公开(公告)号：US06665236B1

公开(公告)日：2003-12-16

申请号：US09889400

申请日：2001-07-17

申请人： Hiroo Munekata ,  Shinya Koshihara

发明人： Hiroo Munekata ,  Shinya Koshihara

IPC分类号： G11B1100

CPC分类号： G11B11/10586 ,  G11B11/10584

摘要： There is provided a magneto-optical recording medium and a magneto-optical recording device which greatly reduce the amount of time and light (electric) energy required for writing and reading of data while maintaining high-density recording and which can reduce the size and energy consumption of the magneto-optical recording device. The magneto-optical recording medium contains a recording layer (23) formed of a photoinduced-magnetic material thin film, and a memory layer (24) formed of a ferromagnetic thin film having perpendicular magnetic anisotropy, wherein the recording layer is subjected to photoinduced magnetization in which magnetism is produced directly through irradiation with light.

摘要翻译： 提供了一种磁光记录介质和磁光记录装置，其大大减少了在保持高密度记录的同时保持数据的写入和读取所需的时间和光（电）能量，并且可以减小尺寸和能量 磁光记录介质包含由光致磁性材料薄膜形成的记录层（23）和由具有垂直磁各向异性的铁磁性薄膜形成的存储层（24） 其中所述记录层经受通过光照射直接产生磁性的光致磁化。

公开(公告)号：US5416337A

公开(公告)日：1995-05-16

申请号：US126686

申请日：1993-09-24

申请人： Leroy L. Chang ,  Supratik Guha ,  Hiroo Munekata

发明人： Leroy L. Chang ,  Supratik Guha ,  Hiroo Munekata

IPC分类号： H01L33/06 ,  H01L29/225 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/06 ,  B82Y20/00

摘要： The present invention is a hetero superlattice pn junction. In particular, the invention combines n and p type superlattices into a single pn junction having a bandgap sufficient to create high frequency (i.e. blue or higher) light emission. Individual superlattices are formed using a molecular beam epitaxy process. This process creates thin layers of well material separated by thin layers of barrier material. The well material is doped to create carrier concentrations and the barrier materials are chosen in combination with the thickness of the well materials to adjust the effective bandgap of the superlattice in order to create an effective wide bandgap material. The barrier material for the n and p type superlattices is different from the material used to form either of the two types of well layers. A particular embodiment of the present invention forms a first superlattice from n type doped ZnSe well layers and undoped ZnMnSe barrier layers and forms a second superlattice from p type doped ZnTe well layers and undoped ZnMnSe barrier layers. The first and second superlattices are merged into a hetero superlattice pn junction. The thickness and composition of the individual well and barrier layers can be modified to adjust the effective bandgap of the pn junction. Therefore, a wide bandgap diode is formed from previously incompatible materials.

摘要翻译： 本发明是异质超晶格pn结。 特别地，本发明将n型和p型超晶格组合成具有足以产生高频（即蓝色或更高）光发射的带隙的单个pn结。 使用分子束外延工艺形成单个超晶格。 该过程产生由薄层的阻隔材料隔开的薄层材料。 掺杂阱材料以产生载流子浓度，并且结合阱材料的厚度选择阻挡材料以调节超晶格的有效带隙，以便产生有效的宽带隙材料。 n型和p型超晶格的阻挡材料与用于形成两种类型的阱层中的任一种的材料不同。 本发明的一个具体实施方案从n型掺杂的ZnSe阱层和未掺杂的ZnMnSe阻挡层形成第一超晶格，并从p型掺杂的ZnTe阱层和未掺杂的ZnMnSe势垒层形成第二超晶格。 第一和第二超晶格被合并成异质超晶格pn结。 可以修改单个阱和阻挡层的厚度和组成以调节pn结的有效带隙。 因此，宽带隙二极管由先前不兼容的材料形成。

公开(公告)号：US5191223A

公开(公告)日：1993-03-02

申请号：US725850

申请日：1991-07-03

申请人： Hiroo Munekata

发明人： Hiroo Munekata

IPC分类号： H01F1/40 ,  H01L43/00 ,  H01L43/10

CPC分类号： H01L43/10 ,  H01F1/401 ,  H01F1/405 ,  H01L43/00

摘要： A method and device are disclosed for converting electronic signals into magnetic signals in DMS materials by generating carriers in selected regions of the materials. The carriers comprise either holes or electrons and the concentration of the carriers in the DMS device is electronically and consequently reversibly controlled by varying the voltage supplied to the device. A carrier concentration-induced conversion of the DMS device is obtained in an area defined by an electrode so that the device of a selected area of the device is changed from one magnetic state to another magnetic state. A superexchange interaction through the carriers in the host DMS material causes a transition from one magnetic phase to another when the carrier concentration exceeds a critical value.