1

公开(公告)日：2007-02-08

申请号：US11495733

申请日：2006-07-31

申请人： Hiroki Arai

发明人： Hiroki Arai

IPC分类号： G06F3/00 ,  G06F13/00

CPC分类号： H04N1/32561 ,  G06F9/4405 ,  G06F15/177 ,  H04N1/00954 ,  H04N1/0096 ,  H04N1/32587 ,  H04N1/32593

摘要： In the information processing device of the invention, the region to be scanned is divided and assigned into as many parts as there are CPUs installed in the information processing device, each CPU scans hardware resources under its control respectively, and the main CPU integrates the scanning result at the end. According to the invention, the time necessary to scan the hardware resource can be reduced, and the startup time of the information processing device can also be reduced.

摘要翻译： 在本发明的信息处理装置中，要扫描的区域被划分成与安装在信息处理装置中的CPU一样多的部分，每个CPU分别扫描其控制的硬件资源，并且主CPU将扫描 结果结束了。 根据本发明，可以减少扫描硬件资源所需的时间，并且还可以减少信息处理装置的启动时间。

公开(公告)号：US06586163B1

公开(公告)日：2003-07-01

申请号：US09587359

申请日：2000-06-02

申请人： Ichiro Okabe ,  Hiroki Arai

发明人： Ichiro Okabe ,  Hiroki Arai

IPC分类号： G03F700

CPC分类号： G03F7/091 ,  G03F7/0045 ,  G03F7/16

摘要： There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system. The method further includes a step of depositing a silicon-oxide-based film immediately below the photoresist. The silicon-oxide-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.

摘要翻译： 描述了一种形成精细图案的方法，其目的在于沉积即使在高温下也是稳定且涉及小的内应力的氮化硅基抗反射膜。 该方法还旨在防止在防反射膜上形成化学放大的正抗蚀剂图案时光致抗蚀剂和基板之间的边界表面中的基脚图案（圆角）的发生。 该方法包括以下步骤：通过另一层直接在衬底或衬底上形成氮化硅基膜; 以及通过另一层在氮化硅基膜或氮化硅基膜上直接形成光致抗蚀剂。 通过使用等离子体CVD系统，将基板的位置的温度设定为400〜700℃的范围，来沉积氮化硅基膜。 该方法还包括在光致抗蚀剂正下方沉积氧化硅基膜的步骤。 通过使用等离子体CVD系统，将基板的位置的温度设定为400〜700℃的范围内，沉积硅氧化物系膜。

公开(公告)号：US07520244B2

公开(公告)日：2009-04-21

申请号：US10807528

申请日：2004-03-23

申请人： Takayuki Yamagishi ,  Hiroki Arai ,  Kiyoshi Satoh

发明人： Takayuki Yamagishi ,  Hiroki Arai ,  Kiyoshi Satoh

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC分类号： C23C16/5096 ,  C23C16/36 ,  C23C16/401 ,  C23C16/45565 ,  H01J37/32082 ,  H01J37/32183

摘要： A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.

摘要翻译： 用于薄膜沉积的等离子体处理装置包括反应室; 设置在所述室内的一对平行板电极; 以及用于经由设置在所述平行电极中的一个上的多个供给点将射频功率发送到平行板电极中的一个的射频电源系统。 射频电源系统包括射频传输单元，其包括入口传输路径和从入口传输路径多次分支的多个分支。 每个分支连接到供电点并且具有基本相等的特征阻抗值。

