公开(公告)号：US20090236737A1

公开(公告)日：2009-09-24

申请号：US12053277

申请日：2008-03-21

申请人： Jeffrey A. Burger ,  Fouad F. Boueri

发明人： Jeffrey A. Burger ,  Fouad F. Boueri

IPC分类号： H01L23/66

CPC分类号： H01L24/49 ,  H01L23/66 ,  H01L24/48 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： An RF/microwave circuit is configured to eliminate the physical constraint that requires a sacrifice of one output series inductor wirebond for each shunt inductor wirebond. The circuit employs a multi-level metalized substrate as part of its output impedance matching network. The lower level of the multi-level substrate serves as an intermediate connection point for the output series inductor wirebonds as it extends from the output terminal of an active device to an output metallization pad. The upper level of the multi-level substrate serves to support a DC block capacitor and as an intermediate connection point for the shunt inductor wirebonds. The multi-level substrate allows the series inductor wirebonds to be positioned at a lower height, and the shunt inductor wirebonds at a greater height. Because they are at different heights, the physical constraint of sacrificing a series wirebond per a shunt inductor wirebond can be eliminated. This leads to improved power efficiency, higher gain, and greater bandwidth.

摘要翻译： RF /微波电路被配置为消除需要牺牲每个并联电感器引线键的一个输出串联电感器引线键的物理约束。 该电路采用多级金属化衬底作为其输出阻抗匹配网络的一部分。 多级衬底的较低电平用作输出串联电感器引线键的中间连接点，当它从有源器件的输出端子延伸到输出金属化焊盘时。 多层基板的上层用于支持DC块电容器和作为并联电感器引线键的中间连接点。 多电平基板允许串联电感器线圈定位在较低的高度，并且分流电感器线圈以更大的高度结合。 因为它们处于不同的高度，所以可以消除牺牲每个并联电感器引线键合的串联引线键的物理约束。 这导致功率效率更高，增益更高，带宽更大。

公开(公告)号：US07795716B2

公开(公告)日：2010-09-14

申请号：US12053277

申请日：2008-03-21

申请人： Jeffrey A. Burger ,  Fouad F. Boueri

发明人： Jeffrey A. Burger ,  Fouad F. Boueri

IPC分类号： H01L23/02

CPC分类号： H01L24/49 ,  H01L23/66 ,  H01L24/48 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： An RF/microwave circuit is configured to eliminate the physical constraint that requires a sacrifice of one output series inductor wirebond for each shunt inductor wirebond. The circuit employs a multi-level metalized substrate as part of its output impedance matching network. The lower level of the multi-level substrate serves as an intermediate connection point for the output series inductor wirebonds as it extends from the output terminal of an active device to an output metallization pad. The upper level of the multi-level substrate serves to support a DC block capacitor and as an intermediate connection point for the shunt inductor wirebonds. The multi-level substrate allows the series inductor wirebonds to be positioned at a lower height, and the shunt inductor wirebonds at a greater height. Because they are at different heights, the physical constraint of sacrificing a series wirebond per a shunt inductor wirebond can be eliminated. This leads to improved power efficiency, higher gain, and greater bandwidth.

摘要翻译： RF /微波电路被配置为消除需要牺牲每个并联电感器引线键的一个输出串联电感器引线键的物理约束。 该电路采用多级金属化衬底作为其输出阻抗匹配网络的一部分。 多级衬底的较低电平用作输出串联电感器引线键的中间连接点，当它从有源器件的输出端子延伸到输出金属化焊盘时。 多层基板的上层用于支持DC块电容器和作为并联电感器引线键的中间连接点。 多电平基板允许串联电感器线圈定位在较低的高度，并且分流电感器线圈以更大的高度结合。 因为它们处于不同的高度，所以可以消除牺牲每个并联电感器引线键合的串联引线键的物理约束。 这导致功率效率更高，增益更高，带宽更大。

