公开(公告)号：US20100182223A1

公开(公告)日：2010-07-22

申请号：US12691907

申请日：2010-01-22

申请人： JONG-HYUN CHOI ,  JANG-SOON IM ,  SUNG-HO KIM ,  ILJEONG LEE

发明人： JONG-HYUN CHOI ,  JANG-SOON IM ,  SUNG-HO KIM ,  ILJEONG LEE

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

摘要： An organic light emitting display device that includes a plurality of signal lines and a plurality of scan lines, a plurality of pixels arranged at intersections of ones of the plurality of signal lines and ones of the plurality of scan lines, a scan driver to supply scan signals to the plurality of scan lines, the scan driver including a first plurality of thin film transistors and a data driver to supply data signals to the plurality of signal lines, the data driver including a second plurality of thin film transistors, wherein each of said plurality of pixels includes a first thin film transistor, a second thin film transistor and an organic light emitting diode, the first transistor being connected to the organic light emitting diode, the first transistor having an active layer made out of an oxide semiconductor, the second transistor, the first plurality of thin film transistors and the second plurality of thin film transistors each having an active layer made out of poly-silicon.

摘要翻译： 一种有机发光显示装置，包括多条信号线和多条扫描线，多条像素排列在多条信号线与多条扫描线中的一条信号线的交点处，扫描驱动器提供扫描 信号到多条扫描线，扫描驱动器包括第一多个薄膜晶体管和数据驱动器，以向多条信号线提供数据信号，数据驱动器包括第二多个薄膜晶体管，其中每个所述薄膜晶体管 多个像素包括第一薄膜晶体管，第二薄膜晶体管和有机发光二极管，第一晶体管连接到有机发光二极管，第一晶体管具有由氧化物半导体制成的有源层，第二晶体管 晶体管，第一多个薄膜晶体管和第二多个薄膜晶体管各自具有由多晶硅制成的有源层。

公开(公告)号：US20080251785A1

公开(公告)日：2008-10-16

申请号：US11907874

申请日：2007-10-18

申请人： Ji-yong Noh ,  Moo-jin Kim ,  Dae-woo Lee ,  Jang-soon Im ,  Kyoung-bo Kim

发明人： Ji-yong Noh ,  Moo-jin Kim ,  Dae-woo Lee ,  Jang-soon Im ,  Kyoung-bo Kim

IPC分类号： H01L51/50 ,  H01L21/84

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/3248 ,  H01L29/458 ,  H01L51/5218

摘要： A display device includes a thin film transistor (TFT) on a substrate, the TFT including source/drain electrodes, a cover layer on the source/drain electrodes, and a light source including at least one electrode, the electrode being electrically connected to the source/drain electrodes of the TFT through the cover layer, wherein the cover layer includes a same material as the electrode of the light source.

摘要翻译： 显示装置包括在基板上的薄膜晶体管（TFT），TFT包括源/漏电极，源/漏电极上的覆盖层和包括至少一个电极的光源，该电极电连接到 通过覆盖层的TFT的源极/漏极，其中覆盖层包括与光源的电极相同的材料。

公开(公告)号：US07026201B2

公开(公告)日：2006-04-11

申请号：US11085953

申请日：2005-03-22

申请人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

发明人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

IPC分类号： H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

摘要： A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

公开(公告)号：US07678621B2

公开(公告)日：2010-03-16

申请号：US11725123

申请日：2007-03-16

申请人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

发明人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Disclosed are a crystallization pattern, and a method for crystallizing amorphous silicon. The method includes the steps of forming an amorphous silicon film on a glass substrate, forming a crystallization pattern by patterning the amorphous silicon film, and crystallizing the crystallization pattern into polycrystalline silicon by irradiating a laser onto the crystallization pattern. The crystallization pattern includes a peripheral region located within a first distance from an edge of the crystallization pattern, and an internal region located away from the edge of the crystallization pattern by more than the first distance. The internal region is divided into at least one sub-region, each sub-region includes one crystallization inducement pattern, and an edge of each sub-region is located within a second distance from the crystallization inducement pattern.

