Method of forming a pattern from a photosensitive heat-resistant
poly(amide)imide having hydroxyphenyl groups
    1.
    发明授权
    Method of forming a pattern from a photosensitive heat-resistant poly(amide)imide having hydroxyphenyl groups 失效
    由具有羟基苯基的感光耐热性聚酰胺酰亚胺形成图案的方法

    公开(公告)号:US5320935A

    公开(公告)日:1994-06-14

    申请号:US123243

    申请日:1993-09-20

    CPC分类号: C08G73/1089 Y10S430/107

    摘要: A photosensitive polymer containing a repeating unit represented by the following formula (I) and having a logarithmic viscosity number of from 0.1 to 5 dl/g as measured in a solvent at a temperature of 30.+-.0.01.degree. C. at a concentration of 0.5 g/dl: ##STR1## (wherein R.sup.1 is a trivalent or tetravalent carbocyclic aromatic group or heterocyclic group, R.sup.2 is an aliphatic group having at least two carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbocyclic aromatic group, a heterocyclic group or a polysiloxane group, R.sup.3 is a divalent organic group, R.sup.4 is ##STR2## a hydrogen atom or a monovalent organic group, R.sup.5 is a hydrogen atom or a monovalent organic group, m is independently 1 or 2, n is independently 0 or 1, and m and n meet 1.ltoreq.m+n.ltoreq.2); a method for preparing the above-mentioned photosensitive polymer; a photosensitive polymer composition containing the above-mentioned photosensitive polymer; and a method for preparing a poly(amide)imide film.

    摘要翻译: 一种含有下式(I)表示的重复单元并且在溶剂中在30 +/- 0.01℃的温度下测定的对数粘度为0.1至5dl / g的光敏聚合物,浓度为 0.5g / dl:(I)(其中R1是三价或四价碳环芳族基或杂环基,R2是具有至少两个碳原子的脂族基,脂环基,芳族脂族基,碳环芳族 基团,杂环基或聚硅氧烷基,R 3是二价有机基团,R 4是氢原子或一价有机基团,R 5是氢原子或一价有机基团,m独立地是1或2,n 独立地为0或1,m和n满足1≤m+ n <2); 制备上述光敏聚合物的方法; 含有上述光敏聚合物的光敏聚合物组合物; 和聚(酰胺)酰亚胺膜的制备方法。

    Photosensitive polymer having thiol group
    2.
    发明授权
    Photosensitive polymer having thiol group 失效
    具有硫醇基的感光聚合物

    公开(公告)号:US5026788A

    公开(公告)日:1991-06-25

    申请号:US360873

    申请日:1989-06-02

    摘要: Disclosed are a novel photosensitive poly(amide)imide precursor capable of being manufactured easily, having excellent shelf stability and high sensitivity, and containing less impurities, a process for manufacturing the above-mentioned precursor, a photosensitive polymer composition containing the precursor, and a process for forming a patterned poly(amide)imide film by the use of the photosensitive polymer composition.The photosensitive polymer has an inherent viscosity of 0.1 to 5 dl/g and contains a repeating unit represented by the following general formula (I), ##STR1## wherein R.sup.1 is a trivalent or tetravalent carbon cyclic aromatic group or hetrocyclic group; R.sup.2 is an aliphatic group having at least 2 carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbon cyclic aromatic group, a heterocyclic group or a polysiloxane group; R.sup.3 is a divalent organic group; R.sup.4 is --R.sup.3 --SH, a hydrogen atom or a monovalent organic group; m is independently 1 or 2; n is independently 0 or 1; and m and n satisfy 1.ltoreq.m+n.ltoreq.2.

