摘要:
A thin film transistor includes a semiconductor pattern disposed on a substrate and a semiconductor pattern portion with a conductive or nonconductive characteristic, and a anti-diffusion portion on a side of the semiconductor pattern portion to prevent metal ions from being diffused along the semiconductor pattern portion. A first insulating layer covers the semiconductor pattern and has a first contact hole exposing a first region of the semiconductor pattern portion and a second contact hole exposing a second region of the semiconductor pattern portion. A gate electrode is disposed on the first insulating layer. A second insulating layer covers the gate electrode and has a third contact hole exposing the first region and a fourth contact hole exposing the second region. A source electrode is formed on the second insulating layer and connected to the first region, and a drain electrode is formed on the second insulating layer and connected to the second region.
摘要:
A method of fabricating an array substrate includes forming a gate line and a gate electrode; forming a gate insulating layer, an intrinsic amorphous silicon layer, an inorganic material insulating layer and a heat transfer layer on the gate line and the gate electrode; irradiating a laser beam onto the heat transfer layer to crystallize the intrinsic amorphous silicon layer into a polycrystalline silicon layer; removing the heat transfer layer; patterning the inorganic insulating material layer using a buffered oxide etchant to form an etch-stopper corresponding to the gate electrode forming an impurity-doped amorphous silicon layer and a metal layer on the etch-stopper and the polycrystalline silicon layer; patterning the metal layer to form a data line, a source electrode and a drain electrode and forming a pixel electrode on the passivation layer.
摘要:
The present invention relates to an array substrate for a flat display device and a method for fabricating the same, in which a number of masks is reduced for reducing a cost and improving a device performance. The array substrate includes a gate electrode formed on an insulating substrate, a gate insulating film formed on an entire surface of the insulating substrate including the gate electrode, an active layer formed on the gate insulating film opposite to the gate electrode having a stack of a polysilicon layer and an amorphous silicon layer each having a width greater than the gate electrode, a source electrode and a drain electrode separated from each other at a portion of the active layer and formed over the active layer with an ohmic contact layer disposed therebetween, an interlayer insulating film formed on an entire surface of the insulating substrate having a contact hole to expose a predetermined portion of the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole.
摘要:
A thin film transistor includes a semiconductor pattern on a substrate, a gate insulating film to cover the semiconductor pattern, a gate electrode partially overlapping the semiconductor pattern with the gate insulating film therebetween, a hole in the gate electrode to expose the gate insulating film, an interlayer insulating film to cover the gate electrode, and a source electrode and a drain electrode contacting the semiconductor pattern through the interlayer insulating layer and the gate insulating layer, wherein the semiconductor pattern includes at least two channels between the source electrode and the drain electrode, the at least two channels having a region with a varying width.
摘要:
An organic light emitting diode display device and the driving method thereof that is adaptive for increasing display quality. The organic light emitting diode display device according to an embodiment includes a display panel where pixels having an organic light emitting diode device are arranged in a matrix type and a data driver that supplies a data voltage and an inverted voltage to the pixels, where the inverted voltage is symmetric to the data voltage relative to a reference voltage.
摘要:
A display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode.
摘要:
An organic light emitting diode display device and the driving method thereof that is adaptive for increasing display quality. The organic light emitting diode display device according to an embodiment includes a display panel where pixels having an organic light emitting diode device are arranged in a matrix type and a data driver that supplies a data voltage and an inverted voltage to the pixels, where the inverted voltage is symmetric to the data voltage relative to a reference voltage.
摘要:
The pixel circuit of an organic light emitting display includes a first transistor to a seventh transistor, a first capacitor, a second transistor and an organic light emitting diode. The first capacitor stores the data signal from the first, second and third transistors, and the second capacitor stores the threshold voltage of the fourth transistor from the fifth transistor. Voltages stored in the first and second capacitors are combined by the sixth transistor, and the fourth transistor generates a driving current corresponding to a combined voltage of the voltages stored in the first and second capacitor. The seventh transistor transmits the driving current and the organic light emitting diode emits light corresponding to the driving current.
摘要:
A thin film transistor includes a semiconductor pattern disposed on a substrate and a semiconductor pattern portion with a conductive or nonconductive characteristic, and a anti-diffusion portion on a side of the semiconductor pattern portion to prevent metal ions from being diffused along the semiconductor pattern portion. A first insulating layer covers the semiconductor pattern and has a first contact hole exposing a first region of the semiconductor pattern portion and a second contact hole exposing a second region of the semiconductor pattern portion. A gate electrode is disposed on the first insulating layer. A second insulating layer covers the gate electrode and has a third contact hole exposing the first region and a fourth contact hole exposing the second region. A source electrode is formed on the second insulating layer and connected to the first region, and a drain electrode is formed on the second insulating layer and connected to the second region.
摘要:
A light emitting device comprises a first pixel portion that includes a light emitting portion arranged between two electrodes on a first substrate, a transistor portion formed on a second substrate arranged to be opposed to the first substrate, a connection electrode extended from one of the two electrodes, and an electrical contact portion in surface contact with both the connection electrode and a drain of the transistor portion.