摘要:
Example embodiments may provide memory devices having a charge trap layer which includes a hole trap and an electron trap. The memory device may generate a relatively large flat band voltage gap according to an applied bias voltage. Accordingly, a stable multilevel cell may be realized.
摘要:
A display device includes a first substrate, a display section that is on the first substrate and that displays an image, first pad portions at a first directional edge of the first substrate and connected to the display section and to a driver integrated circuit (driver IC) that supplies a driving voltage, a second substrate on the first substrate with the display section interposed therebetween, and which exposes the first pad portions, a touch section that is on the second substrate and that corresponds to the display section, second pad portions on the second substrate and connected to edges of the touch section, a main flexible printed circuit board (main FPCB) connected to the first pad portions, and a touch flexible printed circuit board (touch FPCB) connected to the second pad portions and overlapping the main FPCB.
摘要:
A display device includes an upper substrate on a lower substrate, a driver integrated chip (IC) on the lower substrate, the driver IC and upper substrate contacting different parts of the lower substrate, a plurality of bumper units along edges of the driver IC, and a deformation preventing bumper unit between the bumper units, the deformation preventing bumper unit being configured to prevent the driver IC from being deformed.
摘要:
A memory device includes a gate stack on a substrate. The gate stack is disposed between a source and a drain. The gate stack includes a tunneling film, storage node, and control oxide film. A thickness of the control oxide film is greater than or equal to about 5 nm and less than or equal to about 30 nm. A method of manufacturing a memory device, including a gate stack on a substrate, wherein the gate stack is disposed between a source and a drain, includes: sequentially forming a tunneling film, a first silicon-rich oxide film, and a control oxide film on the substrate, wherein the first silicon-rich oxide film comprises a SiOx film (1.5
摘要:
A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.
摘要:
A display device includes an upper substrate on a lower substrate, a driver integrated chip (IC) on the lower substrate, the driver IC and upper substrate contacting different parts of the lower substrate, a plurality of bumper units along edges of the driver IC, and a deformation preventing bumper unit between the bumper units, the deformation preventing bumper unit being configured to prevent the driver IC from being deformed.
摘要:
A display device includes a first substrate, a display section that is on the first substrate and that displays an image, first pad portions at a first directional edge of the first substrate and connected to the display section and to a driver integrated circuit (driver IC) that supplies a driving voltage, a second substrate on the first substrate with the display section interposed therebetween, and which exposes the first pad portions, a touch section that is on the second substrate and that corresponds to the display section, second pad portions on the second substrate and connected to edges of the touch section, a main flexible printed circuit board (main FPCB) connected to the first pad portions, and a touch flexible printed circuit board (touch FPCB) connected to the second pad portions and overlapping the main FPCB.
摘要:
A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.