    Photosensitive poly(amide)imide heat-resistant polymer
    3.
    发明授权
    Photosensitive poly(amide)imide heat-resistant polymer 失效
    光敏聚酰胺酰亚胺耐热聚合物

    公开(公告)号:US5025088A

    公开(公告)日:1991-06-18

    申请号:US554434

    申请日:1990-07-19

    CPC分类号: G03F7/0388 G03F7/0757

    摘要: The present invention here disclosed is directed to a photosensitive polymer having an inherent viscosity of 0.1 to 5 dl/g and represented by the general formula ##STR1## wherein R.sup.1 is independently a trivalent or tetravalent carbon cyclic aromatic group or heterocyclic group; R.sub.2 is independently an aliphatic group having at least 2 carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbon cyclic aromatic group, a heterocyclic group or a polysiloxane group; R.sub.3 and R.sub.4 are CH.sub.2 --CH.dbd.CH.sub.2 ; m is 1 or 2; n is 0 or 1; and m and n satisfy 1.ltoreq.m+n.ltoreq.2.The photosensitive polymer of the present invention is applicable as electronic materials such as passivation films of semiconductors and print circuits.

    Low-melting polyimide copolymer and method for preparing the same
    4.
    发明授权
    Low-melting polyimide copolymer and method for preparing the same 失效
    低熔点聚酰亚胺共聚物及其制备方法

    公开(公告)号:US4904758A

    公开(公告)日:1990-02-27

    申请号:US293326

    申请日:1989-01-05

    IPC分类号: C08G73/10

    CPC分类号: C08G73/1042 C08G73/1071

    摘要: The present invention is connected with a low-melting polyimide copolymer containing 30 to 90 mole % of an imide repeating unit represented by the following formula (I) and 10 to 70 mole % of an imide repeating unit represented by the following formula (II), and having a logarithmic viscosity number of 0.1 to 4 dl/g: ##STR1## wherein R.sup.1 is at least one of ##STR2## Furthermore, the present invention is connected with a method of preparing the low-melting polyimide copolymer.Since having a melting point of about 300.degree. to about 400.degree. C., the polyimide copolymer of the present invention has heat resistance and enables melt-moldings such as extrusion and injection molding.

    Polyimide photosensitive cover coating agent
    5.
    发明授权
    Polyimide photosensitive cover coating agent 失效
    聚酰亚胺感光涂层剂

    公开(公告)号:US5326792A

    公开(公告)日:1994-07-05

    申请号:US980164

    申请日:1992-11-23

    摘要: A photosensitive cover coating agent forming an insulating, protective coating having superior compatibility, sensitivity, heat resistance, adhesion, electrical properties and flexibility is provided,which coating agent is obtained by mixing a polymer (A) of repetition units of the formula ##STR1## wherein R.sup.1 is ##STR2## R.sup.2 is a divalent organic group, a compound (B) containing two or more (meth)acryloyl groups in one molecule,a compound (C) of the formula ##STR3## wherein Z is a divalent aliphatic or alicyclic group, R.sup.3 is H, monovalent organic group or characteristic group and R.sup.4 is H or --Z--R.sup.3, in 0.01 to 0.80 mol equivalent based on compound (B), the total quantity of (B) and (C) being 20 to 200 wt. parts per 100 wt. parts of (A), anda photopolymerization initiator or a sensitizing agent (D), in 0.5 to 20 wt. parts per 100 wt. parts of (A).

    摘要翻译: 提供了形成具有优异的相容性,灵敏度,耐热性,粘附性,电性能和柔性的绝缘保护涂层的感光性覆盖剂,该涂料通过将式(IMAGE)的重复单元的聚合物(A) 其中R 1是二价有机基团,在一个分子中含有两个或多个(甲基)丙烯酰基的化合物(B),式(IMAGE)的化合物(C),其中Z是二价 脂族或脂环族基团,R3为H,一价有机基团或特征基团,R4为H或-Z-R3,以化合物(B)为0.01〜0.80摩尔当量,(B)和(C)的总量为 20〜200重量% 每100重量份 (A)的部分和光聚合引发剂或敏化剂(D)的重量比为0.5〜20重量%。 每100重量份 部分(A)。

    Photosensitive heat-resistant polymer having hydroxyphenyl group for
forming a patterned image
    7.
    发明授权
    Photosensitive heat-resistant polymer having hydroxyphenyl group for forming a patterned image 失效
    具有用于形成图案化图像的具有羟基苯基的感光耐热聚合物

