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    ULTRA-SENSITIVE GAS SENSOR USING OXIDE SEMICONDUCTOR NANOFIBER AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    ULTRA-SENSITIVE GAS SENSOR USING OXIDE SEMICONDUCTOR NANOFIBER AND METHOD OF FABRICATING THE SAME 审中-公开
    使用氧化物半导体纳米纤维的超声波气体传感器及其制造方法

    公开(公告)号：US20100147684A1

    公开(公告)日：2010-06-17

    申请号：US12503647

    申请日：2009-07-15

    申请人： Jin Ah PARK ,  Su Jae Lee ,  Jae Hyun Moon ,  Tae Hyoung Zhung

    发明人： Jin Ah PARK ,  Su Jae Lee ,  Jae Hyun Moon ,  Tae Hyoung Zhung

    IPC分类号： G01N27/26 ,  B05D5/12

    CPC分类号： G01N27/127

    摘要： An ultra-sensitive gas sensor using semiconductor oxide nanofibers and a method of fabricating the same are provided. The gas sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a semiconductor metal oxide nanofibers layer formed on the metal electrode and having nanoparticles of high sensitivity coated thereon. The method of fabricating a semiconductor oxide nanofibers gas sensor includes fabricating an oxide using a solution for electrospinning, electrospinning the solution, performing an annealing process to form an oxide semiconductor nanofiber, and partially coating a nano-sized metal oxide or metal catalyst particle having high sensitivity to a specific gas on a surface of the nanofiber having a large specific surface area. As a result, a semiconductor oxide nanofibers gas sensor having ultra sensitivity, high selectivity, fast response and long-term stability can be fabricated.

    摘要翻译： 提供了使用半导体氧化物纳米纤维的超灵敏气体传感器及其制造方法。 气体传感器包括绝缘基板，形成在绝缘基板上的金属电极和形成在金属电极上并具有高敏感度的纳米颗粒的半导体金属氧化物纳米纤维层。 制造半导体氧化物纳米纤维气体传感器的方法包括使用静电纺丝溶液，静电纺丝溶液制造氧化物，进行退火处理以形成氧化物半导体纳米纤维，并部分涂覆具有高的氧化物半导体纳米纤维的纳米尺寸的金属氧化物或金属催化剂颗粒 对具有大比表面积的纳米纤维的表面上的特定气体的敏感性。 结果，可以制造具有超灵敏度，高选择性，快速响应和长期稳定性的半导体氧化物纳米纤维气体传感器。

    Method of fabricating thin film transistor having multilayer structure and active matrix display device including the thin film transistor
    3.
    发明授权
    Method of fabricating thin film transistor having multilayer structure and active matrix display device including the thin film transistor 失效
    制造具有多层结构的薄膜晶体管的方法和包括该薄膜晶体管的有源矩阵显示装置

    公开(公告)号：US07642143B2

    公开(公告)日：2010-01-05

    申请号：US11870809

    申请日：2007-10-11

    申请人： Yong Hae Kim ,  Choong Heui Chung ,  Jae Hyun Moon ,  Yoon Ho Song

    发明人： Yong Hae Kim ,  Choong Heui Chung ,  Jae Hyun Moon ,  Yoon Ho Song

    IPC分类号： H01L21/338

    CPC分类号： H01L29/78603 ,  H01L27/124 ,  H01L29/4908

    摘要： Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.

    摘要翻译： 提供了使用塑料基板制造多层薄膜晶体管的方法和包括通过该方法制造的薄膜晶体管的有源矩阵显示装置。 该方法包括：制备由塑料形成的基材; 在塑料基板上形成缓冲绝缘层; 在所述缓冲绝缘层上形成硅层; 图案化硅层以形成有源层; 在有源层上形成栅极绝缘层; 在栅绝缘层上堆叠多个栅极金属层; 图案化多个栅极金属层; 并且蚀刻形成在图案化栅极金属层的栅极绝缘层上的最低栅极金属层的拐角区域。 因此，形成栅极金属，其包括多层栅极金属层并且具有蚀刻的拐角区域，从而减小拐角的电场以减小TFT的漏电流。

    METHOD OF FABRICATING THIN FILM TRANSISTOR HAVING MULTILAYER STRUCTURE AND ACTIVE MATRIX DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR
    6.
    发明申请
    METHOD OF FABRICATING THIN FILM TRANSISTOR HAVING MULTILAYER STRUCTURE AND ACTIVE MATRIX DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 失效
    具有多层结构的薄膜晶体管的方法和包括薄膜晶体管的有源矩阵显示装置

    公开(公告)号：US20080135837A1

    公开(公告)日：2008-06-12

    申请号：US11870809

    申请日：2007-10-11

    申请人： Yong Hae KIM ,  Choong Heui CHUNG ,  Jae Hyun MOON ,  Yoon Ho SONG

    发明人： Yong Hae KIM ,  Choong Heui CHUNG ,  Jae Hyun MOON ,  Yoon Ho SONG

    IPC分类号： H01L21/84 ,  H01L51/50

    CPC分类号： H01L29/78603 ,  H01L27/124 ,  H01L29/4908

    摘要： Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.

    摘要翻译： 提供了使用塑料基板制造多层薄膜晶体管的方法和包括通过该方法制造的薄膜晶体管的有源矩阵显示装置。 该方法包括：制备由塑料形成的基材; 在塑料基板上形成缓冲绝缘层; 在所述缓冲绝缘层上形成硅层; 图案化硅层以形成有源层; 在有源层上形成栅极绝缘层; 在栅绝缘层上堆叠多个栅极金属层; 图案化多个栅极金属层; 并且蚀刻形成在图案化栅极金属层的栅极绝缘层上的最低栅极金属层的拐角区域。 因此，形成栅极金属，其包括多层栅极金属层并且具有蚀刻的拐角区域，从而减小拐角的电场以减小TFT的漏电流。