摘要:
Provided is an accommodating device for different materials, which includes a fixed part fixed around a container neck and an operating part disposed around the fixed part and coupled thereto. An accommodating part having a storage space extends downward within the operating part, and a lower end part and an outer ring-shaped part of the accommodating part are sealed by a sealing support part and a sealing part of the fixed part disposed around the container neck and coupled thereto. In the accommodating part, a tab for breaking perforations, which is formed on a lower end of the accommodating part of the operating part, breaks the perforations formed between the sealing support part and the sealing part when a consumer rotates the operating part. During this process, a protrusion part protruding from the upper side of the sealing part is pushed downward by a side protrusion piece of the operating part so that the different type of material stored in the storage space of the accommodating device falls into the container and undergoes a mixing process. The sealing support part disposed around the outer ring-shaped part of the accommodating part and coupled thereto and the sealing part formed inside the sealing support part are configured such that an inner ring-shaped part of the sealing part tightly contacts an inner wall part of the lower end of the accommodating part so as to maintain sealing force thereof.
摘要:
A container for liquid, which discharges contents when the side surfaces thereof are pressed by the fingers. A coupling unit is assembled to the top of the container body so as to discharge the pressed contents. The coupling unit has an outlet comprising a check valve which opens/shuts by means of predetermined pressure. The coupling unit having the outlet is covered with a lid for protecting the outlet. The side surfaces of the container body have pressure adjustment surfaces that protrude inwardly. Predetermined gaps are maintained between the ends of the pressure adjustment surfaces and the side surfaces of the container body, located in front of the ends of the pressure adjustment surfaces.
摘要:
An ultra-sensitive gas sensor using semiconductor oxide nanofibers and a method of fabricating the same are provided. The gas sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a semiconductor metal oxide nanofibers layer formed on the metal electrode and having nanoparticles of high sensitivity coated thereon. The method of fabricating a semiconductor oxide nanofibers gas sensor includes fabricating an oxide using a solution for electrospinning, electrospinning the solution, performing an annealing process to form an oxide semiconductor nanofiber, and partially coating a nano-sized metal oxide or metal catalyst particle having high sensitivity to a specific gas on a surface of the nanofiber having a large specific surface area. As a result, a semiconductor oxide nanofibers gas sensor having ultra sensitivity, high selectivity, fast response and long-term stability can be fabricated.
摘要:
A nano-crystalline composite-oxide thin film for an environmental gas sensor, an environmental gas sensor using the thin film, and a method of manufacturing the environmental gas sensor are provided. The nano-crystalline composite-oxide thin film is formed of hetero-oxide nano-crystalline particles having independent crystalline phases from each other, and the environmental gas sensor including the thin film has excellent characteristics including high sensitivity, high selectivity, high stability and low power consumption.
摘要:
A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.
摘要:
Provided is a composition for cancer treatment including phytosphingosine or a derivative thereof, or a pharmaceutically acceptable salt thereof as an active ingredient.
摘要:
Provided are a distributed analog phase shifter and a method of manufacturing the same, which reduce a change in a characteristic impedance while changing a phase velocity with respect to an applied voltage. In the distributed analog phase shifter, a coplanar waveguide (CPW) is formed in a line form on a substrate. A plurality of ferroelectric capacitors is periodically loaded to the CPW. The ferroelectric capacitors include a ferroelectric film in a pattern form and defines the ferroelectric film affected by the applied voltage within an area of the ferroelectric capacitors. Accordingly, the change in the phase velocity with respect to the applied voltage is maintained without the change of the CPW characteristic and a return loss characteristic and a total insertion loss are improved since a total dielectric loss of the ferroelectric film is decreased.
摘要:
A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.
摘要:
A gas sensor for detecting environmentally harmful gases is provided. The sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a sensing layer formed on the metal electrode and including a semiconductor oxide (Lan+1NinO3n+1(n=1,2,3)) nanofiber. Therefore, a semiconductor oxide (Lan+1NinO3n+1(n=1,2,3)) has an ABO3-type basic crystalline structure and thus is stable in structure, and is a representative material having a nonstoichiometric composition due to oxygen defects. Since the semiconductor oxide has great oxygen defects on its surface, a great change in electrical resistance may be exhibited due to reactive gas adsorption and oxidation/reduction reaction on the oxide surface. Also, a method of fabricating the gas sensor is provided.
摘要:
A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.
摘要翻译:具有介电常数高的调谐率和小的介电损耗的铁电/直流多层薄膜,以克服介电常数的调谐率和铁电薄膜的介电损耗的限制,其形成方法和高 提供具有铁电/顺电多层薄膜的高频可变器件。 铁电/顺电多层薄膜包括在基板上形成的钙钛矿ABO 3结构顺电晶种层,外延铁电(Ba x Sr Sr 1-x < / SUB>)TiO 3薄膜形成在顺电种子层上。 高频可变装置可以实现具有高速度,低功耗,低价格和优异的微波特性的RF频率/相位可变装置。