公开(公告)号：US09111861B2

公开(公告)日：2015-08-18

申请号：US13366669

申请日：2012-02-06

申请人： Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chia-Wei Chang ,  Chao-Cheng Chen ,  Chun-Hung Lee ,  Dai-Lin Wu

发明人： Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chia-Wei Chang ,  Chao-Cheng Chen ,  Chun-Hung Lee ,  Dai-Lin Wu

IPC分类号： H01L21/266 ,  H01L21/28 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/265

CPC分类号： H01L21/3215 ,  H01L21/0338 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/28026 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/32134 ,  H01L21/32139

摘要： An embodiment of the current disclosure includes a method of providing a substrate, forming a polysilicon layer over the substrate, forming a first photoresist layer on the polysislicon layer, creating a first pattern on the first photoresist layer, wherein some portions of the polysilicon layer are covered by the first photoresist layer and some portions of the polysilicon layer are not covered by the first photoresist layer, implanting ions into the portions of the polysilicon layer that are not covered by the first photoresist layer, removing the first photoresist layer from the polysilicon layer, forming a second photoresist layer on the polysilicon layer, creating a second pattern on the second photoresist layer, and implanting ions into the portions of the polysilicon layer that are not covered by the second photoresist layer, removing the second photoresist layer from the polysilicon layer, and removing portions of the polysilicon layer using an etchant.

摘要翻译： 本公开的实施例包括提供衬底的方法，在衬底上形成多晶硅层，在聚苯乙烯层上形成第一光致抗蚀剂层，在第一光致抗蚀剂层上形成第一图案，其中多晶硅层的一些部分 由第一光致抗蚀剂层覆盖，并且多晶硅层的一些部分不被第一光致抗蚀剂层覆盖，将离子注入到未被第一光致抗蚀剂层覆盖的多晶硅层的部分中，从多晶硅层去除第一光致抗蚀剂层 在所述多晶硅层上形成第二光致抗蚀剂层，在所述第二光致抗蚀剂层上产生第二图案，以及将离子注入所述多晶硅层的未被所述第二光致抗蚀剂层覆盖的部分，从所述多晶硅层除去所述第二光致抗蚀剂层 并且使用蚀刻剂去除多晶硅层的部分。

公开(公告)号：US08124537B2

公开(公告)日：2012-02-28

申请号：US12029834

申请日：2008-02-12

申请人： Chun-Hung Lee ,  Chia-Chi Chung ,  Hsin-Chih Chen ,  Jeff J. Xu ,  Neng-Kuo Chen

发明人： Chun-Hung Lee ,  Chia-Chi Chung ,  Hsin-Chih Chen ,  Jeff J. Xu ,  Neng-Kuo Chen

IPC分类号： H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

摘要： A method is disclosed for etching an integrated circuit structure within a trench. A layer to be etched is applied over the structure and within the trench. A CF-based polymer is deposited over the layer to be etched followed by deposition of a capping layer of SiOCl-based polymer. The CF-based polymer reduces the width of the trench to such an extent that little or no SiOCl-based polymer is deposited at the bottom of the trench. An O2 plasma etch is performed to etch through the CF-based polymer at the bottom of the trench. The O2 plasma etch has little effect on the SiOCl-based polymer, the thus the upper surfaces of the structure remain covered with polymer. Thus, these upper surfaces remain fully protected during subsequent etching of the layer to be etched.

摘要翻译： 公开了一种用于蚀刻沟槽内的集成电路结构的方法。 待蚀刻的层被施加在结构之上和沟槽内。 将CF基聚合物沉积在待蚀刻的层上，随后沉积SiOCl基聚合物的覆盖层。 基于CF的聚合物将沟槽的宽度减小到在沟槽底部沉积少量或不存在SiOCl基聚合物的程度。 执行O2等离子体蚀刻以在沟槽的底部蚀刻通过CF基聚合物。 O2等离子体蚀刻对SiOCl基聚合物几乎没有影响，因此结构的上表面保持被聚合物覆盖。 因此，在随后蚀刻待蚀刻的层期间，这些上表面保持完全保护。

