公开(公告)号：US09166099B2

公开(公告)日：2015-10-20

申请号：US13234739

申请日：2011-09-16

Applicant: Sung-won Hwang ,  Geun-woo Ko ,  Sung-hyun Sim ,  Hun-jae Chung ,  Han-kyu Seong ,  Cheol-soo Sone ,  Jin-hyun Lee ,  Hyung-duk Ko ,  Suk-ho Choi ,  Sung Kim

Inventor： Sung-won Hwang ,  Geun-woo Ko ,  Sung-hyun Sim ,  Hun-jae Chung ,  Han-kyu Seong ,  Cheol-soo Sone ,  Jin-hyun Lee ,  Hyung-duk Ko ,  Suk-ho Choi ,  Sung Kim

IPC: H01L29/06 ,  H01L33/06 ,  H01L29/786 ,  H01L33/34 ,  H01L51/00

CPC classification number: H01L33/06 ,  H01L29/78684 ,  H01L33/34 ,  H01L51/0046

Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Abstract translation: 提供石墨烯发光装置及其制造方法。 石墨烯发光器件包括掺杂有p型掺杂剂的p型石墨烯; 掺杂有n型掺杂剂的n型石墨烯; 以及设置在所述类型石墨烯和所述n型石墨烯之间并发光的活性石墨烯，其中所述p型石墨烯，所述n型石墨烯和所述活性石墨烯水平地布置。

公开(公告)号：US08735867B2

公开(公告)日：2014-05-27

申请号：US13231454

申请日：2011-09-13

Applicant: Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

Inventor： Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/00

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/816

Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

Abstract translation: 公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒 所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。

公开(公告)号：US08455284B2

公开(公告)日：2013-06-04

申请号：US13231415

申请日：2011-09-13

Applicant: Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

Inventor： Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

IPC: H01L21/00

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24

Abstract: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.

Abstract translation: 一种III族氮化物纳米棒发光器件及其制造方法。 该方法包括：准备衬底，形成绝缘膜，该绝缘膜包括一个或多个开口，暴露在衬底上的衬底的部分;通过提供第III族源气体，在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒种子层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒，通过以脉冲模式提供第III族源气体和杂质源气体并连续地供给N源气体，形成氮 在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层，以及在所述有源层上形成第二导电氮化物半导体层。

公开(公告)号：US08274069B2

公开(公告)日：2012-09-25

申请号：US12333531

申请日：2008-12-12

Applicant: Hun Jae Chung ,  Cheol Soo Sone ,  Sung Hwan Jang ,  Rak Jun Choi ,  Soo Min Lee

Inventor： Hun Jae Chung ,  Cheol Soo Sone ,  Sung Hwan Jang ,  Rak Jun Choi ,  Soo Min Lee

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0

Abstract translation: 提供了一种氮化物半导体发光器件。 根据本发明的一个方面的氮化物半导体发光器件可以包括：设置在衬底上的n型氮化物半导体层; 设置在n型氮化物半导体层上的有源层，并且包括量子势垒层和量子阱层; 以及设置在有源层上的p型氮化物半导体层，其中每个量子势垒层包括多个In x Ga（1-x）N层（0

公开(公告)号：US20120068154A1

公开(公告)日：2012-03-22

申请号：US13234620

申请日：2011-09-16

Applicant: Sung-won HWANG ,  Geun-woo KO ,  Sung-hyun SIM ,  Hun-jae CHUNG ,  Cheol-soo SONE ,  Jin-hyun LEE ,  Byung-hee HONG ,  Su-kang BAE

Inventor： Sung-won HWANG ,  Geun-woo KO ,  Sung-hyun SIM ,  Hun-jae CHUNG ,  Cheol-soo SONE ,  Jin-hyun LEE ,  Byung-hee HONG ,  Su-kang BAE

IPC: H01L51/54 ,  H01L51/56

CPC classification number: H01L51/502 ,  C09K11/65 ,  H01L51/5088 ,  H01L51/5092 ,  H05B33/14

Abstract: A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer.

Abstract translation: 石墨烯量子点发光器件包括：第一石墨烯; 设置在第一石墨烯上并且包括多个石墨烯量子点的石墨烯量子点层; 以及设置在石墨烯量子点层上的第二石墨烯。 石墨烯量子点发光器件的制造方法包括：形成掺杂有第一掺杂剂的第一石墨烯; 在所述第一石墨烯上形成包括多个石墨烯量子点的石墨烯量子点层; 以及在所述石墨烯量子点层上形成掺杂有第二掺杂剂的第二石墨烯。

公开(公告)号：US20120068153A1

公开(公告)日：2012-03-22

申请号：US13231415

申请日：2011-09-13

Applicant: Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

Inventor： Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

IPC: H01L33/04 ,  H01L33/32

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24

Abstract: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.

Abstract translation: 一种III族氮化物纳米棒发光器件及其制造方法。 该方法包括：准备衬底，形成绝缘膜，该绝缘膜包括一个或多个开口，暴露在衬底上的衬底的部分;通过提供第III族源气体，在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒种子层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒，通过以脉冲模式提供第III族源气体和杂质源气体并连续地供给N源气体，形成氮 在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层，以及在所述有源层上形成第二导电氮化物半导体层。

公开(公告)号：US20120061641A1

公开(公告)日：2012-03-15

申请号：US13231454

申请日：2011-09-13

Applicant: Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

Inventor： Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/816

Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

Abstract translation: 公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒 所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。

公开(公告)号：US20090278113A1

公开(公告)日：2009-11-12

申请号：US12333531

申请日：2008-12-12

Applicant: Hun Jae CHUNG ,  Cheol Soo SONE ,  Sung Hwan JANG ,  Rak Jun CHOI ,  Soo Min LEE

Inventor： Hun Jae CHUNG ,  Cheol Soo SONE ,  Sung Hwan JANG ,  Rak Jun CHOI ,  Soo Min LEE

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0

Abstract translation: 提供了一种氮化物半导体发光器件。 根据本发明的一个方面的氮化物半导体发光器件可以包括：设置在衬底上的n型氮化物半导体层; 设置在n型氮化物半导体层上的有源层，并且包括量子势垒层和量子阱层; 以及设置在有源层上的p型氮化物半导体层，其中每个量子势垒层包括多个In x Ga（1-x）N层（0

公开(公告)号：US20120068152A1

公开(公告)日：2012-03-22

申请号：US13234739

申请日：2011-09-16

Applicant: Sung-won HWANG ,  Geun-woo KO ,  Sung-hyun SIM ,  Hun-jae CHUNG ,  Han-kyu SEONG ,  Cheol-soo SONE ,  Jin-hyun LEE ,  Hyung-duk KO ,  Suk-ho CHOI ,  Sung KIM

Inventor： Sung-won HWANG ,  Geun-woo KO ,  Sung-hyun SIM ,  Hun-jae CHUNG ,  Han-kyu SEONG ,  Cheol-soo SONE ,  Jin-hyun LEE ,  Hyung-duk KO ,  Suk-ho CHOI ,  Sung KIM

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L29/78684 ,  H01L33/34 ,  H01L51/0046

Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Abstract translation: 提供石墨烯发光装置及其制造方法。 石墨烯发光器件包括掺杂有p型掺杂剂的p型石墨烯; 掺杂有n型掺杂剂的n型石墨烯; 以及设置在所述类型石墨烯和所述n型石墨烯之间并发光的活性石墨烯，其中所述p型石墨烯，所述n型石墨烯和所述活性石墨烯水平地布置。