摘要翻译： 公开了结晶图案和非晶硅结晶的方法。 该方法包括以下步骤：在玻璃基板上形成非晶硅膜，通过图案化非晶硅膜形成结晶图案，并通过将激光照射到结晶​​图案上将结晶图案结晶成多晶硅。 结晶图案包括位于距离结晶图案的边缘第一距离内的周边区域以及远离结晶图案的边缘超过第一距离的内部区域。 内部区域被划分为至少一个子区域，每个子区域包括一个结晶诱导图案，并且每个子区域的边缘位于离结晶诱导图案的第二距离内。

公开(公告)号：US08592832B2

公开(公告)日：2013-11-26

申请号：US12635964

申请日：2009-12-11

申请人： Tae-Hoon Yang ,  Han-Hee Yoon ,  Kil-Won Lee ,  Jang-Soon Im ,  Ji-Yong Noh

发明人： Tae-Hoon Yang ,  Han-Hee Yoon ,  Kil-Won Lee ,  Jang-Soon Im ,  Ji-Yong Noh

IPC分类号： H01L29/18 ,  H01L29/10

CPC分类号： H01L27/3244 ,  H01L27/1218 ,  H01L27/3258 ,  H01L27/3262

摘要： An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.

摘要翻译： 一种有机发光二极管（OLED）显示装置及其制造方法，其中所述OLED显示装置包括：包括像素区域和非像素区域的衬底;设置在所述衬底上的缓冲层;设置在所述衬底上的半导体层; 缓冲层，并且包括沟道区域和源极/漏极区域，设置成对应于半导体层的沟道区域的栅极电极，将半导体层与栅电极绝缘的栅极绝缘层，电连接到 半导体层的源极/漏极区域以及使栅电极与源极/漏极绝缘的层间绝缘层，其中位于非像素区域上的缓冲层，栅极绝缘层和层间绝缘层的区域 ，并且部分去除区域是面板面积的8％至40％。

公开(公告)号：US08633479B2

公开(公告)日：2014-01-21

申请号：US12923434

申请日：2010-09-21

申请人： Jong-Hyun Choi ,  Ji-Yong Noh ,  Jang-Soon Im ,  Dae-Woo Lee

发明人： Jong-Hyun Choi ,  Ji-Yong Noh ,  Jang-Soon Im ,  Dae-Woo Lee

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78606

摘要： A display includes a substrate main body, a thin film transistor (TFT) on the substrate main body, the TFT including an oxide semiconductor layer and a metal oxide film sequentially stacked on top of each other.

摘要翻译： 显示器包括基板主体，在基板主体上的薄膜晶体管（TFT），TFT包括依次层叠在一起的氧化物半导体层和金属氧化物膜。

公开(公告)号：US20130001533A1

公开(公告)日：2013-01-03

申请号：US13473412

申请日：2012-05-16

申请人： Young-Dae Kim ,  Jang-Soon Im ,  Il-Jeong Lee ,  Sang-Bong Lee

发明人： Young-Dae Kim ,  Jang-Soon Im ,  Il-Jeong Lee ,  Sang-Bong Lee

IPC分类号： H01L27/32 ,  H01L51/56

CPC分类号： H01L27/3248

摘要： An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating interlayer and sidewalls of the first to the third contact holes. A pixel defining layer may be disposed on the insulating interlayer, portions of the first electrodes and the sidewalls of the first to the third contact holes. Light emitting structures may be disposed on the first electrodes in pixel regions. A second electrode may be located on the light emitting structures. Planarization patterns may be disposed on the pixel defining layer to fill the first and the second contact holes. A spacer may be disposed on the pixel defining layer to fill the third contact hole.