公开(公告)号：US07939451B2

公开(公告)日：2011-05-10

申请号：US11759622

申请日：2007-06-07

申请人： Shih-Chang Tsai ,  Chun-Hung Lee ,  Ming-Cheng Deng ,  Ta-Hung Yang

发明人： Shih-Chang Tsai ,  Chun-Hung Lee ,  Ming-Cheng Deng ,  Ta-Hung Yang

IPC分类号： H01L21/302

CPC分类号： H01L21/0337

摘要： A method for fabricating a patter is provided as followed. First, a material layer is provided, whereon a patterned hard mask layer is formed. A spacer is deposited on the sidewalls of the patterned hard mask layer. Then, the patterned hard mask layer is removed, and an opening is formed between the adjacent spacers. Afterwards, a portion of the material layer is removed to form a patterned material layer by using the spacer as mask.

摘要翻译： 提供了一种制造图案的方法。 首先，提供材料层，其中形成图案化的硬掩模层。 间隔物沉积在图案化的硬掩模层的侧壁上。 然后，去除图案化的硬掩模层，并且在相邻间隔件之间形成开口。 然后，通过使用间隔物作为掩模，去除材料层的一部分以形成图案化的材料层。

公开(公告)号：US20090086422A1

公开(公告)日：2009-04-02

申请号：US11627021

申请日：2007-01-25

申请人： John McClure ,  Chun-Hung Lee

发明人： John McClure ,  Chun-Hung Lee

IPC分类号： H05K7/20 ,  H05K5/00

CPC分类号： H05K7/20772 ,  H05K7/1487

摘要： An openable dual-board case for multi-mainboard system includes a rectangular tubular body assembled from two bent plates connected together via a pivoting structure, so that the two bent plates are pivotally turnably about the pivoting structure relative to each other to open or close the tubular body. With the openable tubular body, necessary system assembling, dismounting, maintaining, and repairing can be conveniently and efficiently performed. Moreover, two mainboards may be separately mounted on two opposite interiors of the bent plates to face toward each other. Therefore, the openable dual-board case allows a multi-mainboard system to have optimal spatial arrangement to achieve best heat-dissipation efficiency and largely reduce noises.

摘要翻译： 用于多主板系统的可打开的双板壳体包括由通过枢转结构连接在一起的两个弯曲板组装的矩形管状体，使得两个弯曲板围绕枢转结构相对于彼此枢转可转动以打开或关闭 管状体。 利用可开启的管体，可以方便，有效地进行必要的系统组装，拆卸，维护和修理。 此外，两个主板可以分别安装在弯板的两个相对的内部上，以面对彼此。 因此，可开启的双板盒允许多主板系统具有最佳的空间布置，以获得最佳的散热效率并大大降低噪音。

公开(公告)号：US20080180925A1

公开(公告)日：2008-07-31

申请号：US11627304

申请日：2007-01-25

申请人： John McClure ,  Chun-Hung Lee

发明人： John McClure ,  Chun-Hung Lee

IPC分类号： H05K5/00

CPC分类号： H05K7/20727 ,  H05K7/1487

摘要： A dual-board case for multi-mainboard system includes a rectangular-sectioned tubular housing, in which two track sets are provided; and two mainboard trays being movably mounted on the two track sets to locate at an interior of two opposite lateral walls of the tubular housing. Each of the two mainboard trays has a loading surface, on which a mainboard is mounted; and the two mainboard trays are mounted on the track sets with their loading surfaces and accordingly, the two mainboards mounted thereon facing toward each other. Therefore, the dual-board case allows a multi-mainboard system to have optimal spatial arrangement to achieve best heat-dissipation efficiency and largely reduce noises.