公开(公告)号：US06331931B1

公开(公告)日：2001-12-18

申请号：US09677926

申请日：2000-10-03

申请人： John H. Titizian ,  Jeffrey A. Burger ,  Young H. Kim

发明人： John H. Titizian ,  Jeffrey A. Burger ,  Young H. Kim

IPC分类号： H01G4228

CPC分类号： H01L23/642 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L28/40 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： An radio frequency (RF)/microwave power amplification circuit is disclosed herein having improved power and frequency characteristics. The RF power circuit is characterized by having the output capacitance of the device resonate with a shunt inductance that is physically closer to the device than provided in conventional RF power circuits. This is realized by mounting a direct current (DC) bypass capacitor directly on the same metalized pad that the device terminal is mounted on. By doing this, the inductance associated with a wire bond connection from the device to the capacitor is eliminated or at least reduced. Also disclosed is a dual cell power circuit that consists of matching the impedance characteristics of the active cells to each other by adjusting the circuit parameters in which the active devices interact with. In addition, an RF power circuit is disclosed that includes a pair of vertical cells in a parallel relationship formed on a thin semiconductor to cause more current flow through a metal layer rather than the lossy substrate. Furthermore, a novel metal-dielectric-metal chip capacitor is disclosed that is fabricated on a refractory metal substrate, which results in a high quality factor (Q) for the capacitor. The capacitor has contacts to both capacitor plates by way of its top metallization surfaces, and access to one of the plates through the bottom, i.e. the mounting surface of the capacitor. Additionally, a high power device is disclosed that encompasses at least some or all of the techniques described above to achieve an amplification that exhibits both high power and high cutoff frequency characteristics.

摘要翻译： 本文公开了一种具有改进的功率和频率特性的射频（RF）/微波功率放大电路。 RF功率电路的特征在于，器件的输出电容与物理上更接近器件的分流电感谐振，而不是传统的RF功率电路中提供的。 这可以通过将直流（DC）旁路电容器直接安装在安装设备端子的同一金属化焊盘上来实现。 通过这样做，消除了或者至少减少了从器件到电容器的引线键合连接所引起的电感。 还公开了一种双电池电源电路，其包括通过调节有源器件与其相互作用的电路参数来将有源电池的阻抗特性彼此匹配。 此外，公开了一种RF功率电路，其包括在薄半导体上形成的平行关系的一对垂直单元，以使更多的电流流过金属层而不是有损的衬底。 此外，公开了一种新颖的金属介电金属片状电容器，其制造在难熔金属基片上，这导致电容器的高品质因数（Q）。 电容器通过其顶部金属化表面与两个电容器板接触，并通过底部，即电容器的安装表面进入其中一个板。 此外，公开了一种高功率器件，其涵盖上述技术中的至少一些或全部技术以实现具有高功率和高截止频率特性的放大。

公开(公告)号：US06181200B2

公开(公告)日：2001-01-30

申请号：US09289526

申请日：1999-04-09

申请人： John H. Titizian ,  Jeffrey A. Burger ,  Young H. Kim

发明人： John H. Titizian ,  Jeffrey A. Burger ,  Young H. Kim

IPC分类号： H03F100

CPC分类号： H01L23/642 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L28/40 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： An radio frequency (RF)/microwave power amplification circuit is disclosed herein having improved power and frequency characteristics. The RF power circuit is characterized by having the output capacitance of the device resonate with a shunt inductance that is physically closer to the device than provided in conventional RF power circuits. This is realized by mounting a direct current (DC) bypass capacitor directly on the same metalized pad that the device terminal is mounted on. By doing this, the inductance associated with a wire bond connection from the device to the capacitor is eliminated or at least reduced. Also disclosed is a dual cell power circuit that consists of matching the impedance characteristics of the active cells to each other by adjusting the circuit parameters in which the active devices interact with. In addition, an RF power circuit is disclosed that includes a pair of vertical cells in a parallel relationship formed on a thin semiconductor to cause more current flow through a metal layer rather than the lossy substrate. Furthermore, a novel metal-dielectric-metal chip capacitor is disclosed that is fabricated on a refractory metal substrate, which results in a high quality factor (Q) for the capacitor. The capacitor has contacts to both capacitor plates by way of its top metallization surfaces, and access to one of the plates through the bottom, i.e. the mounting surface of the capacitor. Additionally, a high power device is disclosed that encompasses at least some or all of the techniques described above to achieve an amplification that exhibits both high power and high cutoff frequency characteristics.

摘要翻译： 本文公开了一种具有改进的功率和频率特性的射频（RF）/微波功率放大电路。 RF功率电路的特征在于，器件的输出电容与物理上更接近器件的分流电感谐振，而不是传统的RF功率电路中提供的。 这可以通过将直流（DC）旁路电容器直接安装在安装设备端子的同一金属化焊盘上来实现。 通过这样做，消除了或者至少减少了从器件到电容器的引线键合连接所引起的电感。 还公开了一种双电池电源电路，其包括通过调节有源器件与其相互作用的电路参数来将有源电池的阻抗特性彼此匹配。 此外，公开了一种RF功率电路，其包括在薄半导体上形成的平行关系的一对垂直单元，以使更多的电流流过金属层而不是有损的衬底。 此外，公开了一种新颖的金属介电金属片状电容器，其制造在难熔金属基片上，这导致电容器的高品质因数（Q）。 电容器通过其顶部金属化表面与两个电容器板接触，并通过底部，即电容器的安装表面进入其中一个板。 此外，公开了一种高功率器件，其涵盖上述技术中的至少一些或全部技术以实现具有高功率和高截止频率特性的放大。