公开(公告)号：US20110104591A1

公开(公告)日：2011-05-05

申请号：US12909395

申请日：2010-10-21

申请人： Il-Yong Jang ,  Hoon Kim ,  Hye-Kyoung Lee ,  Sang-Gyun Woo ,  Dong-Seok Nam

发明人： Il-Yong Jang ,  Hoon Kim ,  Hye-Kyoung Lee ,  Sang-Gyun Woo ,  Dong-Seok Nam

IPC分类号： G03F1/00

CPC分类号： G03F1/26 ,  G03F1/32

摘要： Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

摘要翻译： 提供了半色调相移光掩模，其包括被配置为透射光的基板; 基板上的移动图案，包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案，盲区的移位图案的厚度大于基板的厚度 图案区域，并且被配置为部分地透射光; 以及遮光图案，其形成在所述遮光区域中的所述移动图案上，并且被构造成屏蔽所述光。 本文还提供了相关方法。

公开(公告)号：US07560198B2

公开(公告)日：2009-07-14

申请号：US11145985

申请日：2005-06-07

申请人： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

发明人： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

IPC分类号： G03F1/00

CPC分类号： G03F1/36

摘要： A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

摘要翻译： 光掩模在主区域中具有主掩模图案，在周边区域中具有浓度校正图案，以及插入在主掩模图案和密度校正图案之间的曝光阻挡图案。 曝光阻挡图案被配置为防止将密度校正图案转录到晶片。 光掩模是通过提供其上设置有掩模层和光致抗蚀剂层的掩模基板制成的，提供至少指定主掩模图案的设计数据，并且使用该设计数据来导出控制光致抗蚀剂曝光的曝光数据 层。 曝光数据包括指定曝光阻挡图案的信息，由密度校正图案占据的外围区域的部分以及由密度校正图案占据的外围区域的那部分的图案密度。

公开(公告)号：US20050042526A1

公开(公告)日：2005-02-24

申请号：US10913529

申请日：2004-08-09

申请人： Jeong-yun Lee ,  Ka-soon Yim ,  Jae-hee Hwang ,  Il-yong Jang

发明人： Jeong-yun Lee ,  Ka-soon Yim ,  Jae-hee Hwang ,  Il-yong Jang

IPC分类号： B32B9/00 ,  B32B15/00 ,  B32B17/06 ,  G03F1/32 ,  G03F1/58 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/3065

CPC分类号： G03F1/26 ,  G03F1/54 ,  G03F1/80

摘要： A photomask blank includes a hard mask having an excellent etch selectivity with respect to an opaque layer. The photomask blank includes a light-transmissive substrate, an opaque chromium layer disposed on the light-transmissive substrate, and a hard mask layer disposed on the opaque chromium layer. The hard mask layer is of a conductive material having an etch selectivity of at least 3:1 with respect to the opaque chromium layer against an etch gas mixture including chlorine gas and oxygen gas. Also, a resist layer is disposed on the hard mask layer. Alternatively, a phase shift layer can be interposed between the light-transmissive substrate and the opaque chromium layer. Preferably, the hard mask layer is formed of Mo or MoSi. First, the resist layer is patterned, and the hard mask is etched using the patterned resist as an etch mask. Then the chromium layer is etched using the patterned hard mask as an etch mask.

摘要翻译： 光掩模坯料包括相对于不透明层具有优异蚀刻选择性的硬掩模。 光掩模坯料包括透光基板，设置在透光基板上的不透明铬层和设置在不透明铬层上的硬掩模层。 硬掩模层是相对于包括氯气和氧气的蚀刻气体混合物的不透明铬层的蚀刻选择性至少为3:1的导电材料。 此外，在硬掩模层上设置抗蚀剂层。 或者，可以在透光基板和不透明铬层之间插入相移层。 优选地，硬掩模层由Mo或MoSi形成。 首先，对抗蚀剂层进行图案化，并使用图案化的抗蚀剂作为蚀刻掩模蚀刻硬掩模。 然后使用图案化的硬掩模作为蚀刻掩模蚀刻铬层。

