BACILLUS LICHENIFORMIS B1, ALKALOPHILIC ENZYME SOLUTION AND METHOD OF PRODUCING THE SAME
    4.
    发明申请
    BACILLUS LICHENIFORMIS B1, ALKALOPHILIC ENZYME SOLUTION AND METHOD OF PRODUCING THE SAME 有权
    BACILLUS LICHENIFORMIS B1,ALKALOPHILIC ENZYME SOLUTION AND METHODS PRODUCTION THE SAME

    公开(公告)号:US20090317871A1

    公开(公告)日:2009-12-24

    申请号:US12242234

    申请日:2008-09-30

    IPC分类号: C12N9/42 C12N1/20 C12P21/02

    CPC分类号: C12N9/2437 C12R1/10

    摘要: The present invention relates to Bacillus licheniformis B1 strain, alkalophilic enzyme solution and a method for preparing the same, in particular the method for producing cellulase demonstrating optimal activity at pH 10-13 by using Bacillus licheniformis B1 strain. The enzyme produced by the method of the present invention and the enzyme solution containing the same have excellent enzyme activity in alkali condition, so that they can be effectively applied in diverse uses including the production of detergent or bio-fuel.

    摘要翻译: 本发明涉及地衣芽孢杆菌B1菌株,嗜碱性酶溶液及其制备方法,特别是通过使用地衣芽孢杆菌B1菌株在pH 10-13下显示最佳活性的纤维素酶的方法。 通过本发明的方法生产的酶和含有该酶的酶溶液在碱性条件下具有优异的酶活性,使得它们可以有效地应用于多种用途,包括生产洗涤剂或生物燃料。

    Bacillus licheniformis B1, alkalophilic enzyme solution and method of producing the same
    6.
    发明授权
    Bacillus licheniformis B1, alkalophilic enzyme solution and method of producing the same 有权
    地衣芽孢杆菌B1,嗜碱性酶溶液及其制备方法

    公开(公告)号:US08143028B2

    公开(公告)日:2012-03-27

    申请号:US12242234

    申请日:2008-09-30

    IPC分类号: C12P21/04 A61K38/47 C12N9/42

    CPC分类号: C12N9/2437 C12R1/10

    摘要: The present invention relates to Bacillus licheniformis B1 strain, alkalophilic enzyme solution and a method for preparing the same, in particular the method for producing cellulase demonstrating optimal activity at pH 10-13 by using Bacillus licheniformis B1 strain. The enzyme produced by the method of the present invention and the enzyme solution containing the same have excellent enzyme activity in alkali condition, so that they can be effectively applied in diverse uses including the production of detergent or bio-fuel.

    摘要翻译: 本发明涉及地衣芽孢杆菌B1菌株,嗜碱性酶溶液及其制备方法,特别是通过使用地衣芽孢杆菌B1菌株在pH 10-13下显示出最佳活性的纤维素酶的方法。 通过本发明的方法生产的酶和含有该酶的酶溶液在碱性条件下具有优异的酶活性,使得它们可以有效地应用于多种用途,包括生产洗涤剂或生物燃料。

    Lighting device using cold cathode fluorescent lamp
    9.
    发明申请
    Lighting device using cold cathode fluorescent lamp 失效
    照明装置采用冷阴极荧光灯

    公开(公告)号:US20060028813A1

    公开(公告)日:2006-02-09

    申请号:US11192847

    申请日:2005-07-27

    IPC分类号: F21S4/00

    摘要: Disclosed herein is a lighting device using a cold cathode fluorescent lamp (CCFL), which has reduced size and volume and concentrates light from the CCFL, thus enhancing its luminance. The lighting device includes a casing which is open on a surface thereof, thus having an open part, with an ON/OFF switch button which protrudes through a sidewall of the casing and is used to turn on or off the lighting device; a reflective plate inserted into the casing through the open part, with a circuit board provided on a predetermined position of the reflective plate; a CCFL inserted into the reflective plate and electrically connected to the circuit board; a cover assembled with the casing and receiving the CCFL between the casing and the cover; and a socket which is assembled with each end of the casing, supports both the CCFL and the cover, and is electrically connected to the circuit board.

    摘要翻译: 本文公开了使用冷阴极荧光灯(CCFL)的照明装置,其具有减小的尺寸和体积并且集中来自CCFL的光,从而增强其亮度。 照明装置包括在其表面上开口的壳体,因此具有开口部分,其具有穿过壳体的侧壁突出并用于打开或关闭照明装置的ON / OFF开关按钮; 反射板,其通过所述开口部插入到所述壳体中,电路板设置在所述反射板的预定位置; CCFL插入反射板并电连接到电路板; 与壳体组装并且在壳体和盖子之间接收CCFL的盖子; 并且与壳体的每个端部组装的插座支撑CCFL和盖子,并且电连接到电路板。

    Method of forming connections with low dielectric insulating layers
    10.
    发明授权
    Method of forming connections with low dielectric insulating layers 失效
    与低介电绝缘层形成连接的方法

    公开(公告)号:US06506680B1

    公开(公告)日:2003-01-14

    申请号:US09649020

    申请日:2000-08-28

    IPC分类号: H01L2100

    CPC分类号: H01L21/76835 H01L21/76807

    摘要: In a semiconductor manufacturing method, etching control is provided by introducing a material containing a material having at least one of an —H, —C, —CH, —CH2, and —CH3 radical component, e.g., Si—O—C, in a lower portion or layer of a dielectric layer formed during a semiconductor manufacturing process. A semiconductor device made by the method includes a first dielectric layer of a material having a given amount of carbon formed on the semiconductor substrate, and a second dielectric layer of a material having a lesser amount of carbon formed on said first dielectric layer wherein the second dielectric layer has an etched pattern formed by etching the second dielectric layer to a depth determined by etching resistance of first dielectric layer. Aspects of invention are particularly useful for making a dual or single damascene structure in a semiconductor device where better control of etching depth is required for via holes and conductive lines in the semiconductor structure.

    摘要翻译: 在半导体制造方法中,通过将含有至少一种-H,-C,-CH,-CH 2和-CH 3基团组分(例如Si-OC)中的至少一种的材料引入下一个 在半导体制造过程中形成的介电层的部分或层。 通过该方法制造的半导体器件包括:形成在半导体衬底上的具有给定量的碳的材料的第一电介质层和形成在所述第一电介质层上的具有较少量的碳的材料的第二电介质层, 电介质层具有通过将第二介电层蚀刻到由第一介电层的耐腐蚀性确定的深度形成的蚀刻图案。 本发明的方面对于在半导体器件中制造双或单镶嵌结构特别有用,其中对半导体结构中的通孔和导线需要更好的蚀刻深度控制。