Membrane, method for manufacturing the same, and composite membrane including the same
    2.
    发明授权
    Membrane, method for manufacturing the same, and composite membrane including the same 有权
    膜及其制造方法以及包含该膜的复合膜

    公开(公告)号:US09156009B2

    公开(公告)日:2015-10-13

    申请号:US13330015

    申请日:2011-12-19

    Abstract: Example embodiments relate to a membrane, a method of manufacturing the same, and a composite membrane including the same. The membrane may include a polyacrylonitrile-based copolymer that includes a hydrophobic side chain and/or a hydrophobic repeating unit. The membrane may include a skin layer and a porous layer. A thickness ratio of the skin layer relative to the porous layer may be about 0.01 or less. The skin layer may have a thickness of about 1 μm or less. The membrane may have a relatively high water flux. When using the membrane, a water treatment module having higher energy efficiency may be achieved.

    Abstract translation: 实施例涉及膜,其制造方法和包括该膜的复合膜。 膜可以包括包含疏水侧链和/或疏水重复单元的基于聚丙烯腈的共聚物。 膜可以包括表皮层和多孔层。 表皮层相对于多孔层的厚度比可以为约0.01以下。 皮肤层的厚度可以为1μm以下。 膜可能具有相对较高的水通量。 当使用膜时,可以实现具有更高能量效率的水处理模块。

    CAPACITIVE FINGERPRINT SENSOR
    4.
    发明申请
    CAPACITIVE FINGERPRINT SENSOR 有权
    电容指纹传感器

    公开(公告)号:US20130314148A1

    公开(公告)日:2013-11-28

    申请号:US13556551

    申请日:2012-07-24

    CPC classification number: G06K9/0002 H03K17/9622

    Abstract: The capacitive fingerprint sensor according to the exemplary embodiments of the present invention includes: a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 in which the amount of currents flowing therethrough changes depending on an output voltage of the fingerprint sensing electrode Cfp; a second transistor T2 in which the amount of currents flowing therethrough changes due to a difference between the currents flowing through the first transistor T1; and a third transistor T3 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal.

    Abstract translation: 根据本发明的示例性实施例的电容式指纹传感器包括:用于感测人类指纹的指纹感测电极Cfp; 其中流过其中的电流量根据指纹感测电极Cfp的输出电压而变化的第一晶体管T1; 其中流过其中的电流量由于流过第一晶体管T1的电流之间的差异而变化的第二晶体管T2; 以及第三晶体管T3,其复位第一晶体管T1的栅电极,并经由脉冲信号提供与第一晶体管T1的栅电极的电容耦合。

    User identification and verification system and method for a mobile terminal
    8.
    发明申请
    User identification and verification system and method for a mobile terminal 审中-公开
    移动终端的用户识别和验证系统和方法

    公开(公告)号:US20050207626A1

    公开(公告)日:2005-09-22

    申请号:US11087195

    申请日:2005-03-22

    Applicant: Hyo Kang Taek Kim

    Inventor: Hyo Kang Taek Kim

    CPC classification number: G07C9/00158 G06F3/03547 G06F21/32 G06F2203/0338

    Abstract: A mobile terminal having an identification system is disclosed. The mobile terminal comprises a display unit for displaying an image, a transceiver unit for providing wireless transmission and reception, a fingerprint identification unit for detecting direction data from at least one fingerprint movement of a user, and a controller for controlling an operation to be performed in response to the direction data.

    Abstract translation: 公开了一种具有识别系统的移动终端。 移动终端包括用于显示图像的显示单元,用于提供无线发送和接收的收发器单元,用于从用户的至少一个指纹移动检测方向数据的指纹识别单元,以及用于控制要执行的操作的控制器 响应方向数据。

    Method for dry etching a semiconductor wafer
    9.
    发明申请
    Method for dry etching a semiconductor wafer 有权
    用于干蚀刻半导体晶片的方法

    公开(公告)号:US20050112878A1

    公开(公告)日:2005-05-26

    申请号:US10506478

    申请日:2002-04-19

    Applicant: Hyo Kang

    Inventor: Hyo Kang

    CPC classification number: H01L21/3065

    Abstract: Disclosed a method for dry etching a semiconductor wafer by a plasma generated between a power-supplied first electrode and a grounded second electrode. After the bottom surface of the edge of the wafer is in contact with the first electrode, and the top surface of the edge and the side surface of the wafer are etched by ionized plasma species generated by the plasma discharge of reactive ion etching. Then, after the upper surface of the edge of the wafer is in contact with the second electrode, and the bottom surface of the edge and the side surface of the wafer are etched by radicalized plasma species generated by the plasma discharge of plasma etching.

    Abstract translation: 公开了一种通过在供电的第一电极和接地的第二电极之间产生的等离子体来干蚀刻半导体晶片的方法。 在晶片的边缘的底表面与第一电极接触之后,并且通过由反应离子蚀刻的等离子体放电产生的离子化等离子体物质蚀刻晶片的边缘的顶表面和晶片的侧表面。 然后,在晶片的边缘的上表面与第二电极接触之后,并且通过等离子体蚀刻的等离子体放电产生的自由基化等离子体物质蚀刻晶片的底部表面和晶片的侧表面。

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