    公开(公告)号:US5298359A

    公开(公告)日:1994-03-29

    申请号:US693008

    申请日:1991-04-29

    CPC分类号: C08G73/1089 Y10S430/107

    摘要: A photosensitive polymer containing a repeating unit represented by the following formula (I) and having a logarithmic viscosity number of from 0.1 to 5 dl/g as measured in a solvent at a temperature of 30.degree..+-.0.01.degree. C. at a concentration of 0.5 g/dl: ##STR1## (wherein R.sup.1 is a trivalent or tetravalent carbocyclic aromatic group or heterocyclic group, R.sup.2 is an aliphatic group having at least two carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbocyclic aromatic group, a heterocyclic group or a polysiloxane group, R.sup.3 is a divalent organic group, R.sup.4 is ##STR2## a hydrogen atom or a monovalent organic group, R.sup.5 is a hydrogen atom or a monovalent organic group, m is independently 1 or 2, n is independently 0 or 1, and m and n meet 1.ltoreq.m+n.ltoreq.2); a method for preparing the above-mentioned photosensitive polymer; a photosensitive polymer composition containing the above-mentioned photosensitive polymer; and a method for preparing a poly(amide)imide film.

    摘要翻译: 一种含有下式(I)表示的重复单元并且在溶剂中,在温度为30度±0.01度,浓度为0.5的溶剂中测定的对数粘度值为0.1-5dl / g的光敏聚合物 g / dl:(*化学结构*)(I)(其中R1是三价或四价碳环芳基或杂环基,R2是具有至少两个碳原子的脂族基,脂环基,芳族脂族基, 碳环芳族基,杂环基或聚硅氧烷基,R3是二价有机基团,R4是(* CHEMICAL STRUCTURE *)氢原子或一价有机基团,R5是氢原子或一价有机基团,m独立地是 1或2,n独立地为0或1,m和n满足1 <= m + n <= 2); 制备上述光敏聚合物的方法; 含有上述光敏聚合物的光敏聚合物组合物; 和聚(酰胺)酰亚胺膜的制备方法。

    Photosensitive polymide precursor resin composition
    8.
    发明授权
    Photosensitive polymide precursor resin composition 失效
    感光聚酰亚胺前体树脂组合物

    公开(公告)号:US06664021B1

    公开(公告)日:2003-12-16

    申请号:US08756440

    申请日:1996-11-26

    IPC分类号: G03C176

    摘要: A photosensitive resin composition is provide which includes a compound for generating an acid by light irradiation and at least one polyimide precursor selected from the group consisting of a silicon-containing polyimide precursor (a) obtained from A mol of a tetracarboxylic dianhydride or its derivative formed by adding 2 mols or less of a monovalent saturated alcohol to 1 mol of the tetracarboxylic dianhydride, B mol of a diamine and C mol of an aminosilicon compound represented by the formula (1) H2N—R1—SiR23−kXk  (1) {wherein R1 is —(CH2)s—, (wherein s is an integer of from 1 to 4); R2 is independently an alkyl group having 1 to 6 carbon atoms, a phenyl group or a phenyl group substituted by an alkyl group having 7 to 12 carbon atoms; X is a hydrolytic alkoxy group; and k is 1≦k≦3} in a ratio meeting the following formulae (2) and (3) 1 ≦ C A - B ≦ 2.5 ( 2 ) 0.1 ≦ C B + C ≦ 1 ( 3 ) a silicon-containing polyamic acid ester (b) obtained by esterifying the precursor (a) with a monovalent saturated alcohol, and a partially esterified silicon-containing polyamic acid ester (c) obtained by partially esterifying the precursor (a) with the monovalent saturated alcohol.

