Accommodating device for different types of material

    公开(公告)号:US09650190B2

    公开(公告)日:2017-05-16

    申请号:US14422140

    申请日:2013-02-12

    申请人: Su-Jae Lee

    摘要: Provided is an accommodating device for different materials, which includes a fixed part fixed around a container neck and an operating part disposed around the fixed part and coupled thereto. An accommodating part having a storage space extends downward within the operating part, and a lower end part and an outer ring-shaped part of the accommodating part are sealed by a sealing support part and a sealing part of the fixed part disposed around the container neck and coupled thereto. In the accommodating part, a tab for breaking perforations, which is formed on a lower end of the accommodating part of the operating part, breaks the perforations formed between the sealing support part and the sealing part when a consumer rotates the operating part. During this process, a protrusion part protruding from the upper side of the sealing part is pushed downward by a side protrusion piece of the operating part so that the different type of material stored in the storage space of the accommodating device falls into the container and undergoes a mixing process. The sealing support part disposed around the outer ring-shaped part of the accommodating part and coupled thereto and the sealing part formed inside the sealing support part are configured such that an inner ring-shaped part of the sealing part tightly contacts an inner wall part of the lower end of the accommodating part so as to maintain sealing force thereof.

    CONTAINER INTENDED FOR LIQUID AND HAVING A PRESSURE ADJUSTMENT SURFACE FOR CONSTANT DISCHARGE
    2.
    发明申请
    CONTAINER INTENDED FOR LIQUID AND HAVING A PRESSURE ADJUSTMENT SURFACE FOR CONSTANT DISCHARGE 审中-公开
    用于液体的集装箱和用于恒定排放的压力调节表面

    公开(公告)号:US20150203253A1

    公开(公告)日:2015-07-23

    申请号:US14412934

    申请日:2012-04-09

    IPC分类号: B65D35/24 B65D35/44

    摘要: A container for liquid, which discharges contents when the side surfaces thereof are pressed by the fingers. A coupling unit is assembled to the top of the container body so as to discharge the pressed contents. The coupling unit has an outlet comprising a check valve which opens/shuts by means of predetermined pressure. The coupling unit having the outlet is covered with a lid for protecting the outlet. The side surfaces of the container body have pressure adjustment surfaces that protrude inwardly. Predetermined gaps are maintained between the ends of the pressure adjustment surfaces and the side surfaces of the container body, located in front of the ends of the pressure adjustment surfaces.

    摘要翻译: 一种用于液体的容器,当其侧表面被手指按压时,其将内容物排出。 联接单元组装到容器主体的顶部,以便排出压制的内容物。 联接单元具有包括通过预定压力打开/关闭的止回阀的出口。 具有出口的联接单元用盖子覆盖以保护出口。 容器主体的侧表面具有向内突出的压力调节表面。 在压力调节表面的端部和位于压力调节表面的端部前方的容器主体的侧表面之间保持预定的间隙。

    ULTRA-SENSITIVE GAS SENSOR USING OXIDE SEMICONDUCTOR NANOFIBER AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    ULTRA-SENSITIVE GAS SENSOR USING OXIDE SEMICONDUCTOR NANOFIBER AND METHOD OF FABRICATING THE SAME 审中-公开
    使用氧化物半导体纳米纤维的超声波气体传感器及其制造方法

    公开(公告)号:US20100147684A1

    公开(公告)日:2010-06-17

    申请号:US12503647

    申请日:2009-07-15

    IPC分类号: G01N27/26 B05D5/12

    CPC分类号: G01N27/127

    摘要: An ultra-sensitive gas sensor using semiconductor oxide nanofibers and a method of fabricating the same are provided. The gas sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a semiconductor metal oxide nanofibers layer formed on the metal electrode and having nanoparticles of high sensitivity coated thereon. The method of fabricating a semiconductor oxide nanofibers gas sensor includes fabricating an oxide using a solution for electrospinning, electrospinning the solution, performing an annealing process to form an oxide semiconductor nanofiber, and partially coating a nano-sized metal oxide or metal catalyst particle having high sensitivity to a specific gas on a surface of the nanofiber having a large specific surface area. As a result, a semiconductor oxide nanofibers gas sensor having ultra sensitivity, high selectivity, fast response and long-term stability can be fabricated.

