公开(公告)号：US09954130B2

公开(公告)日：2018-04-24

申请号：US15061110

申请日：2016-03-04

Applicant: Intellectual Keystone Technology LLC

Inventor： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

IPC: H01L31/0232 ,  H01L31/065 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/065 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

公开(公告)号：US20150179104A1

公开(公告)日：2015-06-25

申请号：US14550706

申请日：2014-11-21

Applicant: INTELLECTUAL KEYSTONE TECHNOLOGY LLC

Inventor： Takashi MIYAZAWA

IPC: G09G3/32

CPC classification number: G09G3/3266 ,  G09G3/3233 ,  G09G2300/0465 ,  G09G2300/0814 ,  G09G2300/0861 ,  G09G2300/0876 ,  G09G2310/08 ,  G09G2320/043 ,  H05B33/0896 ,  Y02B20/36

Abstract: At a writing time, a first transistor 412 is turned on so that a data signal Xj is supplied to one end of a capacitor 420. At this time, since a second transistor 414 is turned off, driving current does not flow to an organic light emitting diode (OLED) device 430. A power supply voltage Vdd is supplied to the other end of a capacitor through a power supply line L. However, since the driving current does not flow at the writing time, the power supply voltage Vdd is not reduced by the wiring line resistance of the power supply line L. On the other hand, at an emission time, the first transistor 412 is turned off and the second transistor 414 is turned on. Therefore, the driving current is supplied to the OLED device 430.

Abstract translation: 在写入时，第一晶体管412导通，使得数据信号Xj被提供给电容器420的一端。此时，由于第二晶体管414截止，所以驱动电流不会流到有机光 发光二极管（OLED）器件430.电源电压Vdd通过电源线L提供给电容器的另一端。然而，由于驱动电流在写入时不流动，所以电源电压Vdd不是 减少了电源线L的布线电阻。另一方面，在发光时间，第一晶体管412截止，第二晶体管414导通。 因此，驱动电流被提供给OLED器件430。

公开(公告)号：US20160276506A1

公开(公告)日：2016-09-22

申请号：US15075528

申请日：2016-03-21

Applicant: Intellectual Keystone Technology LLC

Inventor： Min-Seok OH ,  Doo-Youl LEE ,  Young-Jin KIM ,  Min PARK ,  Yun-Seok LEE ,  Nam-Kyu SONG ,  Dong-Seop KIM ,  Cho-Young LEE ,  Chan-Bin MO ,  Young-Su KIM ,  Hoon-Ha JEON ,  Yeon-Ik JANG ,  Jun-Ki HONG ,  Young-Sang PARK ,  Chan-Yoon JUNG

IPC: H01L31/0352 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/05

CPC classification number: H01L31/03529 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/547

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

公开(公告)号：US20160190374A1

公开(公告)日：2016-06-30

申请号：US15061110

申请日：2016-03-04

Applicant: Intellectual Keystone Technology LLC

Inventor： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

IPC: H01L31/065 ,  H01L31/0216

CPC classification number: H01L31/065 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.