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1.发明申请Photoelectric Conversion Device and Camera Using Photoelectric Conversion Device 有权光电转换装置及相机使用光电转换装置公开(公告)号：US20080230685A1
公开(公告)日：2008-09-25
申请号：US12111342
申请日：2008-04-29
IPC分类号： H01J40/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.
摘要翻译： 光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。 在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。 晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。 具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准 膜和氧化硅膜。
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2.发明授权Photoelectric conversion device and camera using photoelectric conversion device 有权光电转换装置及相机采用光电转换装置公开(公告)号：US07709780B2
公开(公告)日：2010-05-04
申请号：US12111342
申请日：2008-04-29
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.
摘要翻译： 光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。 在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。 晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。 具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准 膜和氧化硅膜。
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3.发明申请Photoelectric conversion device and camera using photoelectric conversion device 有权光电转换装置及相机采用光电转换装置公开(公告)号：US20070018080A1
公开(公告)日：2007-01-25
申请号：US11527485
申请日：2006-09-27
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.
摘要翻译： 光电转换装置具有排列成阵列的像素。 每个像素包括用于将光转换为信号电荷的光接收区域和形成在光接收区域的表面上的绝缘膜。 每个像素还包括晶体管，其包括用于放大信号电荷的放大晶体管。 提供了具有比绝缘膜高的折射率的反射防止膜，并且设置在光接收区域的上方，绝缘膜设置在防反射膜和受光区之间。 晶体管的绝缘膜和栅极绝缘膜的膜厚度彼此不同。
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4.发明授权Photoelectric conversion device having an insulation film on a reflection prevention film, and camera using such photoelectric conversion device 有权在防反射膜上具有绝缘膜的光电转换装置，以及使用该光电转换装置的照相机公开(公告)号：US07385172B2
公开(公告)日：2008-06-10
申请号：US11527485
申请日：2006-09-27
IPC分类号： H01L31/062 , H01J40/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is provided, in which pixels are arranged in an array. Each of the pixels includes a light receiving region, transistors, and an insulation film. The insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A reflection prevention film is arranged at least above the light receiving region, with the insulation film being arranged between the reflection prevention film and the light receiving region, and has a silicon nitride film. An interlayer insulation film is arranged on the reflection prevention film, and a second reflection prevention film is laminated between the reflection prevention film and the interlayer insulation film.
摘要翻译： 提供了一种光电转换装置，其中像素被排列成阵列。 每个像素包括光接收区域，晶体管和绝缘膜。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 至少在光接收区域的上方布置反射防止膜，绝缘膜设置在防反射膜和受光区之间，并且具有氮化硅膜。 在防反射膜上设置层间绝缘膜，在防反射膜和层间绝缘膜之间层叠第二防反射膜。
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5.发明授权Photoelectric conversion device and camera using photoelectric conversion device 有权光电转换装置及相机采用光电转换装置公开(公告)号：US07126102B2
公开(公告)日：2006-10-24
申请号：US10747369
申请日：2003-12-30
IPC分类号： G01J1/44 , H01J40/14 , H03F3/08 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.
摘要翻译： 光电转换装置具有排列成阵列的像素。 每个像素包括用于将光转换为信号电荷的光接收区域和形成在光接收区域的表面上的绝缘膜。 每个像素还包括晶体管，其包括用于放大信号电荷的放大晶体管。 提供了具有比绝缘膜高的折射率的反射防止膜，并且设置在光接收区域的上方，绝缘膜设置在防反射膜和受光区之间。 晶体管的绝缘膜和栅极绝缘膜的膜厚度彼此不同。
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公开(公告)号：US5700719A
公开(公告)日：1997-12-23
申请号：US414049
申请日：1995-03-30
IPC分类号： H01L23/52 , C23C14/56 , C23C16/04 , H01L21/28 , H01L21/3205 , H01L21/8238 , H01L23/532 , H01L29/49 , H01L21/443
CPC分类号： H01L29/4933 , C23C14/568 , C23C16/04 , H01L21/823842 , H01L21/823871 , H01L23/53271 , H01L29/4925 , H01L2924/0002 , Y10S148/02
摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.
摘要翻译： 一种半导体器件，其中与相互不同的导电类型的半导体层接触并且用于至少连接相互不同的导电类型的层的电极布线包括主要由与主要成分相同的部件组成的第一部分 半导体层和由金属组成的第二部分。
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7.发明授权Method for making semiconductor device with metal deposited on electron donating surface of gate electrode 失效制造半导体器件的方法，金属沉积在栅电极的给电子表面上
公开(公告)号：US5599741A
公开(公告)日：1997-02-04
申请号：US479385
申请日：1995-06-07
IPC分类号： H01L21/266 , H01L21/336 , H01L21/768 , H01L29/49 , H01L29/78 , H01L21/44 , H01L21/22
CPC分类号： H01L29/6659 , H01L21/266 , H01L21/76879 , H01L29/4925 , H01L29/66659 , H01L29/7835 , H01L29/7836
摘要： A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.
摘要翻译： 包括场效应晶体管的半导体器件具有形成在半导体衬底的主表面上的源极和漏极区域以及跨越栅极绝缘膜的主表面上形成的栅电极。 栅电极具有形成在第一电极部分上的具有供电子表面的第一电极部分和由金属组成的第二电极部分。
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8.发明授权
公开(公告)号：US5541454A
公开(公告)日：1996-07-30
申请号：US478115
申请日：1995-06-07
IPC分类号： H01L27/108 , H01L23/48 , H01L23/52
CPC分类号： H01L27/10829 , H01L2924/0002
摘要： A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film.
摘要翻译： 半导体器件包括由在半导体衬底上形成的Al区域，形成在所述Al区域的表面上的Al氧化物膜和与所述Al区域相对的电极组成的电容器，插入所述Al氧化物膜。
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公开(公告)号：US5218232A
公开(公告)日：1993-06-08
申请号：US705596
申请日：1991-05-24
IPC分类号： H01L23/52 , C23C14/56 , C23C16/04 , H01L21/28 , H01L21/3205 , H01L21/8238 , H01L23/532 , H01L29/49
CPC分类号： H01L29/4933 , C23C14/568 , C23C16/04 , H01L21/823842 , H01L21/823871 , H01L23/53271 , H01L29/4925 , H01L2924/0002 , Y10S148/02
摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least the layers of mutually different conductive types, comprises a first portion principally composed of the same component as the principal component of the semiconductor layers, and a second portion consisting of a metal.
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10.发明申请PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权使用光电转换装置的光电转换装置和图像拾取系统公开(公告)号：US20110027934A1
公开(公告)日：2011-02-03
申请号：US12904269
申请日：2010-10-14
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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