摘要翻译： 用于多主板系统的双板壳体包括矩形截面的管状壳体，其中设置有两个轨道组; 并且两个主板托盘可移动地安装在两个轨道组上，以定位在管状壳体的两个相对的侧壁的内部。 两个主板托盘中的每一个具有装载表面，其上安装有主板; 并且两个主板托盘以其装载表面安装在轨道组上，因此安装在其上的两个主板面对彼此。 因此，双板案例允许多主板系统具有最佳的空间布置，以获得最佳的散热效率并大大降低噪声。

公开(公告)号：US20080180896A1

公开(公告)日：2008-07-31

申请号：US11626936

申请日：2007-01-25

申请人： John McClure ,  Chun-Hung Lee

发明人： John McClure ,  Chun-Hung Lee

IPC分类号： G06F1/16

CPC分类号： G06F1/20 ,  G06F1/184

摘要： A chassis partition framework is provided for configuring a personal cluster computer that has a head-node mainboard, a first compute-node mainboard, a second compute-node mainboard, a third compute-node mainboard and a fourth compute-node mainboard. The chassis partition framework mainly includes a top chamber, a left chamber and a right chamber. The top chamber is for configuring the head-node mainboard horizontally. The left and right chambers located under the top chamber are for vertically configuring the first and second compute-node mainboards and the third and fourth compute-node mainboards respectively in face-to-face alignment, with the second and third compute-node mainboards standing in back-to-back alignment. Therefore, the mechanical problems of the conventional blade-type personal cluster computer about heat-dissipation, noise-reduction, expansibility and space-arrangement may be improved through the chassis partition framework.

摘要翻译： 提供了一种用于配置具有头节点主板，第一计算节点主板，第二计算节点主板，第三计算节点主板和第四计算节点主板的个人集群计算机的机箱分区框架。 底盘分隔框架主要包括顶部室，左室和右室。 顶部室用于水平配置头节点主板。 位于顶部室下方的左，右室分别用于垂直配置第一和第二计算节点主板以及第三和第四计算节点主板的面对面对准，第二和第三计算节点主板站立 背靠背对齐。 因此，传统的叶片型个人集群计算机关于散热，降噪，可扩展性和空间布置的机械问题可以通过底盘分割框架来改进。

公开(公告)号：US20070264773A1

公开(公告)日：2007-11-15

申请号：US11382401

申请日：2006-05-09

申请人： Hong-Ji Lee ,  Chun-Hung Lee

发明人： Hong-Ji Lee ,  Chun-Hung Lee

IPC分类号： H01L21/336 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32139 ,  H01L21/31116 ,  H01L21/32136

摘要： Methods which comprise: providing a stack to be etched, the stack comprising a metal interconnect layer disposed above a substrate, a barrier layer disposed above the metal interconnect layer, a hard mask layer disposed on the barrier layer, and a patterning layer disposed above the hard mask layer wherein the patterning layer defines a pattern above the hard mask layer; and etching the pattern through the hard mask layer and at least a portion of the barrier layer, wherein the etching through an interface between the hard mask layer and the barrier layer is carried out using a fluorine-containing etch recipe.

摘要翻译： 包括：提供待蚀刻的堆叠的堆叠，所述堆叠包括设置在衬底上方的金属互连层，设置在所述金属互连层上方的势垒层，设置在所述阻挡层上的硬掩模层以及设置在所述阻挡层上方的图案形成层 硬掩模层，其中图案化层限定硬掩模层上方的图案; 并且通过硬掩模层和阻挡层的至少一部分蚀刻图案，其中通过含氟蚀刻配方进行通过硬掩模层和阻挡层之间的界面的蚀刻。

公开(公告)号：US07435681B2

公开(公告)日：2008-10-14

申请号：US11382401

申请日：2006-05-09

申请人： Hong-Ji Lee ,  Chun-Hung Lee

发明人： Hong-Ji Lee ,  Chun-Hung Lee

IPC分类号： H01L21/461 ,  H01L21/302 ,  H01L21/44

CPC分类号： H01L21/32139 ,  H01L21/31116 ,  H01L21/32136

摘要： Methods which comprise: providing a stack to be etched, the stack comprising a metal interconnect layer disposed above a substrate, a barrier layer disposed above the metal interconnect layer, a hard mask layer disposed on the barrier layer, and a patterning layer disposed above the hard mask layer wherein the patterning layer defines a pattern above the hard mask layer; and etching the pattern through the hard mask layer and at least a portion of the barrier layer, wherein the etching through an interface between the hard mask layer and the barrier layer is carried out using a fluorine-containing etch recipe.