    摘要翻译: 提供了使用半导体氧化物纳米纤维的超灵敏气体传感器及其制造方法。 气体传感器包括绝缘基板,形成在绝缘基板上的金属电极和形成在金属电极上并具有高敏感度的纳米颗粒的半导体金属氧化物纳米纤维层。 制造半导体氧化物纳米纤维气体传感器的方法包括使用静电纺丝溶液,静电纺丝溶液制造氧化物,进行退火处理以形成氧化物半导体纳米纤维,并部分涂覆具有高的氧化物半导体纳米纤维的纳米尺寸的金属氧化物或金属催化剂颗粒 对具有大比表面积的纳米纤维的表面上的特定气体的敏感性。 结果,可以制造具有超灵敏度,高选择性,快速响应和长期稳定性的半导体氧化物纳米纤维气体传感器。

    CAPACITIVE GAS SENSOR AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    CAPACITIVE GAS SENSOR AND METHOD OF FABRICATING THE SAME 有权
    电容式气体传感器及其制造方法

    公开(公告)号:US20100133528A1

    公开(公告)日:2010-06-03

    申请号:US12502824

    申请日:2009-07-14

    IPC分类号: H01L29/22 H01L21/28

    CPC分类号: G01N27/227 Y10S977/921

    摘要: A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.

    摘要翻译: 提供了一种电容式气体传感器及其制造方法。 电容性气体传感器包括绝缘基板,金属电极和整体形成在绝缘基板的同一平面上的微薄膜加热丝,以及涂覆在金属电极和微薄膜加热丝上的氧化物检测层。 该制造方法包括在绝缘基板上沉积金属层,蚀刻金属层,使得金属电极和微薄膜加热丝线在同一平面上形成叉指式换能器,并形成纳米晶体复合氧化物薄膜或 金属电极上的复合氧化物纳米纤维涂层和微薄膜加热丝作为检测层。 电容气体传感器可以容易地制造,并且可以具有优异的特性,例如高灵敏度,高选择性,高稳定性和低功耗。

    Method of manufacturing distributed analog phase shifter using etched ferroelectric thin film
    7.
    发明授权
    Method of manufacturing distributed analog phase shifter using etched ferroelectric thin film 失效
    使用蚀刻铁电薄膜制造分布式模拟移相器的方法

    公开(公告)号:US07192530B2

    公开(公告)日:2007-03-20

    申请号:US10796628

    申请日:2004-03-08

    IPC分类号: H01P1/18

    CPC分类号: H01P1/181

    摘要: Provided are a distributed analog phase shifter and a method of manufacturing the same, which reduce a change in a characteristic impedance while changing a phase velocity with respect to an applied voltage. In the distributed analog phase shifter, a coplanar waveguide (CPW) is formed in a line form on a substrate. A plurality of ferroelectric capacitors is periodically loaded to the CPW. The ferroelectric capacitors include a ferroelectric film in a pattern form and defines the ferroelectric film affected by the applied voltage within an area of the ferroelectric capacitors. Accordingly, the change in the phase velocity with respect to the applied voltage is maintained without the change of the CPW characteristic and a return loss characteristic and a total insertion loss are improved since a total dielectric loss of the ferroelectric film is decreased.

    摘要翻译: 提供了一种分布式模拟移相器及其制造方法,其在相对于施加电压改变相位速度的同时减小特性阻抗的变化。 在分布式模拟移相器中,共面波导(CPW)以线形式形成在基板上。 多个铁电电容器被周期性地加载到CPW。 铁电电容器包括图案形式的铁电体膜,并且限定受强电介质电容器的区域内的施加电压影响的铁电体膜。 因此,由于铁电体膜的总介电损耗降低,所以相对于施加电压的相位速度的变化保持不变,CPW特性的变化,回波损耗特性和总插入损耗得到改善。

    Capacitive gas sensor and method of fabricating the same
    8.
    发明授权
    Capacitive gas sensor and method of fabricating the same 有权
    电容式气体传感器及其制造方法

    公开(公告)号:US07816681B2

    公开(公告)日:2010-10-19

    申请号:US12502824

    申请日:2009-07-14

    IPC分类号: H01L21/28 H01L29/22

    CPC分类号: G01N27/227 Y10S977/921

    摘要: A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.

