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    Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications
    1.
    发明申请
    Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications 审中-公开
    制造用于太阳能电池或绝缘体上硅（SOI）应用的薄膜器件的方法

    公开(公告)号：US20060184266A1

    公开(公告)日：2006-08-17

    申请号：US11392372

    申请日：2006-03-29

    Applicant: Chetan Solanki ,  Renat Bilyalov ,  Jef Poortmans

    Inventor： Chetan Solanki ,  Renat Bilyalov ,  Jef Poortmans

    IPC: G06F19/00

    CPC classification number: H01L31/18 ,  H01L21/76251 ,  H01L21/76259

    Abstract: In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.

    Abstract translation: 在一个创造性方面，薄膜器件是通过（a）在原始衬底上形成薄膜形式的多孔半导体层来制造的，所述形成之后紧随其后（b）通过提升薄膜分离薄膜， 从原始底物脱落; （c）将薄膜转移到虚拟支撑体，薄膜不附着于虚拟支撑体; （d）在薄膜的顶部制造装置; 和（e）将所述装置在所述薄膜上转移和附着在异物基底上。

    Method of producing a semiconductor layer on a substrate
    2.
    发明授权
    Method of producing a semiconductor layer on a substrate 有权
    在基板上制造半导体层的方法

    公开(公告)号：US06602760B2

    公开(公告)日：2003-08-05

    申请号：US10032335

    申请日：2001-12-19

    Applicant: Jef Poortmans ,  Giovanni Flamand ,  Renat Bilyalov

    Inventor： Jef Poortmans ,  Giovanni Flamand ,  Renat Bilyalov

    IPC: H01L2146

    CPC classification number: H01L21/76259

    Abstract: A method of producing a semiconductor layer onto a semiconductor substrate. The method comprises providing a first semiconductor substrate, and providing a second semiconductor substrate. The method also comprises producing a porous layer, which has a porosity profile, on top of the first semiconductor substrate, and producing a porous layer, which has a porosity profile, on top of the second semiconductor substrate. The method further comprises bringing the porous layer of the second substrate into contact with the porous layer of the first substrate, so as to form a bond between the two substrates, performing a thermal annealing step, and lifting off of the second substrate, leaving a layer of the second substrate's semiconductor material attached to the first substrate.

    Abstract translation: 一种在半导体衬底上制造半导体层的方法。 该方法包括提供第一半导体衬底，并提供第二半导体衬底。 该方法还包括在第一半导体衬底的顶部上制造具有孔隙率分布的多孔层，并且在第二半导体衬底的顶部上产生具有孔隙率分布的多孔层。 该方法还包括使第二基板的多孔层与第一基板的多孔层接触，以便在两个基板之间形成接合，执行热退火步骤和提升第二基板，留下一个 第二基板的半导体材料的层与第一基板连接。

    Germanium solar cell and method for the production thereof
    3.
    发明授权
    Germanium solar cell and method for the production thereof 有权
    锗太阳能电池及其制造方法

    公开(公告)号：US07964789B2

    公开(公告)日：2011-06-21

    申请号：US10841803

    申请日：2004-05-06

    Applicant: Niels Posthuma ,  Giovanni Flamand ,  Jef Poortmans

    Inventor： Niels Posthuma ,  Giovanni Flamand ,  Jef Poortmans

    IPC: H01L31/00

    CPC classification number: H01L31/02167 ,  H01L31/02161 ,  H01L31/022425 ,  H01L31/1808 ,  Y02E10/50

    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

    Abstract translation: 公开了一种钝化和接触锗衬底的表面的方法。 在锗表面上形成非晶硅材料的钝化层。 然后在钝化层上形成金属接触层。 该结构被加热使得锗表面与接触层接触。 因此，公开了钝化的锗表面，以及包括这种结构的太阳能电池。

    Germanium solar cell and method for the production thereof
    5.
    发明申请
    Germanium solar cell and method for the production thereof 有权
    锗太阳能电池及其制造方法

    公开(公告)号：US20070227589A1

    公开(公告)日：2007-10-04

    申请号：US11246509

    申请日：2005-10-07

    Applicant: Niels Posthuma ,  Giovanni Flamand ,  Jef Poortmans

    Inventor： Niels Posthuma ,  Giovanni Flamand ,  Jef Poortmans

    IPC: H01L31/00

    CPC classification number: H01L31/1808 ,  H01L31/068 ,  Y02E10/547

    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

    Abstract translation: 公开了一种钝化和接触锗衬底的表面的方法。 在锗表面上形成非晶硅材料的钝化层。 然后在钝化层上形成金属接触层。 该结构被加热使得锗表面与接触层接触。 因此，公开了钝化的锗表面，以及包括这种结构的太阳能电池。

    Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications
    6.
    发明申请
    Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications 有权
    制造用于太阳能电池或绝缘体上硅（SOI）应用的薄膜器件的方法

    公开(公告)号：US20050020032A1

    公开(公告)日：2005-01-27

    申请号：US10627576

    申请日：2003-07-24

    Applicant: Chetan Solanki ,  Renat Bilyalov ,  Jef Poortmans

    Inventor： Chetan Solanki ,  Renat Bilyalov ,  Jef Poortmans

    IPC: H01L21/762 ,  H01L31/18 ,  H01L21/30

    CPC classification number: H01L31/18 ,  H01L21/76251 ,  H01L21/76259

    Abstract: In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.

    Abstract translation: 在一个创造性方面，薄膜器件是通过（a）在原始衬底上形成薄膜形式的多孔半导体层来制造的，所述形成之后紧随其后（b）通过提升薄膜分离薄膜， 从原始底物脱落; （c）将薄膜转移到虚拟支撑体，薄膜不附着于虚拟支撑体; （d）在薄膜的顶部制造装置; 和（e）将所述装置在所述薄膜上转移和附着在异物基底上。

    Photovoltaic device
    10.
    发明授权
    Photovoltaic device 失效
    光伏装置

    公开(公告)号：US07705235B2

    公开(公告)日：2010-04-27

    申请号：US10658114

    申请日：2003-09-08

    Applicant: Renat Bilyalov ,  Alexander Ulyashin ,  Jef Poortmans ,  Wolfgang Fahrner

    Inventor： Renat Bilyalov ,  Alexander Ulyashin ,  Jef Poortmans ,  Wolfgang Fahrner

    IPC: H01L31/00

    CPC classification number: H01L31/0745 ,  H01L31/0284 ,  H01L31/04 ,  H01L31/0747 ,  H01L31/077 ,  Y02E10/50

    Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.

    Abstract translation: 本发明涉及一种光伏器件，该器件包括第一导电类型的第一半导体材料的第一层，与第一层相反的导电类型的第二半导体材料的第二层和第三层的第三层 位于第一层和第二层之间的第三多孔半导体材料。 本发明还提供了一种用于制造光伏器件的方法。

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