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    Method for forming a tungsten upper electrode of a capacitor
    2.
    发明授权
    Method for forming a tungsten upper electrode of a capacitor 有权
    形成电容器的钨上电极的方法

    公开(公告)号：US06190994B1

    公开(公告)日：2001-02-20

    申请号：US09340375

    申请日：1999-06-28

    申请人： Hwan Seok Seo

    发明人： Hwan Seok Seo

    IPC分类号： H01L2120

    CPC分类号： H01L28/75 ,  H01L21/28556 ,  H01L28/55 ,  H01L28/60

    摘要： There is provided a method for forming a capacitor of a semiconductor device capable of preventing a dielectric layer from being damaged in forming a tungsten upper electrode on a dielectic layer, and preventing tungsten siliside from being formed on a tungsten film in the following processes. In the present invention, for protecting a dielectric layer, a polisilicon layer is formed on a dielectric layer as a sacrifical reduction layer. Then, a tungsten seed layer is formed on the dielectric layer by reducing WF6 with the polysilicon layer. After that, a tungsten film to be an upper electrode is formed by subsequently carrying out a deposition process using the reaction of WF6 and H2 or SiH4 Then, for preventing tungsten silicide film from being formed in following thermal process, a thermal process is performed in ammonia(NH3) cointaining ambient, or a plasma process using a nitrogen gas or an ammonia gas is performed to nitrize the surface of the tungsten film.

    摘要翻译： 提供一种形成半导体器件的电容器的方法，该半导体器件的电容器能够防止介电层在介电层上形成钨上电极时被损坏，并且在以下工序中防止在钨膜上形成硅化钨。 在本发明中，为了保护电介质层，在作为牺牲还原层的电介质层上形成有硅层。 然后，通过用多晶硅层还原WF6在电介质层上形成钨种子层。 之后，通过随后使用WF6和H2或SiH4的反应进行沉积工艺来形成上电极的钨膜。然后，为了防止在随后的热处理中形成硅化钨膜，进行热处理 使用氨（NH 3）络合环境，或使用氮气或氨气的等离子体工艺进行氮化，以使钨膜的表面发酵。

    REFLECTIVE MASKS FOR USE IN EXTREME ULTRAVIOLET LITHOGRAPHY APPARATUS AND METHODS OF MANUFACTURING THE SAME
    3.
    发明申请
    REFLECTIVE MASKS FOR USE IN EXTREME ULTRAVIOLET LITHOGRAPHY APPARATUS AND METHODS OF MANUFACTURING THE SAME 有权
    用于极端超紫外线光刻设备的反射掩膜及其制造方法

    公开(公告)号：US20160116835A1

    公开(公告)日：2016-04-28

    申请号：US14827440

    申请日：2015-08-17

    申请人： Seong-sue KIM ,  Hwan-seok SEO ,  In-sung KIM ,  Tae-geun KIM

    发明人： Seong-sue KIM ,  Hwan-seok SEO ,  In-sung KIM ,  Tae-geun KIM

    IPC分类号： G03F1/24

    CPC分类号： G03F1/24

    摘要： Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.

    摘要翻译： 反射掩模及其制造方法包括掩模基板上的反射多层，在主沟槽中彼此间隔开的多个支撑图案。 多个支撑图案位于反射多层的主沟槽中。 多个支撑图案对应于未转印到曝光目标基板上的反射掩模的区域。 支撑图案分隔主沟槽以形成多个辅助沟槽。 反射罩还包括在辅助沟槽中包括多个辅助光吸收图案的光吸收图案。

    BEAM GENERATOR
    4.
    发明申请
    BEAM GENERATOR 有权
    光束发生器

    公开(公告)号：US20130028273A1

    公开(公告)日：2013-01-31

    申请号：US13545733

    申请日：2012-07-10

    申请人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    发明人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    IPC分类号： H01S3/30 ,  H01S3/02

    CPC分类号： G03F7/70025 ,  G03F1/84 ,  G03F7/70575

    摘要： A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70° with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit.