公开(公告)号：US08329363B2

公开(公告)日：2012-12-11

申请号：US12909395

申请日：2010-10-21

申请人： Il-Yong Jang ,  Hoon Kim ,  Hye-Kyoung Lee ,  Sang-Gyun Woo ,  Dong-Seok Nam

发明人： Il-Yong Jang ,  Hoon Kim ,  Hye-Kyoung Lee ,  Sang-Gyun Woo ,  Dong-Seok Nam

IPC分类号： G03F1/32

CPC分类号： G03F1/26 ,  G03F1/32

摘要： Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

摘要翻译： 提供了半色调相移光掩模，其包括被配置为透射光的基板; 基板上的移动图案，包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案，盲区的移位图案的厚度大于基板的厚度 图案区域，并且被配置为部分地透射光; 以及遮光图案，其形成在所述遮光区域中的所述移动图案上，并且被构造成屏蔽所述光。 本文还提供了相关方法。

公开(公告)号：US20060148263A1

公开(公告)日：2006-07-06

申请号：US11324281

申请日：2006-01-04

申请人： Yo-han Choi ,  Il-yong Jang ,  Jeong-yun Lee

发明人： Yo-han Choi ,  Il-yong Jang ,  Jeong-yun Lee

IPC分类号： H01L21/461

CPC分类号： G03F1/26 ,  G03F1/30 ,  H01J37/3244 ,  H01J2237/022 ,  H01L21/67201

摘要： A dry etching apparatus may include a dry etching chamber and a door chamber. The apparatus may further include a load lock chamber configured to connect the dry etching chamber and the door chamber in a vacuum state. A gas injector and an ionizer may be configured inside the door chamber or the load lock chamber. A gas supplying source may be disposed out of the chambers to supply a determined gas to the gas injector and the ionizer. A method of fabricating a phase shift mask using the dry etching apparatus may include removing particles attached to the surface of a mask in the door chamber or the load lock chamber during an etch process by the gas injector and the ionizer configured inside the door chamber or the load lock chamber of the etching apparatus.

摘要翻译： 干蚀刻装置可以包括干蚀刻室和门室。 该装置还可以包括负载锁定室，其被配置为在真空状态下连接干蚀刻室和门室。 气体注入器和离子发生器可以构造在门室或负载锁定室内。 气体供应源可以设置在室外，以向气体喷射器和离子发生器供应确定的气体。 使用干蚀刻装置制造相移掩模的方法可以包括在蚀刻过程期间通过构造在门室内的气体注射器和离子发生器去除附着到门室或加载锁定室中的掩模表面的颗粒，或 蚀刻装置的负载锁定室。

公开(公告)号：US20060051684A1

公开(公告)日：2006-03-09

申请号：US11145985

申请日：2005-06-07

申请人： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

发明人： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

IPC分类号： G06F17/50 ,  G03C5/00 ,  G03F1/00

CPC分类号： G03F1/36

摘要： A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

公开(公告)号：US20060019178A1

公开(公告)日：2006-01-26

申请号：US11177434

申请日：2005-07-11

申请人： Jeong-Yun Lee ,  Seong-Woon Choi ,  Il-Yong Jang ,  Won-Suk Ahn ,  Sung-Jae Han

发明人： Jeong-Yun Lee ,  Seong-Woon Choi ,  Il-Yong Jang ,  Won-Suk Ahn ,  Sung-Jae Han

IPC分类号： C23C14/00 ,  G06K9/00 ,  C23C14/32 ,  G03F1/00 ,  C23F1/00 ,  C03C25/68 ,  C03C15/00 ,  B44C1/22

CPC分类号： G03F1/82 ,  G03F1/26 ,  G03F1/32

摘要： A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.