    摘要翻译: 提供一种光敏树脂组合物,其包括通过光照射产生酸的化合物和至少一种选自由A摩尔四羧酸二酐或其衍生物形成的含硅聚酰亚胺前体(a)的聚酰亚胺前体 通过向1摩尔四羧酸二酐中加入2摩尔以下的一价饱和醇,B摩尔二胺和C摩尔由式(1)表示的氨基硅化合物{其中R 1为 - (CH 2)s - ,(其中s是1至4的整数); R 2独立地为具有1至6个碳原子的烷基,苯基或被具有7至12个碳原子的烷基取代的苯基; X是水解性烷氧基; 和k为1 <= K&LE; 3},满足下式(2)和(3)通过用一价饱和醇酯化前体(a)获得的含硅聚酰胺酸酯(b),和 通过用一价饱和醇部分酯化前体(a)而得到的部分酯化的含硅聚酰胺酸酯(c)。

    Photosensitive polyimide precursor composition
    9.
    发明授权
    Photosensitive polyimide precursor composition 失效
    感光聚酰亚胺前体组合物

    公开(公告)号:US5442024A

    公开(公告)日:1995-08-15

    申请号:US233693

    申请日:1994-04-26

    摘要: A photosensitive polyimide precursor composition of the present invention comprises a polyimide precursor represented by the formula (6)(OR.sup.5).sub.k R.sup.4.sub.3-k Si--R.sup.3 --X--Z (6)and having a logarithmic viscosity number of 0.1 to 5.0 dl/g measured in N-methyl-2-pyrrolidone at 30.degree. C. and a compound capable of generating an acid by light irradiation, said polyimide precursor being obtained by reacting A mol of a tetracarboxylic dianhydride, B mol of a diamine, and C mol of an aminosilane so as to meet the relations of the equations: ##EQU1## This composition not only has practical photosensitivity but also inhibits the reduction of film thickness due to curing and development, and it is also excellent in shelf stability in varnish and adhesive properties to a substrate such as a silicon wafer or the like.

    摘要翻译: 本发明的感光性聚酰亚胺前体组合物含有式(6)所示的聚酰亚胺前体(OR5)kR43-kSi-R3-XZ(6),其对数粘度为0.1〜5.0dl / g, 甲基-2-吡咯烷酮和30℃的能够通过光照射产生酸的化合物,所述聚酰亚胺前体是通过使A摩尔四羧酸二酐,B摩尔二胺和C摩尔的氨基硅烷反应得到的, 以满足方程式的关系: 该组合物不仅具有实用的光敏性,而且抑制了由于固化和显影而导致的膜厚度的降低,并且其清漆中的保存稳定性和对于 衬底如硅晶片等。

    Method of preparing a negative pattern utilizing photosensitive polymer
composition containing quinonediazide compound and a poly(amido)imide
precursor

    公开(公告)号:US5342739A

    公开(公告)日:1994-08-30

    申请号:US938139

    申请日:1992-10-22

    CPC分类号: G03F7/0757 G03F7/0233

    摘要: A method of preparing a negative type pattern of a polyimide film is provided which includes applying to a substrate a sufficient amount of a photosensitive polymer composition to form a negative type pattern, the photosensitive polymer composition comprising a mixture of a poly(amido)imide precursor containing a repeating unit represented by the following formula (I), at least one kind of quinonediazide compound and an organic solvent: ##STR1## R.sup.1 is a trivalent or a tetravalent carbocyclic aromatic group or heterocyclic group; R.sup.2 is an aliphatic group having at least two carbon atoms, an alicyclic group, an aromatic aliphatic group, a carbocyclic aromatic group, a heterocyclic group or a polysiloxane group; X is --O-- or NR.sup.5 --, where R.sup.5 is a hydrogen atom or a monovalent organic group having 10 or less carbon atoms; R.sup.3 is a divalent organic group; R.sup.4 is a hydrogen atom or a monovalent organic group having 20 or less carbon atoms; Ar is a hexavalent or decavalent organic group represented by the formula ##STR2## k is an integer of 1.ltoreq.k.ltoreq.5, and j+k+1 is equal to the valence of Ar; m is independently 1 or 2; n is independently 0 or 1 and the values of m and n are in the range of 1.ltoreq.m+n.ltoreq.2; prebaking the composition at 50.degree.-130.degree. C.; irradiating the composition through a mask with actinic radiation to form an irradiated composition; developing the irradiated composition with a developing solution comprising a basic solution of a basic substance in a solvent comprising 0 to 10 parts by weight of water and 100 to 90 parts by weight of a water-soluble organic solvent to remove unexposed portions of the composition and form a negative type pattern; rinsing and drying the pattern; and post-baking the pattern at 200.degree.-500.degree. C.