公开(公告)号：US08324519B2

公开(公告)日：2012-12-04

申请号：US13375406

申请日：2010-06-07

申请人： James Melvin Slicker ,  Hongwei Qu

发明人： James Melvin Slicker ,  Hongwei Qu

IPC分类号： H01H1/52

CPC分类号： H01H1/0036 ,  G02B26/0866 ,  H01H1/50 ,  H01H2001/0047 ,  H01H2001/0078 ,  H01H2061/006

摘要： A MEMS switch includes a latch mechanism, first and second electrical conductors, a first latch actuator, a second latch actuator, and an axial actuator. The latch mechanism may include a transfer rod and a contact member, the contact member extending radially outwardly from a position along the axial length of the transfer rod. The first and second electrical conductors may extend along, and may be radially offset from, a portion of the transfer rod. The first latch actuator may include a first latch pin, and the second latch actuator may include a second latch pin, the first and second latch actuators being configured to move toward and away from the transfer rod, and the first and second latch pins configured to engage the contact member. The at least one axial actuator may be configured to move the contact member towards and away from the first and second electrical conductors.

摘要翻译： MEMS开关包括闩锁机构，第一和第二电导体，第一闩锁致动器，第二闩锁致动器和轴向致动器。 闩锁机构可以包括传送杆和接触构件，接触构件从沿着传递杆的轴向长度的位置径向向外延伸。 第一和第二电导体可以沿着传输杆的一部分延伸并且可以沿径向偏移。 第一闩锁致动器可以包括第一闩锁销，并且第二闩锁致动器可以包括第二闩锁销，第一和第二闩锁致动器被配置成朝向和远离传递杆移动，并且第一和第二闩锁销被配置成 接触联系人。 至少一个轴向致动器可以被配置成使接触构件朝向和远离第一和第二电导体移动。

公开(公告)号：US20120067709A1

公开(公告)日：2012-03-22

申请号：US13375406

申请日：2010-06-07

申请人： James Melvin Slicker ,  Hongwei Qu

发明人： James Melvin Slicker ,  Hongwei Qu

IPC分类号： H01H9/20

CPC分类号： H01H1/0036 ,  G02B26/0866 ,  H01H1/50 ,  H01H2001/0047 ,  H01H2001/0078 ,  H01H2061/006

摘要： A MEMS switch includes a latch mechanism, first and second electrical conductors, a first latch actuator, a second latch actuator, and an axial actuator. The latch mechanism may include a transfer rod and a contact member, the contact member extending radially outwardly from a position along the axial length of the transfer rod. The first and second electrical conductors may extend along, and may be radially offset from, a portion of the transfer rod. The first latch actuator may include a first latch pin, and the second latch actuator may include a second latch pin, the first and second latch actuators being configured to move toward and away from the transfer rod, and the first and second latch pins configured to engage the contact member. The at least one axial actuator may be configured to move the contact member towards and away from the first and second electrical conductors.

摘要翻译： MEMS开关包括闩锁机构，第一和第二电导体，第一闩锁致动器，第二闩锁致动器和轴向致动器。 闩锁机构可以包括传送杆和接触构件，接触构件从沿着传递杆的轴向长度的位置径向向外延伸。 第一和第二电导体可以沿着传输杆的一部分延伸并且可以沿径向偏移。 第一闩锁致动器可以包括第一闩锁销，并且第二闩锁致动器可以包括第二闩锁销，第一和第二闩锁致动器被配置成朝向和远离传递杆移动，并且第一和第二闩锁销被配置成 接触联系人。 至少一个轴向致动器可以被配置成使接触构件朝向和远离第一和第二电导体移动。

公开(公告)号：US20110140216A1

公开(公告)日：2011-06-16

申请号：US12928542

申请日：2010-12-14

申请人： Hongwei Qu

发明人： Hongwei Qu

IPC分类号： H01L29/84 ,  H01L21/764

CPC分类号： H01L21/76229 ,  B81B2201/0235 ,  B81B2203/0136 ,  B81B2207/015 ,  B81C1/00952 ,  B81C2203/0714

摘要： The present disclosure relates to a method of fabricating a micromachined CMOS-MEMS integrated device as well as the devices/apparatus resulting from the method. In the disclosed method, the anisotropic etching (e.g., DRIE) for isolation trench formation on a MEMS element is performed on the back side of a silicon wafer, thereby avoiding the trench sidewall contamination and the screen effect of the isolation beams in a plasma etching process. In an embodiment, a layered wafer including a substrate and a composite thin film thereon is subjected to at least one (optionally at least two) back side anisotropic etching step to form an isolation trench (and optionally a substrate membrane). The method overcomes drawbacks of other microfabrication processes, including isolation trench sidewall contamination.

摘要翻译： 本公开涉及一种制造微机械加工的CMOS-MEMS集成装置的方法以及由该方法产生的装置/装置。 在所公开的方法中，在硅晶片的背面进行用于在MEMS元件上形成隔离沟槽的各向异性蚀刻（例如，DRIE），从而避免沟槽侧壁污染和隔离光束在等离子体蚀刻中的屏蔽效应 处理。 在一个实施例中，包括其上的基板和复合薄膜的分层晶片经受至少一个（可选的至少两个）背面各向异性蚀刻步骤以形成隔离沟槽（以及任选的基底膜）。 该方法克服了其他微细加工过程的缺点，包括隔离沟侧壁污染。

公开(公告)号：US08445324B2

公开(公告)日：2013-05-21

申请号：US12928542

申请日：2010-12-14

申请人： Hongwei Qu

发明人： Hongwei Qu

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76229 ,  B81B2201/0235 ,  B81B2203/0136 ,  B81B2207/015 ,  B81C1/00952 ,  B81C2203/0714

摘要： The present disclosure relates to a method of fabricating a micromachined CMOS-MEMS integrated device as well as the devices/apparatus resulting from the method. In the disclosed method, the anisotropic etching (e.g., DRIE) for isolation trench formation on a MEMS element is performed on the back side of a silicon wafer, thereby avoiding the trench sidewall contamination and the screen effect of the isolation beams in a plasma etching process. In an embodiment, a layered wafer including a substrate and a composite thin film thereon is subjected to at least one (optionally at least two) back side anisotropic etching step to form an isolation trench (and optionally a substrate membrane). The method overcomes drawbacks of other microfabrication processes, including isolation trench sidewall contamination.

摘要翻译： 本公开涉及一种制造微机械加工的CMOS-MEMS集成装置的方法以及由该方法产生的装置/装置。 在所公开的方法中，在硅晶片的背面进行用于在MEMS元件上形成隔离沟槽的各向异性蚀刻（例如，DRIE），从而避免沟槽侧壁污染和隔离光束在等离子体蚀刻中的屏蔽效应 处理。 在一个实施例中，包括其上的基板和复合薄膜的分层晶片经受至少一个（可选的至少两个）背面各向异性蚀刻步骤以形成隔离沟槽（以及任选的基底膜）。 该方法克服了其他微细加工过程的缺点，包括隔离沟侧壁污染。