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公开(公告)号:US09166099B2
公开(公告)日:2015-10-20
申请号:US13234739
申请日:2011-09-16
申请人: Sung-won Hwang , Geun-woo Ko , Sung-hyun Sim , Hun-jae Chung , Han-kyu Seong , Cheol-soo Sone , Jin-hyun Lee , Hyung-duk Ko , Suk-ho Choi , Sung Kim
发明人: Sung-won Hwang , Geun-woo Ko , Sung-hyun Sim , Hun-jae Chung , Han-kyu Seong , Cheol-soo Sone , Jin-hyun Lee , Hyung-duk Ko , Suk-ho Choi , Sung Kim
IPC分类号: H01L29/06 , H01L33/06 , H01L29/786 , H01L33/34 , H01L51/00
CPC分类号: H01L33/06 , H01L29/78684 , H01L33/34 , H01L51/0046
摘要: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.
摘要翻译: 提供石墨烯发光装置及其制造方法。 石墨烯发光器件包括掺杂有p型掺杂剂的p型石墨烯; 掺杂有n型掺杂剂的n型石墨烯; 以及设置在所述类型石墨烯和所述n型石墨烯之间并发光的活性石墨烯,其中所述p型石墨烯,所述n型石墨烯和所述活性石墨烯水平地布置。
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2.
公开(公告)号:US20120181570A1
公开(公告)日:2012-07-19
申请号:US13347094
申请日:2012-01-10
申请人: Hyung Duk KO , Yung Ho RYU , Tae Sung JANG
发明人: Hyung Duk KO , Yung Ho RYU , Tae Sung JANG
摘要: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.
摘要翻译: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括:透光基板,包括相对的第一和第二主平面,并且在其第一和第二主平面中的至少一个上形成突起和凹陷; 形成在所述基板的所述第一主平面上并且包括第一导电半导体层,有源层和第二导电层的发光结构; 连接到第一导电半导体层的第一电极结构; 连接到第二导电半导体层的第二电极结构。
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3.
公开(公告)号:US08993993B2
公开(公告)日:2015-03-31
申请号:US13104487
申请日:2011-05-10
申请人: Hyung Duk Ko , Jung Ja Yang , Yu Seung Kim , Youn Joon Sung , Soo Jin Jung , Dae Cheon Kim , Byung Kwun Lee
发明人: Hyung Duk Ko , Jung Ja Yang , Yu Seung Kim , Youn Joon Sung , Soo Jin Jung , Dae Cheon Kim , Byung Kwun Lee
CPC分类号: H01L33/20 , H01L33/38 , H01L33/42 , H01L33/44 , H01L2933/0091
摘要: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.
摘要翻译: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构和图案。 发光结构包括第一导电型半导体层,有源层和第二导电型半导体层。 该图案形成在发光结构的表面中的至少一个发光表面上。 该图案具有形状相似的多个凸部或凹部。 具有形成在其上的图案的发光面具有多个尺寸相等并以规则排列的虚拟参考区域。 凸部或凹部设置在参考区域中,使得其边缘的一部分与多个虚拟参考区域之一的轮廓接触。
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公开(公告)号:US08829548B2
公开(公告)日:2014-09-09
申请号:US13554026
申请日:2012-07-20
申请人: Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人: Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
IPC分类号: H01L33/00
CPC分类号: H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译: 发光器件封装包括:具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极,使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。
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公开(公告)号:US20130020598A1
公开(公告)日:2013-01-24
申请号:US13554026
申请日:2012-07-20
申请人: Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人: Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
CPC分类号: H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译: 发光器件封装包括:具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极,使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。
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公开(公告)号:US20120068152A1
公开(公告)日:2012-03-22
申请号:US13234739
申请日:2011-09-16
申请人: Sung-won HWANG , Geun-woo KO , Sung-hyun SIM , Hun-jae CHUNG , Han-kyu SEONG , Cheol-soo SONE , Jin-hyun LEE , Hyung-duk KO , Suk-ho CHOI , Sung KIM
发明人: Sung-won HWANG , Geun-woo KO , Sung-hyun SIM , Hun-jae CHUNG , Han-kyu SEONG , Cheol-soo SONE , Jin-hyun LEE , Hyung-duk KO , Suk-ho CHOI , Sung KIM
IPC分类号: H01L33/06
CPC分类号: H01L33/06 , H01L29/78684 , H01L33/34 , H01L51/0046
摘要: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.
摘要翻译: 提供石墨烯发光装置及其制造方法。 石墨烯发光器件包括掺杂有p型掺杂剂的p型石墨烯; 掺杂有n型掺杂剂的n型石墨烯; 以及设置在所述类型石墨烯和所述n型石墨烯之间并发光的活性石墨烯,其中所述p型石墨烯,所述n型石墨烯和所述活性石墨烯水平地布置。
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7.
公开(公告)号:US20110278538A1
公开(公告)日:2011-11-17
申请号:US13104487
申请日:2011-05-10
申请人: Hyung Duk KO , Jung Ja YANG , Yu Seung KIM , Youn Joon SUNG , Soo Jin JUNG , Dae Cheon KIM , Byung Kwun LEE
发明人: Hyung Duk KO , Jung Ja YANG , Yu Seung KIM , Youn Joon SUNG , Soo Jin JUNG , Dae Cheon KIM , Byung Kwun LEE
CPC分类号: H01L33/20 , H01L33/38 , H01L33/42 , H01L33/44 , H01L2933/0091
摘要: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.
摘要翻译: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构和图案。 发光结构包括第一导电型半导体层,有源层和第二导电型半导体层。 该图案形成在发光结构的表面中的至少一个发光表面上。 该图案具有形状相似的多个凸部或凹部。 具有形成在其上的图案的发光面具有多个尺寸相等并以规则排列的虚拟参考区域。 凸部或凹部设置在参考区域中,使得其边缘的一部分与多个虚拟参考区域之一的轮廓接触。
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