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    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES
    3.
    发明申请
    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES 审中-公开
    具有Si和/或SiN波长的环形谐振器

    公开(公告)号：US20130156369A1

    公开(公告)日：2013-06-20

    申请号：US13535746

    申请日：2012-06-28

    Applicant: Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    Inventor： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    IPC: G02B6/12

    CPC classification number: G02B6/12007 ,  G02B2006/12061

    Abstract: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

    Abstract translation: 提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内， 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 有权
    半导体器件及其形成方法

    公开(公告)号：US20110133306A1

    公开(公告)日：2011-06-09

    申请号：US12788542

    申请日：2010-05-27

    Applicant: In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    Inventor： In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    IPC: H01L29/06 ,  H01L21/762

    CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

    Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

    Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

    INTERBAND TUNNELING INTERSUBBAND TRANSITION SEMICONDUCTOR LASER
    7.
    发明申请
    INTERBAND TUNNELING INTERSUBBAND TRANSITION SEMICONDUCTOR LASER 有权

    公开(公告)号：US20080151956A1

    公开(公告)日：2008-06-26

    申请号：US11952408

    申请日：2007-12-07

    Applicant: Gyungock KIM ,  In Gyoo KIM ,  Junghyung PYO ,  Ki Seok CHANG

    Inventor： Gyungock KIM ,  In Gyoo KIM ,  Junghyung PYO ,  Ki Seok CHANG

    IPC: H01S5/323

    CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

    Abstract: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.

    Abstract translation: 公开了一种带间谐振隧穿带间过渡激光器，并且包括半导体衬底和形成在半导体衬底上的第一覆层，有源区结构层和第二覆层。 有源区结构层包括量子阱层和量子势垒层，其交替堆叠并具有破坏的能带隙。 因此，带间共振隧穿带间过渡激光器以级联模式工作，其中载流子系统中的子带间辐射跃迁和带间隧穿在连续重复地发生在有源区结构层中，从而可以通过简单紧凑的结构实现高输出。

    Avalanche quantum intersubband transition semiconductor laser
    8.
    发明申请
    Avalanche quantum intersubband transition semiconductor laser 审中-公开
    雪崩量子子带内过渡半导体激光器

    公开(公告)号：US20070064757A1

    公开(公告)日：2007-03-22

    申请号：US11492920

    申请日：2006-07-26

    Applicant: Gyung Ock Kim ,  In Gyoo Kim ,  Ki Joong Lee ,  Cheol Kyun Lee

    Inventor： Gyung Ock Kim ,  In Gyoo Kim ,  Ki Joong Lee ,  Cheol Kyun Lee

    IPC: H01S5/00

    CPC classification number: H01S5/3402 ,  B82Y20/00

    Abstract: Provided is an avalanche quantum intersubband transition semiconductor laser. The laser includes: a first cladding layer, a first wave guide layer, an active region, a second wave guide layer, and a second cladding layer formed on a semiconductor substrate, wherein the active region consists of multiple stacks (periods) of a unit-cell structure, which is comprised of a carrier-multiplication layer structure for multiplying carriers, a carrier guide layer structure, and an QW active region to which carriers are injected, wherein intersubband optical radiative transitions of the carriers occur. Here, the carriers multiplied while passing though the carrier-multiplication layer structure, and injected into a optical transition level of the QW active region can achieve the high population inversion effectively, thereby high laser output power can be obtained with less stacked compact structure.

    Abstract translation: 提供了一种雪崩量子子带内过渡半导体激光器。 激光器包括：形成在半导体衬底上的第一覆层，第一波导层，有源区，第二波导层和第二覆层，其中有源区由单元的多个堆叠（周期）组成 - 单元结构，其由用于乘法器的载波倍增层结构，载波引导层结构和注入载流子的QW有源区组成，其中载波的子带间光辐射跃迁发生。 这里，载波在通过载波倍增层结构的同时相乘，并且注入到QW有源区的光跃迁电平中可以有效地实现高群体反转，从而可以获得较小的堆叠紧凑结构的高激光输出功率。

    Semiconductor devices and methods of forming the same
    9.
    发明授权
    Semiconductor devices and methods of forming the same 有权
    半导体器件及其形成方法

    公开(公告)号：US08288185B2

    公开(公告)日：2012-10-16

    申请号：US12788542

    申请日：2010-05-27

    Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    IPC: H01L21/00

    CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

    Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

    Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

    Method of forming optical waveguide
    10.
    发明授权
    Method of forming optical waveguide 有权
    光波导形成方法

    公开(公告)号：US08017420B2

    公开(公告)日：2011-09-13

    申请号：US12491443

    申请日：2009-06-25

    Applicant: In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

    Inventor： In-Gyoo Kim ,  Dong-Woo Suh ,  Gyung-Ock Kim

    IPC: H01L21/00

    CPC classification number: G02B6/136 ,  G02B6/132

    Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

    Abstract translation: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。

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