    摘要翻译: 提供了一种电容式气体传感器及其制造方法。 电容性气体传感器包括绝缘基板,金属电极和整体形成在绝缘基板的同一平面上的微薄膜加热丝,以及涂覆在金属电极和微薄膜加热丝上的氧化物检测层。 该制造方法包括在绝缘基板上沉积金属层,蚀刻金属层,使得金属电极和微薄膜加热丝线在同一平面上形成叉指式换能器,并形成纳米晶体复合氧化物薄膜或 金属电极上的复合氧化物纳米纤维涂层和微薄膜加热丝作为检测层。 电容气体传感器可以容易地制造,并且可以具有优异的特性,例如高灵敏度,高选择性,高稳定性和低功耗。

    METHOD OF FABRICATING SEMICONDUCTOR OXIDE NANOFIBERS FOR SENSOR AND GAS SENSOR USING THE SAME
    9.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR OXIDE NANOFIBERS FOR SENSOR AND GAS SENSOR USING THE SAME 审中-公开
    使用该传感器和气体传感器制造半导体氧化物纳米纤维的方法

    公开(公告)号:US20100155691A1

    公开(公告)日:2010-06-24

    申请号:US12536664

    申请日:2009-08-06

    IPC分类号: H01L29/66 H01L21/36

    摘要: A gas sensor for detecting environmentally harmful gases is provided. The sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a sensing layer formed on the metal electrode and including a semiconductor oxide (Lan+1NinO3n+1(n=1,2,3)) nanofiber. Therefore, a semiconductor oxide (Lan+1NinO3n+1(n=1,2,3)) has an ABO3-type basic crystalline structure and thus is stable in structure, and is a representative material having a nonstoichiometric composition due to oxygen defects. Since the semiconductor oxide has great oxygen defects on its surface, a great change in electrical resistance may be exhibited due to reactive gas adsorption and oxidation/reduction reaction on the oxide surface. Also, a method of fabricating the gas sensor is provided.

    摘要翻译: 提供了一种用于检测环境有害气体的气体传感器。 传感器包括绝缘基板,形成在绝缘基板上的金属电极和形成在金属电极上的包含半导体氧化物(Lan + 1NinO3n + 1(n = 1,2,3))纳米纤维的感测层。 因此,半导体氧化物(Lan + 1NinO3n + 1(n = 1,2,3))具有ABO 3型碱性结晶结构,因此结构稳定,是由于氧缺陷而具有非化学计量组成的代表性材料。 由于半导体氧化物在其表面上具有大的氧缺陷,所以由于氧化物表面上的反应性气体吸附和氧化/还原反应,可能会发生很大的电阻变化。 另外,提供了一种制造气体传感器的方法。

    Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same
    10.
    发明授权
    Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same 失效
    铁电/顺电多层薄膜,其形成方法和使用其的高频可变装置

    公开(公告)号:US07274058B2

    公开(公告)日:2007-09-25

    申请号:US11180744

    申请日:2005-07-12

    IPC分类号: H01L29/76 H01L29/94 H01L31/00

    摘要: A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.

    摘要翻译: 具有介电常数高的调谐率和小的介电损耗的铁电/直流多层薄膜,以克服介电常数的调谐率和铁电薄膜的介电损耗的限制,其形成方法和高 提供具有铁电/顺电多层薄膜的高频可变器件。 铁电/顺电多层薄膜包括在基板上形成的钙钛矿ABO 3结构顺电晶种层,外延铁电(Ba x Sr Sr 1-x < / SUB>)TiO 3薄膜形成在顺电种子层上。 高频可变装置可以实现具有高速度,低功耗,低价格和优异的微波特性的RF频率/相位可变装置。