公开(公告)号：US07504915B2

公开(公告)日：2009-03-17

申请号：US11444525

申请日：2006-06-01

申请人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

发明人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

IPC分类号： H01H51/22 ,  H01H67/02

CPC分类号： H01H50/642 ,  H01H50/023 ,  H01H50/026 ,  H01H50/043 ,  H01H50/14 ,  H01H50/24 ,  H01H2050/028 ,  H01H2050/044

摘要： An electromagnetic block and a movable block are attached onto a base in an inclination attitude. Contact mechanisms press-fitted from above the base are laterally arranged in the inclination attitude, and the contact mechanisms are arranged in parallel in upper and lower stages. Idle end portions of movable contact pieces in the contact mechanisms are latched in a card which is linearly moved in a lateral direction. Terminals are projected downward from a bottom surface of the base, one of the terminals is connected to the fixed contact pieces of the contact mechanism, and the other terminal is connected to the movable contact pieces of the contact mechanism. The upper contact mechanism and the lower contact mechanism are alternately arranged in the lateral direction.

摘要翻译： 电磁块和可移动块以倾斜姿态附接到基座上。 从底座上方压入的接触机构以倾斜姿态横向排列，并且接触机构在上下平行地布置。 接触机构中的可动接触片的空转端部被锁定在沿横向方向线性移动的卡中。 端子从基座的底面向下突出，其中一个端子连接到接触机构的固定接触片，另一个端子连接到接触机构的可动接触片。 上接触机构和下接触机构在横向上交替布置。

公开(公告)号：US20060279384A1

公开(公告)日：2006-12-14

申请号：US11444525

申请日：2006-06-01

申请人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

发明人： Yohei Takayama ,  Hiroki Arai ,  Yasuhiro Takebayashi

IPC分类号： H01H51/22

CPC分类号： H01H50/642 ,  H01H50/023 ,  H01H50/026 ,  H01H50/043 ,  H01H50/14 ,  H01H50/24 ,  H01H2050/028 ,  H01H2050/044

摘要： An electromagnetic block and a movable block are attached onto a base in an inclination attitude. Contact mechanisms press-fitted from above the base are laterally arranged in the inclination attitude, and the contact mechanisms are arranged in parallel in upper and lower stages. Idle end portions of movable contact pieces in the contact mechanisms are latched in a card which is linearly moved in a lateral direction. Terminals are projected downward from a bottom surface of the base, one of the terminals is connected to the fixed contact pieces of the contact mechanism, and the other terminal is connected to the movable contact pieces of the contact mechanism. The upper contact mechanism and the lower contact mechanism are alternately arranged in the lateral direction.

公开(公告)号：US06524955B2

公开(公告)日：2003-02-25

申请号：US09804814

申请日：2001-03-13

申请人： Hideaki Fukuda ,  Hiroki Arai

发明人： Hideaki Fukuda ,  Hiroki Arai

IPC分类号： H01L2144

CPC分类号： C23C16/4581 ,  C23C16/4404

摘要： In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

摘要翻译： 在包括在半导体衬底上形成薄膜的反应室和基座的等离子体CVD装置中，进行预处理步骤以在基座的表面上形成表面层，使得表面层可以防止半导体衬底静电 粘附在基座的表面上。 预处理步骤包括将包含与用于成膜处理的气体相同的气体的气体引入反应室，并通过CVD工艺在基座表面上形成表面层的步骤。

公开(公告)号：US06413887B1

公开(公告)日：2002-07-02

申请号：US09650168

申请日：2000-08-29

申请人： Hideaki Fukuda ,  Hiroki Arai

发明人： Hideaki Fukuda ,  Hiroki Arai

IPC分类号： H01L2131

CPC分类号： H01L21/3185 ,  C23C16/308 ,  C23C16/345 ,  Y10S438/909

摘要： A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH4) and a nitrogen gas (N2) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.

摘要翻译： 提供了具有低氢浓度的小热负荷的等离子体氮化硅系膜的制造方法。 该方法是使用具有抽真空的反应室的等离子体CVD装置在待处理材料上制造氮化硅系膜。 该方法包括以规定的流量将作为原料气体的甲硅烷气体（SiH 4）和氮气（N 2）引入反应室的步骤，将待处理材料加热至规定温度。 此时，其特征在于，氮气的流量为甲硅烷气体的流量的100倍以上。