摘要翻译： 提供了一种有机发光显示装置。 薄膜晶体管可以位于基板上。 具有到第三接触孔的第一接触孔的绝缘中间层可以设置在基板上。 电连接薄膜晶体管的第一电极可以位于第一至第三接触孔的绝缘层和侧壁上。 像素限定层可以设置在绝缘中间层，第一电极的部分和第一至第三接触孔的侧壁上。 发光结构可以设置在像素区域中的第一电极上。 第二电极可以位于发光结构上。 平面化图案可以设置在像素限定层上以填充第一和第二接触孔。 间隔物可以设置在像素限定层上以填充第三接触孔。

公开(公告)号：US20110068337A1

公开(公告)日：2011-03-24

申请号：US12923434

申请日：2010-09-21

申请人： Jong-Hyun Choi ,  Ji-Yong Noh ,  Jang-Soon Im ,  Dae-Woo Lee

发明人： Jong-Hyun Choi ,  Ji-Yong Noh ,  Jang-Soon Im ,  Dae-Woo Lee

IPC分类号： H01L29/12 ,  H01L33/08

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78606

摘要： A display includes a substrate main body, a thin film transistor (TFT) on the substrate main body, the TFT including an oxide semiconductor layer and a metal oxide film sequentially stacked on top of each other.

摘要翻译： 显示器包括基板主体，在基板主体上的薄膜晶体管（TFT），TFT包括依次层叠在一起的氧化物半导体层和金属氧化物膜。

公开(公告)号：US08946687B2

公开(公告)日：2015-02-03

申请号：US13473412

申请日：2012-05-16

申请人： Young-Dae Kim ,  Jang-Soon Im ,  Il-Jeong Lee ,  Sang-Bong Lee

发明人： Young-Dae Kim ,  Jang-Soon Im ,  Il-Jeong Lee ,  Sang-Bong Lee

IPC分类号： H01L29/08 ,  H01L27/32

CPC分类号： H01L27/3248

摘要： An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating interlayer and sidewalls of the first to the third contact holes. A pixel defining layer may be disposed on the insulating interlayer, portions of the first electrodes and the sidewalls of the first to the third contact holes. Light emitting structures may be disposed on the first electrodes in pixel regions. A second electrode may be located on the light emitting structures. Planarization patterns may be disposed on the pixel defining layer to fill the first and the second contact holes. A spacer may be disposed on the pixel defining layer to fill the third contact hole.

摘要翻译： 提供了一种有机发光显示装置。 薄膜晶体管可以位于基板上。 具有到第三接触孔的第一接触孔的绝缘中间层可以设置在基板上。 电连接薄膜晶体管的第一电极可以位于第一至第三接触孔的绝缘层和侧壁上。 像素限定层可以设置在绝缘中间层，第一电极的部分和第一至第三接触孔的侧壁上。 发光结构可以设置在像素区域中的第一电极上。 第二电极可以位于发光结构上。 平面化图案可以设置在像素限定层上以填充第一和第二接触孔。 间隔物可以设置在像素限定层上以填充第三接触孔。

公开(公告)号：US20100155747A1

公开(公告)日：2010-06-24

申请号：US12635964

申请日：2009-12-11

申请人： Tae-Hoon Yang ,  Han-Hee Yoon ,  Kil-Won Lee ,  Jang-Soon Im ,  Ji-Yong Noh

发明人： Tae-Hoon Yang ,  Han-Hee Yoon ,  Kil-Won Lee ,  Jang-Soon Im ,  Ji-Yong Noh

IPC分类号： H01L51/44 ,  H01L51/48

CPC分类号： H01L27/3244 ,  H01L27/1218 ,  H01L27/3258 ,  H01L27/3262

摘要： An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.

摘要翻译： 一种有机发光二极管（OLED）显示装置及其制造方法，其中所述OLED显示装置包括：包括像素区域和非像素区域的衬底;设置在所述衬底上的缓冲层;设置在所述衬底上的半导体层; 缓冲层，并且包括沟道区域和源极/漏极区域，设置成对应于半导体层的沟道区域的栅极电极，将半导体层与栅电极绝缘的栅极绝缘层，电连接到 半导体层的源极/漏极区域以及使栅电极与源极/漏极绝缘的层间绝缘层，其中位于非像素区域上的缓冲层，栅极绝缘层和层间绝缘层的区域 ，并且部分去除区域是面板面积的8％至40％。