    摘要翻译： 用于空间图像生成装置的光束发生器包括用于发射激光束的激光源和用于通过处理激光束来产生短波长光束的短波长光束源，使得短波长光束相干并具有比波长短的波长 激光束的。 光谱单元包括石英板和涂覆在石英板的表面上的光谱层。 光谱层相对于激光束具有大于70°的布鲁斯特角，使得短波长光束不受激光束从光谱单元反射，增加了短波束的反射率，同时降低了激光的反射率和吸收率 光束在光谱单位。

    EUV projection lens and optic system having the same
    6.
    发明申请
    EUV projection lens and optic system having the same 有权
    EUV投影透镜和具有相同的光学系统

    公开(公告)号：US20110042587A1

    公开(公告)日：2011-02-24

    申请号：US12805003

    申请日：2010-07-07

    申请人： Dong-Gun LEE ,  Seong-Sue KIM ,  Hwan-Seok SEO

    发明人： Dong-Gun LEE ,  Seong-Sue KIM ,  Hwan-Seok SEO

    IPC分类号： G21K5/10 ,  G02B13/14 ,  G02B5/18

    CPC分类号： G21K1/06 ,  G02B5/1838 ,  G02B5/1842 ,  G02B5/1871 ,  G02B27/4222 ,  G21K2201/067

    摘要： An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.

    摘要翻译： EUV投影透镜包括基板和基板上的同心衍射图案。 同心衍射图案相对于EUV光具有异相高度，并且包括在异相高度下EUV光透过率高于约50％的材料。 EUV投影透镜具有高的一阶衍射光效率，并且具有EUV投影透镜的光学系统具有高分辨率。

    Beam generator
    7.
    发明授权
    Beam generator 有权
    梁发电机

    公开(公告)号：US09025624B2

    公开(公告)日：2015-05-05

    申请号：US13545733

    申请日：2012-07-10

    申请人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    发明人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    IPC分类号： H01S3/30 ,  H01S3/02 ,  G03F7/20 ,  G03F1/84

    CPC分类号： G03F7/70025 ,  G03F1/84 ,  G03F7/70575

    摘要： A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70° with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit.

    摘要翻译： 用于空间图像生成装置的光束发生器包括用于发射激光束的激光源和用于通过处理激光束来产生短波长光束的短波长光束源，使得短波长光束相干并具有比波长短的波长 激光束的。 光谱单元包括石英板和涂覆在石英板的表面上的光谱层。 光谱层相对于激光束具有大于70°的布鲁斯特角，使得短波长光束不受激光束从光谱单元反射，增加了短波束的反射率，同时降低了激光的反射率和吸收率 光束在光谱单位。

    EUV projection lens and optic system having the same
    9.
    发明授权
    EUV projection lens and optic system having the same 有权
    EUV投影透镜和具有相同的光学系统

    公开(公告)号：US08637840B2

    公开(公告)日：2014-01-28

    申请号：US12805003

    申请日：2010-07-07

    申请人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    发明人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    IPC分类号： G02B5/18

    CPC分类号： G21K1/06 ,  G02B5/1838 ,  G02B5/1842 ,  G02B5/1871 ,  G02B27/4222 ,  G21K2201/067

    摘要： An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.

    摘要翻译： EUV投影透镜包括基板和基板上的同心衍射图案。 同心衍射图案相对于EUV光具有异相高度，并且包括在异相高度下EUV光透过率高于约50％的材料。 EUV投影透镜具有高的一阶衍射光效率，并且具有EUV投影透镜的光学系统具有高分辨率。

    Method of manufacturing mask structure
    10.
    发明申请
    Method of manufacturing mask structure 审中-公开
    掩模结构的制造方法

    公开(公告)号：US20110065029A1

    公开(公告)日：2011-03-17

    申请号：US12882652

    申请日：2010-09-15

    申请人： Hwan-Seok Seo ,  Byoung-Sup Ahn ,  Dong-Gun Lee

    发明人： Hwan-Seok Seo ,  Byoung-Sup Ahn ,  Dong-Gun Lee

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method of forming a mask structure for an extreme ultraviolet ray lithography (EUVL) process includes defining a substrate including a first area and a second area, such that the first area has a pattern structure configured to selectively transmit light for the EUVL process and the second area encloses the first area, forming a reflection layer on the substrate, the reflection layer including alternately stacked molybdenum layers and silicon layers on the substrate, forming a capping layer on the reflection layer, forming an absorption pattern on the capping layer, the absorption pattern including a central portion corresponding to the first area of the substrate and a peripheral portion corresponding to the second area of the substrate, and forming a blind layer on the peripheral portion of the absorption pattern.

    摘要翻译： 形成用于极紫外线光刻（EUVL）工艺的掩模结构的方法包括限定包括第一区域和第二区域的衬底，使得第一区域具有被配置为选择性地透射EUVL工艺的光的图案结构， 第二区域包围第一区域，在衬底上形成反射层，反射层在衬底上包括交替堆叠的钼层和硅层，在反射层上形成覆盖层，在覆盖层上形成吸收图案，吸收 图案包括对应于基板的第一区域的中心部分和对应于基板的第二区域的周边部分，并且在吸收图案的周边部分上形成盲层。