摘要翻译： 包括：提供待蚀刻的堆叠的堆叠，所述堆叠包括设置在衬底上方的金属互连层，设置在所述金属互连层上方的势垒层，设置在所述阻挡层上的硬掩模层以及设置在所述阻挡层上方的图案形成层 硬掩模层，其中图案化层限定硬掩模层上方的图案; 并且通过硬掩模层和阻挡层的至少一部分蚀刻图案，其中通过含氟蚀刻配方进行通过硬掩模层和阻挡层之间的界面的蚀刻。

公开(公告)号：US20070258195A1

公开(公告)日：2007-11-08

申请号：US11482788

申请日：2006-07-10

申请人： Yao-Ming Liu ,  Chun-Hung Lee ,  Shih-Tsung Chen

发明人： Yao-Ming Liu ,  Chun-Hung Lee ,  Shih-Tsung Chen

IPC分类号： H05K5/00 ,  H05K7/00

CPC分类号： G06F1/185 ,  H05K7/1418

摘要： A fastening assembly for riser cards equipped with memory modules includes holders and latches. Each of the holders has bars and pillars to form a solid framework and couple to a mother board. The edges of the riser cards are held by holding grooves on the pillars to enable the riser cards sliding therein and insert towards riser sockets on the mother board. Meanwhile, the latches slip to latch the holding grooves to limit the movement of the riser cards. Thus, the fastening assembly improves the fixing strength of the riser cards and prevents from moving off while impacted, vibrated or crashed.

摘要翻译： 配备有存储器模块的用于转接卡的紧固组件包括保持器和闩锁。 每个持有人都有酒吧和柱子，形成一个坚实的框架，并与母板相融合。 提升卡的边缘通过在支柱上保持凹槽来保持，以使得转接卡在其中滑动并插入到母板上的提升板插座。 同时，闩锁滑动以锁定保持槽以限制转接卡的移动。 因此，紧固组件提高了提升卡的固定强度，并防止在受到冲击，振动或撞击时移动。

公开(公告)号：US20130203247A1

公开(公告)日：2013-08-08

申请号：US13366669

申请日：2012-02-06

申请人： Tzu-Yen HSIEH ,  Ming-Ching CHANG ,  Chia-Wei CHANG ,  Chao-Cheng CHEN ,  Chun-Hung LEE ,  Dai-Lin WU

发明人： Tzu-Yen HSIEH ,  Ming-Ching CHANG ,  Chia-Wei CHANG ,  Chao-Cheng CHEN ,  Chun-Hung LEE ,  Dai-Lin WU

IPC分类号： H01L21/20

CPC分类号： H01L21/3215 ,  H01L21/0338 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/28026 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/32134 ,  H01L21/32139

摘要： An embodiment of the current disclosure includes a method of providing a substrate, forming a polysilicon layer over the substrate, forming a first photoresist layer on the polysislicon layer, creating a first pattern on the first photoresistlayer, wherein some portions of the polysilicon layer are covered by the first photoresist layer and some portions of the polysilicon layer are not covered by the first photoresist layer, implanting ions into the portions of the polysilicon layer that are not covered by the first photoresist layer, removing the first photoresist layer from the polysilicon layer, forming a second photoresist layer on the polysilicon layer, creating a second pattern on the second photoresistlayer, and implanting ions into the portions of the polysilicon layer that are not covered by the second photoresist layer, removing the second photoresist layer from the polysilicon layer, and removing portions of the polysilicon layer using an etchant.

摘要翻译： 本公开的实施例包括提供衬底的方法，在衬底上形成多晶硅层，在聚苯乙烯层上形成第一光致抗蚀剂层，在第一光致抗蚀剂层上产生第一图案，其中多晶硅层的一些部分被覆盖 通过第一光致抗蚀剂层，并且多晶硅层的一些部分未被第一光致抗蚀剂层覆盖，将离子注入未被第一光致抗蚀剂层覆盖的多晶硅层的部分中，从多晶硅层去除第一光致抗蚀剂层， 在所述多晶硅层上形成第二光致抗蚀剂层，在所述第二光致抗蚀剂层上形成第二图案，以及将离子注入所述多晶硅层的未被所述第二光致抗蚀剂层覆盖的部分，从所述多晶硅层除去所述第二光致抗蚀剂层，以及 使用蚀刻剂去除多晶硅层的部分。