公开(公告)号：US20120100465A1

公开(公告)日：2012-04-26

申请号：US13231313

申请日：2011-09-13

申请人： IL-Yong JANG ,  Byung-Gook Kim

发明人： IL-Yong JANG ,  Byung-Gook Kim

IPC分类号： G03F1/00

CPC分类号： G03F1/50 ,  G03F1/54

摘要： A photomask includes a pattern area and a blind area, a first opaque pattern disposed on the blind area and having a first thickness, and a second opaque pattern disposed on the pattern area and having a second thickness smaller than the first thickness. The first and second opaque patterns are formed of the same material.

摘要翻译： 光掩模包括图案区域和盲区，设置在盲区上并具有第一厚度的第一不透明图案和布置在图案区域上并且具有小于第一厚度的第二厚度的第二不透明图案。 第一和第二不透明图案由相同的材料形成。

公开(公告)号：US07371484B2

公开(公告)日：2008-05-13

申请号：US10913529

申请日：2004-08-09

申请人： Jeong-yun Lee ,  Ka-soon Yim ,  Jae-hee Hwang ,  Il-yong Jang

发明人： Jeong-yun Lee ,  Ka-soon Yim ,  Jae-hee Hwang ,  Il-yong Jang

IPC分类号： G03F1/00

CPC分类号： G03F1/26 ,  G03F1/54 ,  G03F1/80

摘要： A photomask blank includes a hard mask having an excellent etch selectivity with respect to an opaque layer. The photomask blank includes a light-transmissive substrate, an opaque chromium layer disposed on the light-transmissive substrate, and a hard mask layer disposed on the opaque chromium layer. The hard mask layer is of a conductive material having an etch selectivity of at least 3:1 with respect to the opaque chromium layer against an etch gas mixture including chlorine gas and oxygen gas. Also, a resist layer is disposed on the hard mask layer. Alternatively, a phase shift layer can be interposed between the light-transmissive substrate and the opaque chromium layer. Preferably, the hard mask layer is formed of Mo or MoSi. First, the resist layer is patterned, and the hard mask is etched using the patterned resist as an etch mask. Then the chromium layer is etched using the patterned hard mask as an etch mask.

摘要翻译： 光掩模坯料包括相对于不透明层具有优异蚀刻选择性的硬掩模。 光掩模坯料包括透光基板，设置在透光基板上的不透明铬层和设置在不透明铬层上的硬掩模层。 硬掩模层是相对于包括氯气和氧气的蚀刻气体混合物的不透明铬层的蚀刻选择性至少为3:1的导电材料。 此外，在硬掩模层上设置抗蚀剂层。 或者，可以在透光基板和不透明铬层之间插入相移层。 优选地，硬掩模层由Mo或MoSi形成。 首先，对抗蚀剂层进行图案化，并使用图案化的抗蚀剂作为蚀刻掩模蚀刻硬掩模。 然后使用图案化的硬掩模作为蚀刻掩模蚀刻铬层。

公开(公告)号：US20160109794A1

公开(公告)日：2016-04-21

申请号：US14849006

申请日：2015-09-09

申请人： IL-yong JANG ,  Hyung-ho KO ,  Jin-sang YOON

发明人： IL-yong JANG ,  Hyung-ho KO ,  Jin-sang YOON

IPC分类号： G03F1/26 ,  G03F7/22

CPC分类号： G03F7/22 ,  G03F1/32 ,  G03F1/42 ,  G03F7/203

摘要： A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

摘要翻译： 相移掩模包括衬底，衬底上的第二相移图案，延伸到衬底的最外周边的第二相移图案，第二相移图案由对半导体衬底的光透射的材料形成 所述第一波长和所述基板对于所述第一波长的光基本上是透明的，使得所述掩模以所述第二相移图案透射所述第一波长的光的约2至约10％，并且在所述基板上发射第一相移图案， 第二相移图案设置在基板的最外周边与第一相移图案之间。